BC 856BW H6433
  • Share:

Infineon Technologies BC 856BW H6433

Manufacturer No:
BC 856BW H6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC 856BW H6433 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This PNP transistor is designed for general-purpose amplifier applications, particularly in industrial control systems and audio frequency circuits. It is part of the BC856 series, known for its high current gain and low collector-emitter saturation voltage.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Power - Max 250 mW
Frequency - Transition 250 MHz
Operating Temperature 150 °C (TJ)
Mounting Type Surface Mount
Package / Case SOT-323-3

Key Features

  • High current gain, making it suitable for amplifier applications.
  • Low collector-emitter saturation voltage (Vce Sat) of 650mV @ 5mA, 100mA.
  • High transition frequency of 250MHz, suitable for high-frequency applications.
  • Maximum power dissipation of 250mW.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Lead-free and RoHS compliant.

Applications

  • General-purpose amplifier applications in industrial control systems.
  • Audio frequency amplifier circuits.
  • Automotive systems due to AEC-Q101 qualification.
  • Small signal applications requiring high current gain and low saturation voltage.

Q & A

  1. What is the transistor type of the BC 856BW H6433?

    The BC 856BW H6433 is a PNP bipolar junction transistor.

  2. What is the maximum collector current of the BC 856BW H6433?

    The maximum collector current is 100mA.

  3. What is the maximum collector-emitter breakdown voltage of the BC 856BW H6433?

    The maximum collector-emitter breakdown voltage is 65V.

  4. What is the DC current gain (hFE) of the BC 856BW H6433?

    The DC current gain (hFE) is 220 @ 2mA, 5V.

  5. What is the maximum power dissipation of the BC 856BW H6433?

    The maximum power dissipation is 250mW.

  6. What is the operating temperature range of the BC 856BW H6433?

    The operating temperature range is up to 150°C (TJ).

  7. Is the BC 856BW H6433 AEC-Q101 qualified?
  8. What is the package type of the BC 856BW H6433?

    The package type is SOT-323-3.

  9. Is the BC 856BW H6433 lead-free and RoHS compliant?
  10. What are some common applications of the BC 856BW H6433?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Same Series
BC857CE6433HTMA1
BC857CE6433HTMA1
TRANS PNP 45V 0.1A SOT23
BC858CE6433HTMA1
BC858CE6433HTMA1
TRANS PNP 30V 0.1A SOT23
BC858BE6327HTSA1
BC858BE6327HTSA1
TRANS PNP 30V 0.1A SOT-23
BC858CE6327HTSA1
BC858CE6327HTSA1
TRANS PNP 30V 0.1A SOT-23
BC857CWH6327XTSA1
BC857CWH6327XTSA1
TRANS PNP 45V 0.1A SOT323
BC858BL3E6327
BC858BL3E6327
TRANS PNP 30V 0.1A SOT23
BC 856B E6433
BC 856B E6433
TRANS PNP 65V 0.1A SOT23
BC856BWE6327BTSA1
BC856BWE6327BTSA1
TRANS PNP 65V 0.1A SOT323
BC857CB5003XT
BC857CB5003XT
TRANS PNP 45V 0.1A SOT23
BC860CB5003XT
BC860CB5003XT
TRANS PNP 45V 0.1A SOT23
BC 856B E6327
BC 856B E6327
TRANS PNP 65V 0.1A SOT23
BC857CWH6433XTMA1
BC857CWH6433XTMA1
TRANS PNP 45V 0.1A SOT323

Similar Products

Part Number BC 856BW H6433 BC 856BW E6433
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

Related Product By Categories

BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

BAV 99 B6327
BAV 99 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3
BCP5316H6327XTSA1
BCP5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
IRF4905STRLPBF
IRF4905STRLPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
BTS452RATMA1
BTS452RATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5