MC1413BDR2
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onsemi MC1413BDR2

Manufacturer No:
MC1413BDR2
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS 7NPN DARL 50V 0.5A 16SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MC1413BDR2, produced by onsemi, is a high voltage, high current Darlington transistor array. This component features seven NPN Darlington connected transistors, making it well-suited for driving various loads such as lamps, relays, and printer hammers in industrial and consumer applications. The device is designed to handle high breakdown voltages and includes internal suppression diodes to mitigate issues associated with inductive loads. It is available in Pb-free packages, which is beneficial for environmentally friendly designs.

Key Specifications

Parameter Symbol Value Unit
Output Voltage VO 50 V
Input Voltage VI 30 V
Collector Current - Continuous IC 500 mA
Base Current - Continuous IB 25 mA
Operating Ambient Temperature Range TA -40 to +85 °C
Storage Temperature Range Tstg -55 to +150 °C
Junction Temperature TJ 150 °C
Thermal Resistance, Junction-to-Ambient RθJA 100 °C/W
Electrostatic Discharge Sensitivity (HBM) ESD 2000 V
Collector-Emitter Saturation Voltage (IC = 350 mA, IB = 500 μA) VCE(sat) 1.1 V
Input Current - On Condition (VI = 3.85 V) II(on) 0.93 - 1.35 mA
Turn-On Delay Time ton 0.25 - 1.0 μs
Turn-Off Delay Time toff 0.25 - 1.0 μs

Key Features

  • High voltage and high current capabilities, suitable for driving lamps, relays, and printer hammers.
  • Internal suppression diodes to protect against inductive load issues.
  • Pb-free packages available, supporting environmentally friendly designs.
  • Compatible with 5.0 V TTL or CMOS logic systems due to the 2.7 kΩ series input resistor.
  • NCV prefix available for automotive and other applications requiring site and change control.
  • High breakdown voltage and peak inrush currents up to 500 mA.
  • Low collector-emitter saturation voltage (VCE(sat)) for efficient operation.

Applications

  • Industrial control systems: Driving relays, solenoids, and other high-current devices.
  • Consumer electronics: Controlling lamps, motors, and other high-voltage loads.
  • Automotive systems: Suitable for applications requiring high reliability and temperature range, marked with the NCV prefix.
  • Printer and plotter systems: Driving printer hammers and other high-current actuators.
  • General-purpose switching and amplification: Where high current gain and voltage handling are necessary.

Q & A

  1. What is the MC1413BDR2 used for?

    The MC1413BDR2 is used for driving high-current loads such as lamps, relays, and printer hammers in various industrial and consumer applications.

  2. What are the key features of the MC1413BDR2?

    Key features include high voltage and high current capabilities, internal suppression diodes, Pb-free packages, and compatibility with 5.0 V TTL or CMOS logic.

  3. What is the maximum collector current of the MC1413BDR2?

    The maximum collector current is 500 mA.

  4. What is the operating temperature range of the MC1413BDR2?

    The operating ambient temperature range is -40°C to +85°C.

  5. Is the MC1413BDR2 suitable for automotive applications?
  6. What is the thermal resistance of the MC1413BDR2?

    The thermal resistance, junction-to-ambient, is 100°C/W.

  7. How does the MC1413BDR2 protect against inductive loads?

    The device includes internal suppression diodes to protect against issues associated with inductive loads.

  8. What is the collector-emitter saturation voltage (VCE(sat)) of the MC1413BDR2?

    The VCE(sat) is typically 1.1 V at IC = 350 mA and IB = 500 μA.

  9. What are the typical turn-on and turn-off delay times of the MC1413BDR2?

    The turn-on and turn-off delay times are both typically between 0.25 μs and 1.0 μs.

  10. Is the MC1413BDR2 available in different package types?

Product Attributes

Transistor Type:7 NPN Darlington
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 350mA, 2V
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:16-SOIC
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Similar Products

Part Number MC1413BDR2 MC1413BDR2G MC1413DR2
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
Transistor Type 7 NPN Darlington 7 NPN Darlington 7 NPN Darlington
Current - Collector (Ic) (Max) 500mA 500mA 500mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA 1.6V @ 500µA, 350mA 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V 1000 @ 350mA, 2V 1000 @ 350mA, 2V
Power - Max - - -
Frequency - Transition - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width) 16-SOIC (0.154", 3.90mm Width) 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC 16-SOIC 16-SOIC

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