BLF888BS,112
  • Share:

Ampleon USA Inc. BLF888BS,112

Manufacturer No:
BLF888BS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF MOSFET LDMOS DL 50V SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888BS,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor is designed for use in the UHF broadcast frequency range, specifically between 470 MHz and 860 MHz. It is optimized for DVB-T (Digital Video Broadcasting - Terrestrial) broadcast applications, particularly in Doherty amplifier configurations, where it delivers extremely high power and efficiency.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Part NumberBLF888BS,112
Transistor TypeLDMOS (Dual), Common Source
Frequency Range470 MHz ~ 860 MHz
Power Output650 W
Gain20 dB
Voltage - Rated50 V
Current Rating - Test1.3 A
Package / CaseSOT-539B

Key Features

  • High power output of 650 W, making it suitable for high-power broadcast applications.
  • Operates in the UHF frequency range of 470 MHz to 860 MHz.
  • High gain of 20 dB, enhancing signal strength and quality.
  • LDMOS technology for high efficiency and reliability.
  • Optimized for use in Doherty amplifier configurations to achieve high power and efficiency.

Applications

The BLF888BS,112 is primarily used in UHF broadcast systems, particularly for DVB-T broadcast applications. It is well-suited for high-power amplifiers in broadcasting equipment, such as TV transmitters and other communication systems requiring high power and efficiency in the UHF frequency range.

Q & A

  1. What is the frequency range of the BLF888BS,112?
    The BLF888BS,112 operates in the frequency range of 470 MHz to 860 MHz.
  2. What is the power output of the BLF888BS,112?
    The power output is 650 W.
  3. What type of transistor is the BLF888BS,112?
    The BLF888BS,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  4. What is the gain of the BLF888BS,112?
    The gain is 20 dB.
  5. What is the rated voltage of the BLF888BS,112?
    The rated voltage is 50 V.
  6. What is the current rating of the BLF888BS,112?
    The current rating is 1.3 A.
  7. In what package is the BLF888BS,112 available?
    The BLF888BS,112 is available in the SOT-539B package.
  8. What are the primary applications of the BLF888BS,112?
    The primary applications include UHF broadcast systems, particularly for DVB-T broadcast.
  9. Why is the BLF888BS,112 optimized for Doherty amplifier configurations?
    It is optimized for Doherty amplifier configurations to achieve high power and efficiency.
  10. Who is the manufacturer of the BLF888BS,112?
    The manufacturer is Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:470MHz ~ 860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):2.8µA
Noise Figure:- 
Current - Test:- 
Power - Output:250W
Voltage - Rated:104 V
Package / Case:SOT539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$242.72
2

Please send RFQ , we will respond immediately.

Same Series
BLF888B,112
BLF888B,112
RF FET LDMOS 104V 21DB SOT539A

Similar Products

Part Number BLF888BS,112 BLF888AS,112 BLF888B,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Not For New Designs Active Not For New Designs
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 470MHz ~ 860MHz 860MHz 860MHz
Gain 21dB 21dB 21dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) 2.8µA - -
Noise Figure - - -
Current - Test - 1.3 A 1.3 A
Power - Output 250W 250W 250W
Voltage - Rated 104 V 110 V 104 V
Package / Case SOT539B SOT-539B SOT-539A
Supplier Device Package SOT539B SOT539B SOT539A

Related Product By Categories

MRFE6S9060NR1
MRFE6S9060NR1
NXP USA Inc.
FET RF 66V 880MHZ TO270-2
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLF6G21-10G,135
BLF6G21-10G,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
PD55003STR-E
PD55003STR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF278/01,112
BLF278/01,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
LET9045C
LET9045C
STMicroelectronics
MOSFET N-CH 80V 9A M-250
MMBF4416
MMBF4416
onsemi
RF MOSFET N-CH JFET 15V SOT23-3
A2T21H410-24SR6
A2T21H410-24SR6
NXP USA Inc.
IC TRANS RF LDMOS
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF7G22LS-200,112
BLF7G22LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B