Overview
The NE5550979A-T1A-A is a high-performance Silicon Power LDMOS FET manufactured by Renesas Electronics America Inc. This device is designed for high-power RF applications, offering exceptional output power and efficiency. It is particularly suited for use in base stations, broadcast equipment, and other high-power RF systems.
Key Specifications
| Parameter | Value |
|---|---|
| Output Power (Pout) | 39.5 dBm (Typical, VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) |
| Power Added Efficiency (PAE) | 66% (Typical) |
| Gain | 22 dB |
| Drain-Source Voltage (VDS) | 7.5 V |
| Drain Current (IDset) | 200 mA |
| Frequency (f) | 460 MHz |
| Input Power (Pin) | 25 dBm |
Key Features
- High Output Power: The NE5550979A-T1A-A delivers a high output power of 39.5 dBm, making it suitable for high-power RF applications.
- High Power Added Efficiency: With a power added efficiency of 66%, this device ensures efficient operation and minimizes heat generation.
- High Gain: The device offers a gain of 22 dB, enhancing signal strength and quality.
- Robust Design: The Silicon Power LDMOS FET is designed to handle high-power conditions, ensuring reliability and durability.
Applications
The NE5550979A-T1A-A is ideal for various high-power RF applications, including:
- Base Stations: For cellular and wireless communication systems.
- Broadcast Equipment: For radio and television broadcasting.
- RF Amplifiers: In industrial, medical, and military equipment.
Q & A
- What is the typical output power of the NE5550979A-T1A-A?
The typical output power is 39.5 dBm. - What is the power added efficiency of this device?
The power added efficiency is 66% typical. - What is the gain of the NE5550979A-T1A-A?
The gain is 22 dB. - What is the recommended drain-source voltage (VDS) for this device?
The recommended VDS is 7.5 V. - What is the typical drain current (IDset) for this device?
The typical IDset is 200 mA. - At what frequency does the NE5550979A-T1A-A operate?
The device operates at a frequency of 460 MHz. - What is the input power (Pin) for the specified output conditions?
The input power is 25 dBm. - What type of transistor is the NE5550979A-T1A-A?
The NE5550979A-T1A-A is a Silicon Power LDMOS FET. - Who manufactures the NE5550979A-T1A-A?
The device is manufactured by Renesas Electronics America Inc. - What are some common applications for this device?
Common applications include base stations, broadcast equipment, and RF amplifiers in various industries.
