BC858BL3E6327
  • Share:

Infineon Technologies BC858BL3E6327

Manufacturer No:
BC858BL3E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858BL3E6327 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This component is part of the BC857 to BC860 series, known for their high current gain and low noise characteristics, making them suitable for various audio and driver applications.

Key Specifications

ParameterSymbolValueUnit
Collector-Base Breakdown VoltageV(BR)CBO50V
Emitter-Base Breakdown VoltageV(BR)EBO5V
Collector CurrentIC100mA
Peak Collector Current (tp ≤ 10 ms)ICM200mA
Total Power Dissipation (TS ≤ 124 °C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Thermal Resistance (Junction to Soldering Point)RthJS≤ 60K/W

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 (except BC857BL3)

Applications

The BC858BL3E6327 is primarily used in audio frequency input stages and driver applications. Its high current gain and low noise characteristics make it suitable for a variety of electronic circuits, including audio amplifiers and general-purpose switching applications.

Q & A

  1. What is the collector-base breakdown voltage of the BC858BL3E6327?
    The collector-base breakdown voltage is 50 V.
  2. What is the maximum collector current for the BC858BL3E6327?
    The maximum collector current is 100 mA.
  3. What is the peak collector current for the BC858BL3E6327?
    The peak collector current is 200 mA for pulse durations of up to 10 ms.
  4. What is the total power dissipation for the BC858BL3E6327?
    The total power dissipation is 250 mW at a temperature of up to 124 °C.
  5. Is the BC858BL3E6327 RoHS compliant?
    Yes, the BC858BL3E6327 is Pb-free and RoHS compliant.
  6. What are the typical applications of the BC858BL3E6327?
    The typical applications include audio frequency input stages and driver applications.
  7. What is the junction temperature range for the BC858BL3E6327?
    The junction temperature range is up to 150 °C.
  8. What is the storage temperature range for the BC858BL3E6327?
    The storage temperature range is from -65 to 150 °C.
  9. Is the BC858BL3E6327 qualified according to AEC Q101?
    No, the BC857BL3 is not qualified according to AEC Q101, but other models in the series are.
  10. What is the thermal resistance of the BC858BL3E6327?
    The thermal resistance from junction to soldering point is ≤ 60 K/W.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
289

Please send RFQ , we will respond immediately.

Same Series
BC857CE6433HTMA1
BC857CE6433HTMA1
TRANS PNP 45V 0.1A SOT23
BC858AE6327HTSA1
BC858AE6327HTSA1
TRANS PNP 30V 0.1A SOT-23
BC 856B E6433
BC 856B E6433
TRANS PNP 65V 0.1A SOT23
BC 856BW E6433
BC 856BW E6433
TRANS PNP 65V 0.1A SOT323
BC 857BF E6327
BC 857BF E6327
TRANS PNP 45V 0.1A TSFP-3
BC857BWE6327BTSA1
BC857BWE6327BTSA1
TRANS PNP 45V 0.1A SOT323
BC857CWE6433HTMA1
BC857CWE6433HTMA1
TRANS PNP 45V 0.1A SOT323
BC 860BF E6327
BC 860BF E6327
TRANS PNP 45V 0.1A TSFP-3
BC860BWE6327HTSA1
BC860BWE6327HTSA1
TRANS PNP 45V 0.1A SOT-323
BC 857B B5003
BC 857B B5003
TRANS PNP 45V 0.1A SOT23
BC 856B E6327
BC 856B E6327
TRANS PNP 65V 0.1A SOT23
BC 856BW H6433
BC 856BW H6433
TRANS PNP 65V 0.1A SOT323

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BC846B215
BC846B215
NXP USA Inc.
0.1A, 65V, NPN, TO 236AB
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
BC846B/DG/B4R
BC846B/DG/B4R
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS 40-04 B5003
BAS 40-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC847C-B5000
BC847C-B5000
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
TLE7368EXUMA1
TLE7368EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36