BC817UPNB6327XT
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Infineon Technologies BC817UPNB6327XT

Manufacturer No:
BC817UPNB6327XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 45V 0.5A SC74-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817UPNB6327XT is a bipolar junction transistor (BJT) array produced by Infineon Technologies. This component is designed for use in audio frequency (AF) stages and driver applications. It features two internally isolated NPN transistors in a single SC74 package, making it suitable for a variety of electronic circuits. The BC817UPNB6327XT is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 500 mA
Peak collector current (tp ≤ 10 ms) ICM 1000 mA
Base current IB 100 mA
Peak base current IBM 200 mA
Total power dissipation (TS ≤ 115 °C) Ptot 330 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 to 150 °C
Collector-emitter saturation voltage (VCEsat) VCEsat 0.4 to 0.8 V
Base-emitter saturation voltage (VBEsat) VBEsat 2.0 to 4.0 V

Key Features

  • High current gain, making it suitable for amplifier and driver applications.
  • Low collector-emitter saturation voltage, ensuring efficient operation.
  • Two internally isolated NPN transistors in a single SC74 package, providing compact design and reduced component count.
  • Pb-free and RoHS compliant, adhering to environmental regulations.
  • High junction temperature rating of up to 150 °C, suitable for various operating conditions.

Applications

  • AUDIO FREQUENCY (AF) STAGES: Ideal for use in audio amplifiers and other AF circuits due to its high current gain and low noise characteristics.
  • DRIVER APPLICATIONS: Suitable for driving loads such as LEDs, relays, and small motors.
  • GENERAL PURPOSE AMPLIFIERS: Can be used in a variety of general-purpose amplifier circuits requiring high current gain and low saturation voltage.
  • SWITCHING CIRCUITS: Applicable in switching circuits where fast switching times and low saturation voltages are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817UPNB6327XT?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the typical collector-emitter saturation voltage of this transistor?

    The typical collector-emitter saturation voltage (VCEsat) ranges from 0.4 to 0.8 V.

  3. Is the BC817UPNB6327XT RoHS compliant?
  4. What is the maximum collector current of this transistor?

    The maximum collector current (IC) is 500 mA.

  5. What is the junction temperature rating of the BC817UPNB6327XT?

    The junction temperature rating (Tj) is up to 150 °C.

  6. What type of package does the BC817UPNB6327XT come in?

    The BC817UPNB6327XT comes in an SC74 package.

  7. What are the typical applications of the BC817UPNB6327XT?

    Typical applications include AF stages, driver applications, general-purpose amplifiers, and switching circuits.

  8. What is the maximum base current of the BC817UPNB6327XT?

    The maximum base current (IB) is 100 mA.

  9. What is the total power dissipation of the BC817UPNB6327XT at TS ≤ 115 °C?

    The total power dissipation (Ptot) is 330 mW at TS ≤ 115 °C.

  10. Is the BC817UPNB6327XT suitable for high-temperature environments?

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:330mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:PG-SC74-6
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