BC858BL3E6327
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Infineon Technologies BC858BL3E6327

Manufacturer No:
BC858BL3E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858BL3E6327 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This component is part of the BC857 to BC860 series, known for their high current gain and low noise characteristics, making them suitable for various audio and driver applications.

Key Specifications

ParameterSymbolValueUnit
Collector-Base Breakdown VoltageV(BR)CBO50V
Emitter-Base Breakdown VoltageV(BR)EBO5V
Collector CurrentIC100mA
Peak Collector Current (tp ≤ 10 ms)ICM200mA
Total Power Dissipation (TS ≤ 124 °C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Thermal Resistance (Junction to Soldering Point)RthJS≤ 60K/W

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 (except BC857BL3)

Applications

The BC858BL3E6327 is primarily used in audio frequency input stages and driver applications. Its high current gain and low noise characteristics make it suitable for a variety of electronic circuits, including audio amplifiers and general-purpose switching applications.

Q & A

  1. What is the collector-base breakdown voltage of the BC858BL3E6327?
    The collector-base breakdown voltage is 50 V.
  2. What is the maximum collector current for the BC858BL3E6327?
    The maximum collector current is 100 mA.
  3. What is the peak collector current for the BC858BL3E6327?
    The peak collector current is 200 mA for pulse durations of up to 10 ms.
  4. What is the total power dissipation for the BC858BL3E6327?
    The total power dissipation is 250 mW at a temperature of up to 124 °C.
  5. Is the BC858BL3E6327 RoHS compliant?
    Yes, the BC858BL3E6327 is Pb-free and RoHS compliant.
  6. What are the typical applications of the BC858BL3E6327?
    The typical applications include audio frequency input stages and driver applications.
  7. What is the junction temperature range for the BC858BL3E6327?
    The junction temperature range is up to 150 °C.
  8. What is the storage temperature range for the BC858BL3E6327?
    The storage temperature range is from -65 to 150 °C.
  9. Is the BC858BL3E6327 qualified according to AEC Q101?
    No, the BC857BL3 is not qualified according to AEC Q101, but other models in the series are.
  10. What is the thermal resistance of the BC858BL3E6327?
    The thermal resistance from junction to soldering point is ≤ 60 K/W.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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