Overview
The BLF8G10LS-160V,118 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This component is specifically tailored for RF power amplifier applications in the frequency range of 920 MHz to 960 MHz, making it ideal for base station and multicarrier systems. Although this product has been discontinued, its features and specifications remain relevant for understanding its capabilities.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 920 | - | 960 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 160 | - | W |
| G p | power gain | P L(AV) = 35 W; V DS = 30 V | 19 | 19.7 | - | dB |
| RL in | input return loss | P L(AV) = 35 W; V DS = 30 V; I Dq = 1100 mA | -15 | -10 | - | dB |
| η D | drain efficiency | P L(AV) = 35 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA | 27 | 29 | - | % |
| P L(AV) | average output power | - | - | 35 | - | W |
| ACPR | adjacent channel power ratio | P L(AV) = 35 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA | -38 | -34 | - | dBc |
Key Features
- Excellent Ruggedness: The BLF8G10LS-160V,118 is designed to withstand harsh operating conditions.
- High Efficiency: It offers high drain efficiency, typically up to 29%, ensuring efficient power use.
- Low Thermal Resistance: The low thermal resistance (Rth) provides excellent thermal stability.
- Broadband Operation: Designed for broadband operation in the 920 MHz to 960 MHz frequency range.
- Lower Output Capacitance: Improved performance in Doherty applications due to lower output capacitance.
- Low Memory Effects: Excellent pre-distortability due to low memory effects.
- Internally Matched: Internally matched for ease of use.
- Integrated ESD Protection: Built-in ESD protection for enhanced reliability.
- RoHS Compliance: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Ideal for use in base stations requiring high power and efficiency.
- Multicarrier Applications: Suitable for multicarrier applications within the 920 MHz to 960 MHz frequency range.
Q & A
- What is the frequency range of the BLF8G10LS-160V,118?
The frequency range is from 920 MHz to 960 MHz.
- What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 160 W.
- What is the typical power gain of the BLF8G10LS-160V,118?
The typical power gain is 19.7 dB.
- What is the drain efficiency of the BLF8G10LS-160V,118?
The drain efficiency is typically up to 29%.
- What is the average output power of the BLF8G10LS-160V,118?
The average output power is 35 W.
- Is the BLF8G10LS-160V,118 internally matched?
Yes, it is internally matched for ease of use.
- Does the BLF8G10LS-160V,118 have integrated ESD protection?
Yes, it has integrated ESD protection.
- Is the BLF8G10LS-160V,118 RoHS compliant?
Yes, it is compliant with the RoHS Directive 2002/95/EC.
- What are the primary applications of the BLF8G10LS-160V,118?
The primary applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.
- What is the current status of the BLF8G10LS-160V,118?
The product has been discontinued.
