Overview
The BC856BWE6327BTSA1 is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC856-BC860 series, known for its high current gain and low collector-emitter saturation voltage, making it suitable for various applications including audio frequency (AF) input stages and driver circuits.
Key Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | IC = 10 µA, IE = 0 | - | - | 50 | V |
| Emitter-Base Voltage | VEBO | IE = 1 µA, IC = 0 | - | - | 5 | V |
| Collector-Emitter Voltage | VCEO | IC = 10 mA, IB = 0 | - | - | 65 | V |
| Collector Current | IC | - | - | 100 | mA | |
| Peak Collector Current | ICM | tp ≤ 10 ms | - | - | 200 | mA |
| DC Current Gain | hFE | IC = 2 mA, VCE = 5 V | 125 | - | 475 | - |
| Collector-Emitter Saturation Voltage | VCEsat | IC = 10 mA, IB = 0.5 mA | - | - | 75 | mV |
| Base-Emitter Saturation Voltage | VBEsat | IC = 10 mA, IB = 0.5 mA | - | - | 700 | mV |
| Junction Temperature | Tj | - | - | 150 | °C | |
| Storage Temperature | Tstg | - | -65 | 150 | °C |
Key Features
- High Current Gain: The BC856BWE6327BTSA1 has a high DC current gain (hFE) ranging from 125 to 475, making it suitable for applications requiring high amplification.
- Low Collector-Emitter Saturation Voltage: With a low VCEsat of up to 75 mV, this transistor minimizes power losses in saturation.
- High Collector-Emitter Voltage: It can handle a collector-emitter voltage of up to 65 V, providing robust performance in various circuits.
- Compact Package: Available in a small outline package (R-PDSO-G3), it is ideal for space-constrained designs.
Applications
- Audio Frequency (AF) Input Stages: Suitable for use in AF input stages due to its high current gain and low noise characteristics.
- Driver Circuits: Often used in driver applications where high current gain and low saturation voltage are required.
- General-Purpose Amplification: Can be used in a variety of general-purpose amplification circuits where reliability and performance are critical.
- Automotive and Industrial Electronics: Due to its robust specifications, it can be used in automotive and industrial electronic systems.
Q & A
- What is the maximum collector-emitter voltage for the BC856BWE6327BTSA1?
The maximum collector-emitter voltage (VCEO) is 65 V.
- What is the typical DC current gain (hFE) of this transistor?
The typical DC current gain (hFE) ranges from 125 to 475.
- What is the maximum collector current (IC) for this transistor?
The maximum collector current (IC) is 100 mA.
- What is the peak collector current (ICM) for this transistor?
The peak collector current (ICM) is 200 mA for pulse durations of tp ≤ 10 ms.
- What is the junction temperature (Tj) limit for this transistor?
The junction temperature (Tj) limit is 150 °C.
- What is the storage temperature range for this transistor?
The storage temperature range is from -65 °C to 150 °C.
- What is the collector-emitter saturation voltage (VCEsat) for this transistor?
The collector-emitter saturation voltage (VCEsat) is up to 75 mV.
- What is the base-emitter saturation voltage (VBEsat) for this transistor?
The base-emitter saturation voltage (VBEsat) is up to 700 mV.
- In what package is the BC856BWE6327BTSA1 available?
The BC856BWE6327BTSA1 is available in a small outline package (R-PDSO-G3).
- What are some common applications for the BC856BWE6327BTSA1?
Common applications include AF input stages, driver circuits, general-purpose amplification, and use in automotive and industrial electronics.
