BC857BWE6327BTSA1
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Infineon Technologies BC857BWE6327BTSA1

Manufacturer No:
BC857BWE6327BTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BWE6327BTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. Although this specific part is obsolete and no longer manufactured, it was designed for general-purpose amplifier applications. The BC857 series is known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics, making it suitable for various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -100 mA
DC Current Gain (hFE) hFE 220 - 520 -
Collector-Emitter Saturation Voltage VCE(sat) -0.3 - 0.65 V
Base-Emitter Saturation Voltage VBE(sat) -0.7 - 0.9 V
Package Type - SC-70/SOT-323 -
RoHS Compliance - Pb-free, Halogen Free/BFR Free -

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Pb-free (RoHS compliant) package
  • AEC Q101 qualified and PPAP capable
  • Complementary types available (e.g., BC847 for NPN)

Applications

The BC857BWE6327BTSA1 is suitable for various applications, including:

  • AF input stages
  • Driver applications
  • General-purpose amplifier applications

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC857BWE6327BTSA1?

    The collector-emitter voltage (VCEO) is -45 V.

  2. What is the package type of the BC857BWE6327BTSA1?

    The package type is SC-70/SOT-323.

  3. Is the BC857BWE6327BTSA1 RoHS compliant?

    Yes, it is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

  4. What are the typical applications of the BC857BWE6327BTSA1?

    It is used in AF input stages, driver applications, and general-purpose amplifier applications.

  5. What is the DC current gain (hFE) range of the BC857BWE6327BTSA1?

    The DC current gain (hFE) ranges from 220 to 520.

  6. Is the BC857BWE6327BTSA1 AEC Q101 qualified?

    Yes, it is AEC Q101 qualified and PPAP capable.

  7. What is the collector-emitter saturation voltage (VCE(sat)) of the BC857BWE6327BTSA1?

    The collector-emitter saturation voltage (VCE(sat)) ranges from -0.3 to -0.65 V.

  8. What is the base-emitter saturation voltage (VBE(sat)) of the BC857BWE6327BTSA1?

    The base-emitter saturation voltage (VBE(sat)) ranges from -0.7 to -0.9 V.

  9. Is the BC857BWE6327BTSA1 still in production?

    No, the BC857BWE6327BTSA1 is obsolete and no longer manufactured.

  10. What are the complementary types of the BC857BWE6327BTSA1?

    The complementary types include BC847 for NPN transistors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC857BWE6327BTSA1 BC857CWE6327BTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

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