BLF861A,112
  • Share:

Ampleon USA Inc. BLF861A,112

Manufacturer No:
BLF861A,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 14.5DB SOT540A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF861A,112 is a high-performance RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This component is designed for use in UHF broadcast applications, particularly in the frequency range of 470-860 MHz. It is known for its high power gain, ease of power control, and excellent ruggedness, making it suitable for demanding broadcast environments.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Part NumberBLF861A,112
Transistor TypeLDMOS (Dual), Common Source
Voltage - Rated65V
Gain14.5 dB
Frequency Range470-860 MHz
Package / CaseSOT540A

Key Features

  • High power gain, ensuring efficient amplification in UHF broadcast applications.
  • Easy power control, facilitating simple and reliable operation.
  • Excellent ruggedness, designed to withstand abrupt load mismatch errors.
  • Source on underside, enhancing thermal management and stability.

Applications

The BLF861A,112 is primarily used in UHF broadcast systems, including television and radio broadcasting. Its high power and rugged design make it suitable for high-power amplifiers and transmitters in these applications.

Q & A

  1. What is the primary application of the BLF861A,112?
    The BLF861A,112 is primarily used in UHF broadcast systems, including television and radio broadcasting.
  2. What is the frequency range of the BLF861A,112?
    The frequency range of the BLF861A,112 is 470-860 MHz.
  3. What is the rated voltage of the BLF861A,112?
    The rated voltage of the BLF861A,112 is 65V.
  4. What type of transistor is the BLF861A,112?
    The BLF861A,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  5. What is the gain of the BLF861A,112?
    The gain of the BLF861A,112 is 14.5 dB.
  6. What package type does the BLF861A,112 use?
    The BLF861A,112 uses the SOT540A package.
  7. Is the BLF861A,112 designed to handle load mismatch errors?
    Yes, the BLF861A,112 is designed to withstand abrupt load mismatch errors.
  8. What are the key features of the BLF861A,112?
    The key features include high power gain, easy power control, excellent ruggedness, and a source on the underside for improved thermal management.
  9. Who manufactures the BLF861A,112?
    The BLF861A,112 is manufactured by Ampleon USA Inc.
  10. Where can I find more detailed specifications for the BLF861A,112?
    You can find detailed specifications on the official Ampleon website or through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:14.5dB
Voltage - Test:32 V
Current Rating (Amps):18A
Noise Figure:- 
Current - Test:1 A
Power - Output:150W
Voltage - Rated:65 V
Package / Case:SOT-540A
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

-
183

Please send RFQ , we will respond immediately.

Related Product By Categories

MRFE6S9060NR1
MRFE6S9060NR1
NXP USA Inc.
FET RF 66V 880MHZ TO270-2
BLF7G24LS-140,118
BLF7G24LS-140,118
NXP USA Inc.
N-CHANNEL, MOSFET
MRFE6VP8600HR5
MRFE6VP8600HR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI-1230
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
MMBFJ310LT1G
MMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
PD54003L-E
PD54003L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT
BLF7G10LS-250
BLF7G10LS-250
Ampleon USA Inc.
RF FET LDMOS 250W SOT502B
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R

Related Product By Brand

BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-100,112
CLF1G0035-100,112
Ampleon USA Inc.
RF MOSFET HEMT 50V SOT467C
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B