BLF7G15LS-300P,112
  • Share:

Ampleon USA Inc. BLF7G15LS-300P,112

Manufacturer No:
BLF7G15LS-300P,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G15LS-300P,112 is a 300 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This transistor is specifically tailored for base station applications, operating within the frequency range of 1450 MHz to 1550 MHz. Despite being discontinued, it remains a significant component in the realm of RF power amplifiers.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range 1450 1550 MHz
P L(3dB) nominal output power at 3 dB gain compression Test signal: 2-c W-CDMA 300 W
G p power gain P L(AV) = 85 W; V DS = 28 V; I Dq = 2600 mA 17 18 dB
RL in input return loss P L(AV) = 85 W; V DS = 28 V; I Dq = 2600 mA -7 -6 dB
η D drain efficiency P L(AV) = 85 W; V DS = 28 V; 1476 MHz < f < 1511 MHz; I Dq = 2600 mA 28 31 %
P L(AV) average output power 85 W
ACPR adjacent channel power ratio P L(AV) = 85 W; V DS = 28 V; 1476 MHz < f < 1511 MHz; I Dq = 2600 mA -32 -28 dBc

Key Features

  • Designed for low memory effects, providing excellent pre-distortability.
  • Low Rth, providing excellent thermal stability.
  • High efficiency.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Designed for broadband operation (1450 MHz to 1550 MHz).
  • Lower output capacitance for improved performance in Doherty applications.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.

Applications

  • RF power amplifiers for W-CDMA base stations.
  • Multi-carrier applications.

Q & A

  1. What is the frequency range of the BLF7G15LS-300P transistor?

    The frequency range is from 1450 MHz to 1550 MHz.

  2. What is the nominal output power at 3 dB gain compression for the BLF7G15LS-300P?

    The nominal output power at 3 dB gain compression is 300 W.

  3. What are the key features of the BLF7G15LS-300P transistor?

    Key features include low memory effects, low Rth, high efficiency, internal matching, integrated ESD protection, and compliance with RoHS directives.

  4. What are the typical applications of the BLF7G15LS-300P transistor?

    Typical applications include RF power amplifiers for W-CDMA base stations and multi-carrier applications.

  5. Is the BLF7G15LS-300P transistor still available for purchase?

    No, the BLF7G15LS-300P transistor has been discontinued.

  6. What is the package type of the BLF7G15LS-300P transistor?

    The package type is SOT539B.

  7. What is the drain efficiency of the BLF7G15LS-300P transistor?

    The drain efficiency is between 28% and 31% under specified conditions.

  8. Does the BLF7G15LS-300P transistor have integrated ESD protection?
  9. What is the average output power of the BLF7G15LS-300P transistor?

    The average output power is 85 W.

  10. Is the BLF7G15LS-300P compliant with RoHS directives?

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.47GHz ~ 1.51GHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):45A
Noise Figure:- 
Current - Test:2.6 A
Power - Output:85W
Voltage - Rated:65 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

-
13

Please send RFQ , we will respond immediately.

Same Series
BLF7G15LS-300P,118
BLF7G15LS-300P,118
RF FET LDMOS 65V 18DB SOT539B

Similar Products

Part Number BLF7G15LS-300P,112 BLF7G15LS-300P,118
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 1.47GHz ~ 1.51GHz 1.47GHz ~ 1.51GHz
Gain 18dB 18dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 45A 45A
Noise Figure - -
Current - Test 2.6 A 2.6 A
Power - Output 85W 85W
Voltage - Rated 65 V 65 V
Package / Case SOT-539B SOT-539B
Supplier Device Package SOT539B SOT539B

Related Product By Categories

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
MMRF5014HR5
MMRF5014HR5
NXP USA Inc.
FET RF 125V 2.5GHZ NI360
2SK3557-7-TB-E
2SK3557-7-TB-E
onsemi
RF MOSFET N-CH JFET 5V 3CP
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
MMBFJ310LT1G
MMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
MRFE6VP5150NR1
MRFE6VP5150NR1
NXP USA Inc.
RF MOSFET LDMOS DL 50V TO270
BLF888ESU
BLF888ESU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF178XRS,112
BLF178XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 28DB SOT539B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B