BC856BS/DG/B2,115
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Nexperia USA Inc. BC856BS/DG/B2,115

Manufacturer No:
BC856BS/DG/B2,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS GEN PURPOSE SC-88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BS/DG/B2,115 is a dual PNP general-purpose transistor manufactured by Nexperia USA Inc. This component is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It features a compact 6-TSSOP (SOT363) package, making it suitable for space-constrained designs. The transistor is known for its low collector-emitter saturation voltage and closely matched current gain, which reduces the number of components and board space required in many applications.

Key Specifications

Parameter Value Unit
Transistor Type 2 PNP (Dual) -
Collector-Emitter Breakdown Voltage (VCEO) 65 V
Collector Current (IC) 100 mA
Collector-Emitter Saturation Voltage (Vce(sat)) 300 mV @ 5 mA, 100 mA mV
Collector Cutoff Current (ICBO) 15 nA nA
DC Current Gain (hFE) 200 - 450 @ 2 mA, 5 V -
Power Dissipation (Ptot) 300 mW
Transition Frequency (ft) 100 MHz
Operating Junction Temperature (TJ) 150 °C
Package 6-TSSOP (SOT363) -

Key Features

  • Low Collector-Emitter Saturation Voltage: Ensures efficient operation with minimal voltage drop.
  • Closely Matched Current Gain: Reduces the number of components and board space required.
  • Low Collector Capacitance: Enhances high-frequency performance.
  • Compact 6-TSSOP Package: Suitable for space-constrained designs.
  • High Transition Frequency: Supports high-speed switching applications.

Applications

The BC856BS/DG/B2,115 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Suitable for automotive qualified designs due to its robust performance and reliability.
  • Industrial Electronics: Used in control circuits, amplifiers, and switching applications.
  • Consumer Electronics: Found in audio equipment, home appliances, and other consumer devices.
  • Power and Computing Systems: Used in power management and computing applications where high reliability and efficiency are required.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC856BS/DG/B2,115?

    The collector-emitter breakdown voltage (VCEO) is 65 V.

  2. What is the maximum collector current of the BC856BS/DG/B2,115?

    The maximum collector current (IC) is 100 mA.

  3. What is the typical collector-emitter saturation voltage of the BC856BS/DG/B2,115?

    The typical collector-emitter saturation voltage (Vce(sat)) is 300 mV at 5 mA and 100 mA.

  4. What is the DC current gain (hFE) of the BC856BS/DG/B2,115?

    The DC current gain (hFE) ranges from 200 to 450 at 2 mA and 5 V.

  5. What is the maximum power dissipation of the BC856BS/DG/B2,115?

    The maximum power dissipation (Ptot) is 300 mW.

  6. What is the transition frequency of the BC856BS/DG/B2,115?

    The transition frequency (ft) is 100 MHz.

  7. What is the operating junction temperature range of the BC856BS/DG/B2,115?

    The operating junction temperature (TJ) is up to 150 °C.

  8. In what package is the BC856BS/DG/B2,115 available?

    The BC856BS/DG/B2,115 is available in a 6-TSSOP (SOT363) package.

  9. Is the BC856BS/DG/B2,115 automotive qualified?

    Yes, the BC856BS/DG/B2,115 is automotive qualified, meeting AEC-Q101 standards.

  10. Where can I purchase the BC856BS/DG/B2,115?

    The BC856BS/DG/B2,115 can be purchased from various distributors, including Nexperia's official distributors and online electronics retailers.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:300mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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