BC 856BW H6433
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Infineon Technologies BC 856BW H6433

Manufacturer No:
BC 856BW H6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT323
Delivery:
Payment:
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Product Introduction

Overview

The BC 856BW H6433 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This PNP transistor is designed for general-purpose amplifier applications, particularly in industrial control systems and audio frequency circuits. It is part of the BC856 series, known for its high current gain and low collector-emitter saturation voltage.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Power - Max 250 mW
Frequency - Transition 250 MHz
Operating Temperature 150 °C (TJ)
Mounting Type Surface Mount
Package / Case SOT-323-3

Key Features

  • High current gain, making it suitable for amplifier applications.
  • Low collector-emitter saturation voltage (Vce Sat) of 650mV @ 5mA, 100mA.
  • High transition frequency of 250MHz, suitable for high-frequency applications.
  • Maximum power dissipation of 250mW.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Lead-free and RoHS compliant.

Applications

  • General-purpose amplifier applications in industrial control systems.
  • Audio frequency amplifier circuits.
  • Automotive systems due to AEC-Q101 qualification.
  • Small signal applications requiring high current gain and low saturation voltage.

Q & A

  1. What is the transistor type of the BC 856BW H6433?

    The BC 856BW H6433 is a PNP bipolar junction transistor.

  2. What is the maximum collector current of the BC 856BW H6433?

    The maximum collector current is 100mA.

  3. What is the maximum collector-emitter breakdown voltage of the BC 856BW H6433?

    The maximum collector-emitter breakdown voltage is 65V.

  4. What is the DC current gain (hFE) of the BC 856BW H6433?

    The DC current gain (hFE) is 220 @ 2mA, 5V.

  5. What is the maximum power dissipation of the BC 856BW H6433?

    The maximum power dissipation is 250mW.

  6. What is the operating temperature range of the BC 856BW H6433?

    The operating temperature range is up to 150°C (TJ).

  7. Is the BC 856BW H6433 AEC-Q101 qualified?
  8. What is the package type of the BC 856BW H6433?

    The package type is SOT-323-3.

  9. Is the BC 856BW H6433 lead-free and RoHS compliant?
  10. What are some common applications of the BC 856BW H6433?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC 856BW H6433 BC 856BW E6433
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

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