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BUK762R6-40E,118
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NXP Semiconductors BUK762R6-40E,118

Manufacturer No:
BUK762R6-40E,118
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NOW NEXPERIA BUK762R6-40E 100A,
Delivery:
Payment:
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Product Introduction

Overview

The BUK762R6-40E,118 is an N-channel TrenchMOS standard level Field-Effect Transistor (FET) produced by Nexperia, a company that was previously part of NXP Semiconductors. This MOSFET is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. It features TrenchMOS technology and is packaged in a D2PAK (SOT404) package.

Key Specifications

Parameter Value
Type Number BUK762R6-40E
Package D2PAK (SOT404)
Channel Type N-channel
Maximum Drain-Source Voltage (VDS) 40 V
Maximum Continuous Drain Current (ID) 100 A
On-Resistance (RDS(on)) @ VGS = 10 V 2.6 mΩ
Maximum Junction Temperature (Tj) 175 °C
Gate-Source Threshold Voltage (VGS(th)) > 1 V at 175 °C
Typical Turn-On Delay Time 29 ns
Typical Turn-Off Delay Time 62 ns
Typical Rise Time 36 ns
Typical Fall Time 36 ns
Automotive Qualified Yes (AEC-Q101 compliant)

Key Features

  • AEC-Q101 compliant, ensuring high reliability in automotive applications.
  • Repetitive avalanche rated, enhancing ruggedness and durability.
  • Suitable for thermally demanding environments with a maximum junction temperature of 175 °C.
  • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C.

Applications

  • 12 V Automotive systems.
  • Motors, lamps, and solenoid control.
  • Start-Stop micro-hybrid applications.
  • Transmission control.
  • Ultra high performance power switching.

Q & A

  1. What is the maximum drain-source voltage of the BUK762R6-40E?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the maximum continuous drain current of the BUK762R6-40E?

    The maximum continuous drain current (ID) is 100 A.

  3. What is the on-resistance of the BUK762R6-40E at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 2.6 mΩ.

  4. What is the maximum junction temperature of the BUK762R6-40E?

    The maximum junction temperature (Tj) is 175 °C.

  5. Is the BUK762R6-40E automotive qualified?

    Yes, it is AEC-Q101 compliant.

  6. What package type is the BUK762R6-40E available in?

    The BUK762R6-40E is available in a D2PAK (SOT404) package.

  7. What are the typical turn-on and turn-off delay times of the BUK762R6-40E?

    The typical turn-on delay time is 29 ns, and the typical turn-off delay time is 62 ns.

  8. What are the typical rise and fall times of the BUK762R6-40E?

    The typical rise time and fall time are both 36 ns.

  9. Is the BUK762R6-40E repetitive avalanche rated?

    Yes, it is repetitive avalanche rated.

  10. What are some common applications of the BUK762R6-40E?

    Common applications include 12 V automotive systems, motors, lamps, and solenoid control, start-stop micro-hybrid applications, transmission control, and ultra high performance power switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK762R6-40E,118 BUK762R6-60E,118 BUK762R9-40E,118 BUK761R6-40E,118 BUK762R0-40E,118
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 120A (Tc) 100A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V 2.6mOhm @ 25A, 10V 2.9mOhm @ 25A, 10V 1.6mOhm @ 25A, 10V 2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 140 nC @ 10 V 79 nC @ 10 V 145 nC @ 10 V 109.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7130 pF @ 25 V 10170 pF @ 25 V 6200 pF @ 25 V 11340 pF @ 25 V 8500 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 263W (Tc) 324W (Tc) 234W (Tc) 349W (Tc) 293W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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