BC817UPNB6327XT
  • Share:

Infineon Technologies BC817UPNB6327XT

Manufacturer No:
BC817UPNB6327XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 45V 0.5A SC74-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817UPNB6327XT is a bipolar junction transistor (BJT) array produced by Infineon Technologies. This component is designed for use in audio frequency (AF) stages and driver applications. It features two internally isolated NPN transistors in a single SC74 package, making it suitable for a variety of electronic circuits. The BC817UPNB6327XT is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 500 mA
Peak collector current (tp ≤ 10 ms) ICM 1000 mA
Base current IB 100 mA
Peak base current IBM 200 mA
Total power dissipation (TS ≤ 115 °C) Ptot 330 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 to 150 °C
Collector-emitter saturation voltage (VCEsat) VCEsat 0.4 to 0.8 V
Base-emitter saturation voltage (VBEsat) VBEsat 2.0 to 4.0 V

Key Features

  • High current gain, making it suitable for amplifier and driver applications.
  • Low collector-emitter saturation voltage, ensuring efficient operation.
  • Two internally isolated NPN transistors in a single SC74 package, providing compact design and reduced component count.
  • Pb-free and RoHS compliant, adhering to environmental regulations.
  • High junction temperature rating of up to 150 °C, suitable for various operating conditions.

Applications

  • AUDIO FREQUENCY (AF) STAGES: Ideal for use in audio amplifiers and other AF circuits due to its high current gain and low noise characteristics.
  • DRIVER APPLICATIONS: Suitable for driving loads such as LEDs, relays, and small motors.
  • GENERAL PURPOSE AMPLIFIERS: Can be used in a variety of general-purpose amplifier circuits requiring high current gain and low saturation voltage.
  • SWITCHING CIRCUITS: Applicable in switching circuits where fast switching times and low saturation voltages are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817UPNB6327XT?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the typical collector-emitter saturation voltage of this transistor?

    The typical collector-emitter saturation voltage (VCEsat) ranges from 0.4 to 0.8 V.

  3. Is the BC817UPNB6327XT RoHS compliant?
  4. What is the maximum collector current of this transistor?

    The maximum collector current (IC) is 500 mA.

  5. What is the junction temperature rating of the BC817UPNB6327XT?

    The junction temperature rating (Tj) is up to 150 °C.

  6. What type of package does the BC817UPNB6327XT come in?

    The BC817UPNB6327XT comes in an SC74 package.

  7. What are the typical applications of the BC817UPNB6327XT?

    Typical applications include AF stages, driver applications, general-purpose amplifiers, and switching circuits.

  8. What is the maximum base current of the BC817UPNB6327XT?

    The maximum base current (IB) is 100 mA.

  9. What is the total power dissipation of the BC817UPNB6327XT at TS ≤ 115 °C?

    The total power dissipation (Ptot) is 330 mW at TS ≤ 115 °C.

  10. Is the BC817UPNB6327XT suitable for high-temperature environments?

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:330mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:PG-SC74-6
0 Remaining View Similar

In Stock

-
214

Please send RFQ , we will respond immediately.

Same Series
BC817UPNE6327HTSA1
BC817UPNE6327HTSA1
TRANS NPN/PNP 45V 0.5A SC74

Related Product By Categories

PBSS4240DPN,115
PBSS4240DPN,115
Nexperia USA Inc.
TRANS NPN/PNP 40V 6TSOP
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
BC846S-TP
BC846S-TP
Micro Commercial Co
DUALNPNSMALLSIGNALTRANSISTORSOT-
NST30010MXV6T1G
NST30010MXV6T1G
onsemi
TRANS 2PNP 30V 0.1A SOT563
BC857SE6327
BC857SE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC80725MTFNL
BC80725MTFNL
Fairchild Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC847BV-7
BC847BV-7
Diodes Incorporated
TRANS 2NPN 45V 0.1A SOT563
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
BC847BS/ZLX
BC847BS/ZLX
Nexperia USA Inc.
TRANS 2NPN 45V 0.1A 6TSSOP
BC857BSH-QX
BC857BSH-QX
Nexperia USA Inc.
BC857BSH-QX
BCM857BSH-QF
BCM857BSH-QF
Nexperia USA Inc.
BCM857BSH-QF

Related Product By Brand

BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS28
BAS28
Infineon Technologies
SWITCHING DIODE ARRAY
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC846SE6327BTSA1
BC846SE6327BTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC817K16E6327HTSA1
BC817K16E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTS723GWXUMA1
BTS723GWXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14