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BUK762R4-60E,118
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Nexperia USA Inc. BUK762R4-60E,118

Manufacturer No:
BUK762R4-60E,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK762R4-60E,118 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a SOT404 (D2PAK) package. It is designed and qualified to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current at Tc)120 A
Ptot (Total Power Dissipation at Tc)357 W
RDS(on) (Drain-Source On-State Resistance)Typically 1.4 mΩ at VGS = 10 V, ID = 60 A
VGS(th) (Gate-Source Threshold Voltage)Typically 2.5 V
PackageSOT404 (D2PAK)
Qualification StandardAEC-Q101

Key Features

  • High current capability of up to 120 A.
  • Low on-state resistance (RDS(on)) of typically 1.4 mΩ.
  • High power dissipation of up to 357 W.
  • TrenchMOS technology for improved performance and efficiency.
  • AEC-Q101 qualified for automotive applications.
  • SOT404 (D2PAK) package for surface mount applications.

Applications

The BUK762R4-60E,118 is suitable for a variety of applications, including:

  • Automotive systems (e.g., power steering, electric vehicles).
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK762R4-60E,118?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current rating at Tc?
    The continuous drain current (ID) at Tc is 120 A.
  3. What is the total power dissipation at Tc?
    The total power dissipation (Ptot) at Tc is 357 W.
  4. What is the typical on-state resistance (RDS(on))?
    The typical on-state resistance (RDS(on)) is 1.4 mΩ at VGS = 10 V, ID = 60 A.
  5. What is the gate-source threshold voltage (VGS(th))?
    The gate-source threshold voltage (VGS(th)) is typically 2.5 V.
  6. In what package is the BUK762R4-60E,118 available?
    The BUK762R4-60E,118 is available in a SOT404 (D2PAK) package.
  7. Is the BUK762R4-60E,118 qualified for automotive use?
    Yes, it is qualified to the AEC-Q101 standard for automotive applications.
  8. What technology is used in the BUK762R4-60E,118?
    The BUK762R4-60E,118 uses TrenchMOS technology.
  9. What are some common applications for the BUK762R4-60E,118?
    Common applications include automotive systems, power supplies, motor control, and high-power switching.
  10. Where can I find detailed specifications and datasheets for the BUK762R4-60E,118?
    Detailed specifications and datasheets can be found on the Nexperia website, Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:158 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK762R4-60E,118 BUK764R4-60E,118 BUK762R6-60E,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V 4.5mOhm @ 25A, 10V 2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V 82 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11180 pF @ 25 V 6230 pF @ 25 V 10170 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 357W (Tc) 234W (Tc) 324W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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