Overview
The NE5550779A-T1-A is a high-performance RF power N-channel LDMOS (Laterally Diffused Metal Oxide Semiconductor) FET produced by Renesas Electronics America Inc. This device is designed for high-power RF applications, particularly in the frequency bands of 150 MHz, 460 MHz, and 900 MHz. It is known for its high output power and efficiency, making it suitable for various radio systems and other RF power amplification needs.
Key Specifications
| Category | Value |
|---|---|
| Family | RF FETs |
| Transistor Type | LDMOS |
| Frequency | 900 MHz |
| Gain | 22 dB |
| Current - Test | 140 mA |
| Current Rating | 2.1 A |
| Power - Output | 38.5 dBm |
| Voltage - Rated | 30 V |
| Voltage - Test | 7.5 V |
| Package / Case | 4-SMD, Flat Leads |
| Packaging | Tape & Reel (TR) |
Key Features
- High output power: Pout = 38.5 dBm typical at VDS = 7.5 V, IDset = 140 mA, and f = 460 MHz.
- High power added efficiency: ηadd = 66% typical.
- High gain: 22 dB.
- Operates in multiple frequency bands: 150 MHz, 460 MHz, and 900 MHz.
- Rugged LDMOS technology for reliable operation.
- Compact 4-SMD package with flat leads.
Applications
The NE5550779A-T1-A is primarily used in high-power RF applications, including:
- 150 MHz, 460 MHz, and 900 MHz band radio systems.
- RF power amplifiers for various communication systems.
- Base station equipment and other high-power RF amplification needs.
Q & A
- What is the NE5550779A-T1-A? The NE5550779A-T1-A is a high-performance RF power N-channel LDMOS FET produced by Renesas Electronics America Inc.
- What are the key frequency bands it operates in? It operates in the 150 MHz, 460 MHz, and 900 MHz frequency bands.
- What is the typical output power of the NE5550779A-T1-A? The typical output power is 38.5 dBm at VDS = 7.5 V, IDset = 140 mA, and f = 460 MHz.
- What is the power added efficiency of the NE5550779A-T1-A? The power added efficiency is typically 66%.
- What is the gain of the NE5550779A-T1-A? The gain is 22 dB.
- What is the rated voltage of the NE5550779A-T1-A? The rated voltage is 30 V.
- What is the current rating of the NE5550779A-T1-A? The current rating is 2.1 A.
- What type of packaging does the NE5550779A-T1-A use? It uses a 4-SMD package with flat leads and is available in Tape & Reel (TR) packaging.
- What are some common applications of the NE5550779A-T1-A? Common applications include 150 MHz, 460 MHz, and 900 MHz band radio systems and RF power amplifiers for communication systems.
- Is the NE5550779A-T1-A RoHS compliant? Yes, the NE5550779A-T1-A is RoHS compliant.
