BCM847DS/DG/B2 115
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NXP USA Inc. BCM847DS/DG/B2 115

Manufacturer No:
BCM847DS/DG/B2 115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCM847DS/DG/B2 115 is an NPN/NPN matched double transistor produced by Nexperia, although it was previously associated with NXP USA Inc. before the transition. This component is housed in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally, making it suitable for various precision applications. The BCM847DS is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

Type numberPackageSize (mm)PolarityV CEO [max] (V)I C [max] (mA)h FE [min]h FE [max]h FE1 / h FE2 [min]V BE1 / V BE2 [max] (mV)
BCM847DSSOT457 (TSOP6)2.9 x 1.5 x 1NPN451002004500.92

Key Features

  • Current gain matching
  • Base-emitter voltage matching
  • Drop-in replacement for standard double transistors
  • AEC-Q101 qualified for automotive and other high-reliability applications
  • Full internal isolation of the transistors
  • Suitable for current mirror and differential amplifier applications

Applications

The BCM847DS/DG/B2 115 is versatile and can be used in a variety of applications, including:

  • Automotive systems due to its AEC-Q101 qualification
  • Current mirrors and differential amplifiers in precision analog circuits
  • General-purpose bipolar transistor applications requiring matched pairs
  • High-reliability industrial and consumer electronics

Q & A

  1. What is the package type of the BCM847DS/DG/B2 115?
    The BCM847DS/DG/B2 115 is packaged in a SOT457 (TSOP6) Surface-Mounted Device (SMD) plastic package.
  2. What is the maximum collector-emitter voltage (V CEO) for the BCM847DS?
    The maximum collector-emitter voltage (V CEO) is 45 V.
  3. What is the maximum collector current (I C) for the BCM847DS?
    The maximum collector current (I C) is 100 mA.
  4. Is the BCM847DS AEC-Q101 qualified?
    Yes, the BCM847DS is AEC-Q101 qualified.
  5. What are the key features of the BCM847DS?
    The key features include current gain matching, base-emitter voltage matching, and full internal isolation of the transistors.
  6. What are some common applications of the BCM847DS?
    Common applications include automotive systems, current mirrors, differential amplifiers, and general-purpose bipolar transistor applications.
  7. How are the transistors in the BCM847DS isolated?
    The transistors in the BCM847DS are fully isolated internally.
  8. What is the size of the SOT457 package?
    The size of the SOT457 package is 2.9 x 1.5 x 1 mm.
  9. Can the BCM847DS be used as a drop-in replacement for standard double transistors?
    Yes, the BCM847DS can be used as a drop-in replacement for standard double transistors.
  10. What is the minimum current gain (h FE) for the BCM847DS?
    The minimum current gain (h FE) is 200.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCM847DS/DG/B2 115 BCM847DS/DG/B2115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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