Overview
The BLF6G22-45,112 is a 45 W LDMOS power transistor designed by Ampleon USA Inc. for use in RF power amplifiers, particularly in base station applications. This transistor operates within the frequency range of 2000 MHz to 2200 MHz, making it suitable for W-CDMA and other multicarrier systems. Although this product has been discontinued and replaced by the BLM7G1822S-40PBG, it remains relevant for existing installations and legacy systems.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| Frequency Range (f range) | - | 2000 | - | 2200 | MHz |
| Nominal Output Power at 3 dB Gain Compression (P L(3dB)) | Test signal: 2-c W-CDMA | - | 45 | - | W |
| Power Gain (G p) | P L(AV) = 2.5 W; V DS = 28 V | 17.3 | 18.5 | 19.7 | dB |
| Drain Efficiency (η D) | P L(AV) = 2.5 W; V DS = 28 V; 2110 MHz < f < 2170 MHz; I Dq = 405 mA | 10.5 | 13 | - | % |
| Average Output Power (P L(AV)) | - | - | 2.5 | - | W |
| Adjacent Channel Power Ratio (ACPR) | P L(AV) = 2.5 W; V DS = 28 V; 2110 MHz < f < 2170 MHz; I Dq = 405 mA | -49 | -45 | - | dBc |
| Voltage - Rated (V DS) | - | - | 65 | - | V |
| Current Rating - Test (I Dq) | - | - | 405 | - | mA |
| Package / Case | - | - | SOT-608A | - | - |
Key Features
- Easy Power Control: The transistor is designed for easy power control, making it versatile in various RF power amplifier applications.
- Integrated ESD Protection: It includes integrated ESD protection, enhancing the device's robustness against electrostatic discharge.
- Excellent Ruggedness: The BLF6G22-45,112 is known for its excellent ruggedness, ensuring reliable performance under demanding conditions.
- High Efficiency: The transistor offers high efficiency, which is crucial for minimizing power consumption and heat generation in base station applications.
- Excellent Thermal Stability: It provides excellent thermal stability, which is essential for maintaining consistent performance over a range of temperatures.
- Broadband Operation: Designed for broadband operation within the 2000 MHz to 2200 MHz frequency range, making it suitable for various wireless communication systems.
- Internally Matched: The device is internally matched, simplifying the design and implementation process for engineers.
- Compliance with RoHS Directive: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances, ensuring environmental safety.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: The BLF6G22-45,112 is specifically designed for use in RF power amplifiers in W-CDMA base stations.
- Multicarrier Applications: It is suitable for multicarrier applications within the 2000 MHz to 2200 MHz frequency range, making it versatile for various wireless communication systems.
Q & A
- What is the frequency range of the BLF6G22-45,112 transistor?
The BLF6G22-45,112 operates within the frequency range of 2000 MHz to 2200 MHz.
- What is the nominal output power of the BLF6G22-45,112 at 3 dB gain compression?
The nominal output power is 45 W.
- What is the typical power gain of the BLF6G22-45,112?
The typical power gain is 18.5 dB.
- What is the drain efficiency of the BLF6G22-45,112?
The drain efficiency is typically 13%.
- What is the average output power of the BLF6G22-45,112?
The average output power is 2.5 W.
- What is the adjacent channel power ratio (ACPR) of the BLF6G22-45,112?
The ACPR is typically -45 dBc.
- What is the rated voltage of the BLF6G22-45,112?
The rated voltage is 65 V.
- What is the test current rating of the BLF6G22-45,112?
The test current rating is 405 mA.
- In what package is the BLF6G22-45,112 available?
The transistor is available in the SOT-608A package.
- Is the BLF6G22-45,112 still in production?
No, the BLF6G22-45,112 has been discontinued and replaced by the BLM7G1822S-40PBG.
