BLF888BS,112
  • Share:

Ampleon USA Inc. BLF888BS,112

Manufacturer No:
BLF888BS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF MOSFET LDMOS DL 50V SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888BS,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor is designed for use in the UHF broadcast frequency range, specifically between 470 MHz and 860 MHz. It is optimized for DVB-T (Digital Video Broadcasting - Terrestrial) broadcast applications, particularly in Doherty amplifier configurations, where it delivers extremely high power and efficiency.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Part NumberBLF888BS,112
Transistor TypeLDMOS (Dual), Common Source
Frequency Range470 MHz ~ 860 MHz
Power Output650 W
Gain20 dB
Voltage - Rated50 V
Current Rating - Test1.3 A
Package / CaseSOT-539B

Key Features

  • High power output of 650 W, making it suitable for high-power broadcast applications.
  • Operates in the UHF frequency range of 470 MHz to 860 MHz.
  • High gain of 20 dB, enhancing signal strength and quality.
  • LDMOS technology for high efficiency and reliability.
  • Optimized for use in Doherty amplifier configurations to achieve high power and efficiency.

Applications

The BLF888BS,112 is primarily used in UHF broadcast systems, particularly for DVB-T broadcast applications. It is well-suited for high-power amplifiers in broadcasting equipment, such as TV transmitters and other communication systems requiring high power and efficiency in the UHF frequency range.

Q & A

  1. What is the frequency range of the BLF888BS,112?
    The BLF888BS,112 operates in the frequency range of 470 MHz to 860 MHz.
  2. What is the power output of the BLF888BS,112?
    The power output is 650 W.
  3. What type of transistor is the BLF888BS,112?
    The BLF888BS,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  4. What is the gain of the BLF888BS,112?
    The gain is 20 dB.
  5. What is the rated voltage of the BLF888BS,112?
    The rated voltage is 50 V.
  6. What is the current rating of the BLF888BS,112?
    The current rating is 1.3 A.
  7. In what package is the BLF888BS,112 available?
    The BLF888BS,112 is available in the SOT-539B package.
  8. What are the primary applications of the BLF888BS,112?
    The primary applications include UHF broadcast systems, particularly for DVB-T broadcast.
  9. Why is the BLF888BS,112 optimized for Doherty amplifier configurations?
    It is optimized for Doherty amplifier configurations to achieve high power and efficiency.
  10. Who is the manufacturer of the BLF888BS,112?
    The manufacturer is Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:470MHz ~ 860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):2.8µA
Noise Figure:- 
Current - Test:- 
Power - Output:250W
Voltage - Rated:104 V
Package / Case:SOT539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$242.72
2

Please send RFQ , we will respond immediately.

Same Series
BLF888B,112
BLF888B,112
RF FET LDMOS 104V 21DB SOT539A

Similar Products

Part Number BLF888BS,112 BLF888AS,112 BLF888B,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Not For New Designs Active Not For New Designs
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 470MHz ~ 860MHz 860MHz 860MHz
Gain 21dB 21dB 21dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) 2.8µA - -
Noise Figure - - -
Current - Test - 1.3 A 1.3 A
Power - Output 250W 250W 250W
Voltage - Rated 104 V 110 V 104 V
Package / Case SOT539B SOT-539B SOT-539A
Supplier Device Package SOT539B SOT539B SOT539A

Related Product By Categories

MRFE6S9060NR1
MRFE6S9060NR1
NXP USA Inc.
FET RF 66V 880MHZ TO270-2
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
MW7IC2020NT1
MW7IC2020NT1
NXP USA Inc.
RF MOSFET LDMOS 28V 24PQFN
A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
MRFE6VP8600HR5
MRFE6VP8600HR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI-1230
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
AFT05MS004NT1
AFT05MS004NT1
NXP USA Inc.
FET RF 30V 520MHZ PLD
PD55003S-E
PD55003S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
PD55015S-E
PD55015S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A

Related Product By Brand

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G27LS-100,112
BLF7G27LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF888ESU
BLF888ESU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B