BC857BE6433HTMA1
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Infineon Technologies BC857BE6433HTMA1

Manufacturer No:
BC857BE6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BE6433HTMA1 is a highly versatile and reliable single bipolar junction transistor (BJT) produced by Infineon Technologies. This PNP transistor is packaged in a 3-pin SOT-23 (TO-236-3, SC-59) surface mount configuration, making it suitable for a wide range of electronic projects. It is particularly noted for its high performance and multifunctional capabilities, adhering to the AEC-Q101 automotive qualification standard.

Key Specifications

Parameter Value
Transistor Type PNP Bipolar Junction Transistor (BJT)
Package/Case SOT-23-3 (TO-236-3, SC-59)
Collector-Emitter Voltage (VCEO) Max 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Collector-Emitter Saturation Voltage 250 mV
Maximum DC Collector Current 100 mA
Power Dissipation (Pd) 330 mW
Gain Bandwidth Product (fT) 250 MHz
Minimum Operating Temperature -65°C
Maximum Operating Temperature +150°C
Qualification AEC-Q101
DC Current Gain (hfe) Min/Max 220 / 475

Key Features

  • High Performance: The BC857BE6433HTMA1 offers a high gain bandwidth product of 250 MHz, making it suitable for high-frequency applications.
  • Automotive Qualification: Compliant with the AEC-Q101 standard, ensuring reliability and durability in automotive and other demanding environments.
  • Compact Packaging: The SOT-23-3 package is ideal for space-constrained designs, providing a small footprint without compromising performance.
  • Low Power Consumption: With a power dissipation of 330 mW, this transistor is energy-efficient and suitable for battery-powered devices.
  • Wide Operating Temperature Range: Operates from -65°C to +150°C, making it versatile for various environmental conditions.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is widely used in automotive electronics, including control units, sensors, and actuators.
  • Consumer Electronics: Suitable for use in audio amplifiers, switching circuits, and other consumer electronic devices.
  • Industrial Control Systems: Used in industrial automation, motor control, and other high-reliability applications.
  • Medical Devices: Can be used in medical equipment where high reliability and low power consumption are critical.

Q & A

  1. What is the package type of the BC857BE6433HTMA1?

    The BC857BE6433HTMA1 is packaged in a 3-pin SOT-23 (TO-236-3, SC-59) surface mount configuration.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC857BE6433HTMA1?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  3. What is the power dissipation (Pd) of the BC857BE6433HTMA1?

    The power dissipation (Pd) is 330 mW.

  4. What is the gain bandwidth product (fT) of the BC857BE6433HTMA1?

    The gain bandwidth product (fT) is 250 MHz.

  5. What is the operating temperature range of the BC857BE6433HTMA1?

    The operating temperature range is from -65°C to +150°C.

  6. Is the BC857BE6433HTMA1 qualified for automotive use?

    Yes, it is compliant with the AEC-Q101 automotive qualification standard.

  7. What is the maximum DC collector current of the BC857BE6433HTMA1?

    The maximum DC collector current is 100 mA.

  8. What is the emitter-base voltage (VEBO) of the BC857BE6433HTMA1?

    The emitter-base voltage (VEBO) is 5 V.

  9. What is the collector-emitter saturation voltage of the BC857BE6433HTMA1?

    The collector-emitter saturation voltage is 250 mV.

  10. Can the BC857BE6433HTMA1 be used in high-frequency applications?

    Yes, due to its high gain bandwidth product, it is suitable for high-frequency applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC857BE6433HTMA1 BC857CE6433HTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 330 mW 330 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

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