Overview
The BLF7G15LS-300P,112 is a 300 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This transistor is specifically tailored for base station applications, operating within the frequency range of 1450 MHz to 1550 MHz. Despite being discontinued, it remains a significant component in the realm of RF power amplifiers.
Key Specifications
Symbol | Parameter | Conditions | Min | Max | Unit | |
---|---|---|---|---|---|---|
f range | frequency range | 1450 | 1550 | MHz | ||
P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 300 | W | ||
G p | power gain | P L(AV) = 85 W; V DS = 28 V; I Dq = 2600 mA | 17 | 18 | dB | |
RL in | input return loss | P L(AV) = 85 W; V DS = 28 V; I Dq = 2600 mA | -7 | -6 | dB | |
η D | drain efficiency | P L(AV) = 85 W; V DS = 28 V; 1476 MHz < f < 1511 MHz; I Dq = 2600 mA | 28 | 31 | % | |
P L(AV) | average output power | 85 | W | |||
ACPR | adjacent channel power ratio | P L(AV) = 85 W; V DS = 28 V; 1476 MHz < f < 1511 MHz; I Dq = 2600 mA | -32 | -28 | dBc |
Key Features
- Designed for low memory effects, providing excellent pre-distortability.
- Low Rth, providing excellent thermal stability.
- High efficiency.
- Internally matched for ease of use.
- Integrated ESD protection.
- Designed for broadband operation (1450 MHz to 1550 MHz).
- Lower output capacitance for improved performance in Doherty applications.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.
Applications
- RF power amplifiers for W-CDMA base stations.
- Multi-carrier applications.
Q & A
- What is the frequency range of the BLF7G15LS-300P transistor?
The frequency range is from 1450 MHz to 1550 MHz.
- What is the nominal output power at 3 dB gain compression for the BLF7G15LS-300P?
The nominal output power at 3 dB gain compression is 300 W.
- What are the key features of the BLF7G15LS-300P transistor?
Key features include low memory effects, low Rth, high efficiency, internal matching, integrated ESD protection, and compliance with RoHS directives.
- What are the typical applications of the BLF7G15LS-300P transistor?
Typical applications include RF power amplifiers for W-CDMA base stations and multi-carrier applications.
- Is the BLF7G15LS-300P transistor still available for purchase?
No, the BLF7G15LS-300P transistor has been discontinued.
- What is the package type of the BLF7G15LS-300P transistor?
The package type is SOT539B.
- What is the drain efficiency of the BLF7G15LS-300P transistor?
The drain efficiency is between 28% and 31% under specified conditions.
- Does the BLF7G15LS-300P transistor have integrated ESD protection?
- What is the average output power of the BLF7G15LS-300P transistor?
The average output power is 85 W.
- Is the BLF7G15LS-300P compliant with RoHS directives?