English
BUK762R4-60E,118
  • Share:

Nexperia USA Inc. BUK762R4-60E,118

Manufacturer No:
BUK762R4-60E,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK762R4-60E,118 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a SOT404 (D2PAK) package. It is designed and qualified to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current at Tc)120 A
Ptot (Total Power Dissipation at Tc)357 W
RDS(on) (Drain-Source On-State Resistance)Typically 1.4 mΩ at VGS = 10 V, ID = 60 A
VGS(th) (Gate-Source Threshold Voltage)Typically 2.5 V
PackageSOT404 (D2PAK)
Qualification StandardAEC-Q101

Key Features

  • High current capability of up to 120 A.
  • Low on-state resistance (RDS(on)) of typically 1.4 mΩ.
  • High power dissipation of up to 357 W.
  • TrenchMOS technology for improved performance and efficiency.
  • AEC-Q101 qualified for automotive applications.
  • SOT404 (D2PAK) package for surface mount applications.

Applications

The BUK762R4-60E,118 is suitable for a variety of applications, including:

  • Automotive systems (e.g., power steering, electric vehicles).
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK762R4-60E,118?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current rating at Tc?
    The continuous drain current (ID) at Tc is 120 A.
  3. What is the total power dissipation at Tc?
    The total power dissipation (Ptot) at Tc is 357 W.
  4. What is the typical on-state resistance (RDS(on))?
    The typical on-state resistance (RDS(on)) is 1.4 mΩ at VGS = 10 V, ID = 60 A.
  5. What is the gate-source threshold voltage (VGS(th))?
    The gate-source threshold voltage (VGS(th)) is typically 2.5 V.
  6. In what package is the BUK762R4-60E,118 available?
    The BUK762R4-60E,118 is available in a SOT404 (D2PAK) package.
  7. Is the BUK762R4-60E,118 qualified for automotive use?
    Yes, it is qualified to the AEC-Q101 standard for automotive applications.
  8. What technology is used in the BUK762R4-60E,118?
    The BUK762R4-60E,118 uses TrenchMOS technology.
  9. What are some common applications for the BUK762R4-60E,118?
    Common applications include automotive systems, power supplies, motor control, and high-power switching.
  10. Where can I find detailed specifications and datasheets for the BUK762R4-60E,118?
    Detailed specifications and datasheets can be found on the Nexperia website, Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:158 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.97
471

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK762R4-60E,118 BUK764R4-60E,118 BUK762R6-60E,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V 4.5mOhm @ 25A, 10V 2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V 82 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11180 pF @ 25 V 6230 pF @ 25 V 10170 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 357W (Tc) 234W (Tc) 324W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
BC846A-QVL
BC846A-QVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74HCT273D-Q100J
74HCT273D-Q100J
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SO
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12