BC858BE6327HTSA1
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Infineon Technologies BC858BE6327HTSA1

Manufacturer No:
BC858BE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858BE6327HTSA1 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for audio frequency (AF) input stages and driver applications. It is characterized by its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits. The transistor is packaged in a surface-mount PG-SOT23 format, which is compact and suitable for modern electronic designs.

Key Specifications

ParameterValue
TypePNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce)30 V
Collector Current (Ic)100 mA
Frequency (fT)250 MHz
Power Dissipation (Pd)330 mW
PackagePG-SOT23 (Surface Mount)

Key Features

  • High current gain, making it suitable for amplification and switching applications.
  • Low collector-emitter saturation voltage, which reduces power consumption and heat generation.
  • Compact PG-SOT23 surface-mount package, ideal for space-saving designs.
  • Designed for audio frequency input stages and driver applications.

Applications

The BC858BE6327HTSA1 is primarily used in audio frequency circuits, such as audio amplifiers, pre-amplifiers, and other audio processing equipment. It is also suitable for general-purpose switching and amplification in various electronic devices. Additionally, its high frequency capability makes it a good choice for RF and high-frequency applications.

Q & A

  1. What is the type of the BC858BE6327HTSA1 transistor? The BC858BE6327HTSA1 is a PNP bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter voltage of the BC858BE6327HTSA1? The maximum collector-emitter voltage is 30 V.
  3. What is the maximum collector current of the BC858BE6327HTSA1? The maximum collector current is 100 mA.
  4. What is the frequency range of the BC858BE6327HTSA1? The transistor has a frequency (fT) of 250 MHz.
  5. What is the power dissipation of the BC858BE6327HTSA1? The power dissipation (Pd) is 330 mW.
  6. In what package is the BC858BE6327HTSA1 available? The transistor is available in a PG-SOT23 surface-mount package.
  7. What are the primary applications of the BC858BE6327HTSA1? The primary applications include audio frequency input stages, driver applications, and general-purpose switching and amplification.
  8. Why is the BC858BE6327HTSA1 suitable for audio frequency applications? It is suitable due to its high current gain and low collector-emitter saturation voltage.
  9. Can the BC858BE6327HTSA1 be used in high-frequency applications? Yes, it can be used in high-frequency applications due to its 250 MHz frequency capability.
  10. Is the BC858BE6327HTSA1 still in production? No, the BC858BE6327HTSA1 is scheduled for obsolescence and will be discontinued.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC858BE6327HTSA1 BC858CE6327HTSA1 BC858BWE6327HTSA1 BC858AE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Obsolete Not For New Designs
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 330 mW 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT323 PG-SOT23

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