Overview
The BC857BQB-Q is a 45 V, 100 mA PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857xQB-Q series and is packaged in a DFN1110D-3 (SOT8015) package, which is a plastic leadless extremely thin small outline package with side-wettable flanks (SWF). The device is designed for high power dissipation and is suitable for various applications, including automotive and industrial sectors, due to its qualification according to AEC-Q101 standards.
Key Specifications
| Parameter | Min | Max | Unit | |
|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | - | - | -45 | V |
| IC (Collector Current) | - | - | -100 | mA |
| ICM (Peak Collector Current) | - | - | -200 | mA |
| hFE (DC Current Gain) | 220 | - | 475 | - |
| TJ (Junction Temperature) | - | - | 150 | °C |
| fT (Transition Frequency) | - | - | 100 | MHz |
| Ptot (Total Power Dissipation) | - | - | 340 | mW |
Key Features
- High power dissipation capability
- Low package height of 0.5 mm, making it suitable for space-restricted applications
- Qualified according to AEC-Q101 and recommended for use in automotive applications
- General-purpose switching and amplification
- Suitable for Automatic Optical Inspection (AOI) of solder joints
- Smaller footprint compared to traditional packages
Applications
The BC857BQB-Q transistor is versatile and can be used in a variety of applications across different industries, including:
- Automotive: Due to its AEC-Q101 qualification, it is suitable for use in automotive systems.
- Industrial: Ideal for general-purpose switching and amplification in industrial control systems.
- Consumer Electronics: Used in mobile, consumer, and wearable devices where space and power efficiency are crucial.
- Power and Computing: Applies to power management and computing systems requiring reliable and efficient transistor performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC857BQB-Q transistor?
The maximum collector-emitter voltage (VCEO) is -45 V.
- What is the maximum collector current (IC) of the BC857BQB-Q transistor?
The maximum collector current (IC) is -100 mA.
- What is the DC current gain (hFE) range of the BC857BQB-Q transistor?
The DC current gain (hFE) range is from 220 to 475.
- What is the junction temperature (TJ) limit of the BC857BQB-Q transistor?
The junction temperature (TJ) limit is 150 °C.
- What is the transition frequency (fT) of the BC857BQB-Q transistor?
The transition frequency (fT) is 100 MHz.
- Is the BC857BQB-Q transistor qualified for automotive applications?
Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.
- What package type is the BC857BQB-Q transistor available in?
The transistor is available in a DFN1110D-3 (SOT8015) package.
- What are the dimensions of the DFN1110D-3 package?
The dimensions are 1.1 x 1 x 0.48 mm.
- Is the BC857BQB-Q transistor suitable for space-restricted applications?
Yes, due to its low package height and smaller footprint.
- Can the BC857BQB-Q transistor be used for Automatic Optical Inspection (AOI) of solder joints?
Yes, it is suitable for AOI of solder joints.
