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BUK762R6-60E,118
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Nexperia USA Inc. BUK762R6-60E,118

Manufacturer No:
BUK762R6-60E,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK762R6-60E,118 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is designed for high-power applications requiring low on-resistance and high current handling. The MOSFET is packaged in a D2PAK (SOT404) surface mount format, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 60 V
ID (Continuous Drain Current) 120 A
Ptot (Total Power Dissipation) 324 W
RDS(on) (On-Resistance) 2.6 mΩ @ 25 A, 10 V
VGS(th) (Threshold Voltage) 4 V @ 1 mA
Package D2PAK (SOT404)

Key Features

  • Low on-resistance (RDS(on)) of 2.6 mΩ @ 25 A, 10 V, ensuring minimal power loss.
  • High continuous drain current (ID) of 120 A, suitable for high-power applications.
  • High total power dissipation (Ptot) of 324 W, enabling the device to handle demanding thermal conditions.
  • Threshold voltage (VGS(th)) of 4 V @ 1 mA, providing a stable switching threshold.
  • D2PAK (SOT404) surface mount package for easy integration into various designs.

Applications

  • Power management systems, including DC-DC converters and power supplies.
  • Motor control and drive systems.
  • High-power switching applications, such as in industrial and automotive systems.
  • Battery management systems (BMS) and electric vehicle (EV) charging infrastructure.

Q & A

  1. What is the maximum drain-source voltage of the BUK762R6-60E,118 MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current (ID) is 120 A.

  3. What is the on-resistance of the BUK762R6-60E,118?

    The on-resistance (RDS(on)) is 2.6 mΩ @ 25 A, 10 V.

  4. What is the total power dissipation of this MOSFET?

    The total power dissipation (Ptot) is 324 W.

  5. What is the package type of the BUK762R6-60E,118?

    The package type is D2PAK (SOT404).

  6. What are some common applications for this MOSFET?

    Common applications include power management systems, motor control, high-power switching, and battery management systems.

  7. Is the BUK762R6-60E,118 RoHS compliant?

    Yes, the BUK762R6-60E,118 is RoHS compliant.

  8. What is the threshold voltage of this MOSFET?

    The threshold voltage (VGS(th)) is 4 V @ 1 mA.

  9. Where can I find detailed specifications and datasheets for the BUK762R6-60E,118?

    Detailed specifications and datasheets can be found on the official Nexperia website, as well as on distributor websites such as Digi-Key, Mouser, and LCSC.

  10. How do I ensure proper thermal management for this MOSFET in my design?

    Proper thermal management involves using a suitable heatsink, ensuring good thermal interface material, and designing the PCB to optimize heat dissipation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10170 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):324W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK762R6-60E,118 BUK762R4-60E,118 BUK762R6-40E,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V 2.4mOhm @ 25A, 10V 2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 158 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10170 pF @ 25 V 11180 pF @ 25 V 7130 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 324W (Tc) 357W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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