BC 856BW H6327
  • Share:

Infineon Technologies BC 856BW H6327

Manufacturer No:
BC 856BW H6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC 856BW H6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is designed for general-purpose amplifier applications and is particularly suited for use in industrial control systems. It is a PNP transistor, offering high reliability and robust performance.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Collector Current (Ic) (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 600 mV @ 5 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2 mA, 5 V
Power - Max 250 mW
Frequency - Transition 250 MHz
Operating Temperature 150 °C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323

Key Features

  • High Current Gain: The BC 856BW H6327 has a high DC current gain (hFE) of 200 at 2 mA and 5 V, making it suitable for amplifier applications.
  • Low Collector-Emitter Saturation Voltage: With a Vce saturation of 600 mV at 5 mA and 100 mA, it ensures efficient operation.
  • High Transition Frequency: The transistor has a transition frequency of 250 MHz, which is beneficial for high-frequency applications.
  • Surface Mount Package: The SOT-323 package makes it convenient for surface mount technology (SMT) assembly.
  • High Operating Temperature: It can operate up to a junction temperature of 150°C, enhancing its reliability in various environments.

Applications

  • General-Purpose Amplifiers: Suitable for a wide range of amplifier applications due to its high current gain and low saturation voltage.
  • Industrial Control Systems: Often used in industrial control systems where reliability and robust performance are critical.
  • Automotive Electronics: Can be used in automotive electronics due to its high operating temperature and robust design.
  • Medical Electronics: Its reliability and performance make it a candidate for use in medical devices.

Q & A

  1. What is the transistor type of the BC 856BW H6327?

    The BC 856BW H6327 is a PNP bipolar junction transistor.

  2. What is the maximum collector current of the BC 856BW H6327?

    The maximum collector current is 100 mA.

  3. What is the collector-emitter breakdown voltage of the BC 856BW H6327?

    The collector-emitter breakdown voltage is 65 V.

  4. What is the DC current gain (hFE) of the BC 856BW H6327?

    The DC current gain (hFE) is 200 at 2 mA and 5 V.

  5. What is the maximum power dissipation of the BC 856BW H6327?

    The maximum power dissipation is 250 mW.

  6. What is the transition frequency of the BC 856BW H6327?

    The transition frequency is 250 MHz.

  7. What is the operating temperature range of the BC 856BW H6327?

    The operating temperature range is up to 150°C (junction temperature).

  8. What package type does the BC 856BW H6327 come in?

    The BC 856BW H6327 comes in the SC-70 and SOT-323 packages.

  9. Is the BC 856BW H6327 suitable for surface mount technology (SMT)?

    Yes, it is suitable for surface mount technology (SMT).

  10. What are some common applications of the BC 856BW H6327?

    Common applications include general-purpose amplifiers, industrial control systems, automotive electronics, and medical electronics.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
217

Please send RFQ , we will respond immediately.

Same Series
BC857BE6433HTMA1
BC857BE6433HTMA1
TRANS PNP 45V 0.1A SOT-23
BC858CE6327HTSA1
BC858CE6327HTSA1
TRANS PNP 30V 0.1A SOT-23
BC860CWH6327XTSA1
BC860CWH6327XTSA1
TRANS PNP 45V 0.1A SOT323
BC857BL3E6327XTMA1
BC857BL3E6327XTMA1
TRANS PNP 45V 0.1A TSLP-3-1
BC856BWE6327BTSA1
BC856BWE6327BTSA1
TRANS PNP 65V 0.1A SOT323
BC 856BW E6433
BC 856BW E6433
TRANS PNP 65V 0.1A SOT323
BC 857BT E6327
BC 857BT E6327
TRANS PNP 45V 0.1A SC75
BC857BWE6327BTSA1
BC857BWE6327BTSA1
TRANS PNP 45V 0.1A SOT323
BC857CWE6433HTMA1
BC857CWE6433HTMA1
TRANS PNP 45V 0.1A SOT323
BC 860BF E6327
BC 860BF E6327
TRANS PNP 45V 0.1A TSFP-3
BC860CB5003XT
BC860CB5003XT
TRANS PNP 45V 0.1A SOT23
BC 856BW H6327
BC 856BW H6327
TRANS PNP 65V 0.1A SOT323

Similar Products

Part Number BC 856BW H6327 BC 846BW H6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

Related Product By Categories

BCX56-16,115
BCX56-16,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP

Related Product By Brand

BAW56UE6327
BAW56UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS16SH6727XTSA1
BAS16SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS7004SE6327HTSA1
BAS7004SE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BC847SH6359XTMA1
BC847SH6359XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC860BE6327
BC860BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
BSC016N06NSTATMA1
BSC016N06NSTATMA1
Infineon Technologies
MOSFET N-CH 60V 31A/100A TDSON
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
IPB042N10N3GE8187ATMA1
IPB042N10N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A D2PAK
BSP762TXUMA1
BSP762TXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8
BTS5215LAUMA1
BTS5215LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12