BC858BL3E6327
  • Share:

Infineon Technologies BC858BL3E6327

Manufacturer No:
BC858BL3E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858BL3E6327 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This component is part of the BC857 to BC860 series, known for their high current gain and low noise characteristics, making them suitable for various audio and driver applications.

Key Specifications

ParameterSymbolValueUnit
Collector-Base Breakdown VoltageV(BR)CBO50V
Emitter-Base Breakdown VoltageV(BR)EBO5V
Collector CurrentIC100mA
Peak Collector Current (tp ≤ 10 ms)ICM200mA
Total Power Dissipation (TS ≤ 124 °C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Thermal Resistance (Junction to Soldering Point)RthJS≤ 60K/W

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 (except BC857BL3)

Applications

The BC858BL3E6327 is primarily used in audio frequency input stages and driver applications. Its high current gain and low noise characteristics make it suitable for a variety of electronic circuits, including audio amplifiers and general-purpose switching applications.

Q & A

  1. What is the collector-base breakdown voltage of the BC858BL3E6327?
    The collector-base breakdown voltage is 50 V.
  2. What is the maximum collector current for the BC858BL3E6327?
    The maximum collector current is 100 mA.
  3. What is the peak collector current for the BC858BL3E6327?
    The peak collector current is 200 mA for pulse durations of up to 10 ms.
  4. What is the total power dissipation for the BC858BL3E6327?
    The total power dissipation is 250 mW at a temperature of up to 124 °C.
  5. Is the BC858BL3E6327 RoHS compliant?
    Yes, the BC858BL3E6327 is Pb-free and RoHS compliant.
  6. What are the typical applications of the BC858BL3E6327?
    The typical applications include audio frequency input stages and driver applications.
  7. What is the junction temperature range for the BC858BL3E6327?
    The junction temperature range is up to 150 °C.
  8. What is the storage temperature range for the BC858BL3E6327?
    The storage temperature range is from -65 to 150 °C.
  9. Is the BC858BL3E6327 qualified according to AEC Q101?
    No, the BC857BL3 is not qualified according to AEC Q101, but other models in the series are.
  10. What is the thermal resistance of the BC858BL3E6327?
    The thermal resistance from junction to soldering point is ≤ 60 K/W.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
289

Please send RFQ , we will respond immediately.

Same Series
BC857CE6327HTSA1
BC857CE6327HTSA1
TRANS PNP 45V 0.1A SOT23
BC857BE6433HTMA1
BC857BE6433HTMA1
TRANS PNP 45V 0.1A SOT-23
BC858CE6327HTSA1
BC858CE6327HTSA1
TRANS PNP 30V 0.1A SOT-23
BC860CWH6327XTSA1
BC860CWH6327XTSA1
TRANS PNP 45V 0.1A SOT323
BC858BL3E6327
BC858BL3E6327
TRANS PNP 30V 0.1A SOT23
BC 856B E6433
BC 856B E6433
TRANS PNP 65V 0.1A SOT23
BC 857BF E6327
BC 857BF E6327
TRANS PNP 45V 0.1A TSFP-3
BC857BWE6327BTSA1
BC857BWE6327BTSA1
TRANS PNP 45V 0.1A SOT323
BC858BWE6327HTSA1
BC858BWE6327HTSA1
TRANS PNP 30V 0.1A SOT-323
BC 860BF E6327
BC 860BF E6327
TRANS PNP 45V 0.1A TSFP-3
BC857CB5003XT
BC857CB5003XT
TRANS PNP 45V 0.1A SOT23
BC857CWH6433XTMA1
BC857CWH6433XTMA1
TRANS PNP 45V 0.1A SOT323

Related Product By Categories

BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB

Related Product By Brand

BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAL74E6327HTSA1
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
BAS4002S02LRHE6327XTSA1
BAS4002S02LRHE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 200MA TSLP-2
BC847C-B5000
BC847C-B5000
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCX 54-16 E6327
BCX 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT89
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRF4905STRLPBF
IRF4905STRLPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5