BCM847DS/DG/B2115
  • Share:

NXP USA Inc. BCM847DS/DG/B2115

Manufacturer No:
BCM847DS/DG/B2115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCM847DS/DG/B2 115 is an NPN/NPN matched double transistor produced by NXP USA Inc., now part of Nexperia. This component is designed for high precision and reliability, particularly in automotive and general-purpose applications. It is packaged in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package, ensuring compact and efficient integration into various electronic systems.

Key Specifications

ParameterValue
Type numberBCM847DS
PackageSOT457 (TSOP6)
Size (mm)2.9 x 1.5 x 1
PolarityNPN/NPN
VCEO [max] (V)45
IC [max] (mA)100
hFE [min]200
hFE [max]450
hFE1 / hFE2 [min]0.9
VBE1 / VBE2 [max] (mV)2

Key Features

  • Current gain matching and base-emitter voltage matching for high precision.
  • Drop-in replacement for standard double transistors.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
  • Internally fully isolated transistors.
  • Suitable for applications such as current mirrors and differential amplifiers.

Applications

The BCM847DS/DG/B2 115 is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General-purpose electronics: Ideal for use in consumer electronics, industrial control systems, and other general-purpose applications.
  • Current mirrors and differential amplifiers: The matched characteristics make it suitable for these types of circuits.

Q & A

  1. What is the package type of the BCM847DS/DG/B2 115?
    The BCM847DS/DG/B2 115 is packaged in a SOT457 (TSOP6) Surface-Mounted Device (SMD) plastic package.
  2. What is the maximum collector-emitter voltage (VCEO) of the BCM847DS/DG/B2 115?
    The maximum collector-emitter voltage (VCEO) is 45V.
  3. What is the maximum collector current (IC) of the BCM847DS/DG/B2 115?
    The maximum collector current (IC) is 100mA.
  4. Is the BCM847DS/DG/B2 115 AEC-Q101 qualified?
    Yes, the BCM847DS/DG/B2 115 is AEC-Q101 qualified.
  5. What are the typical applications of the BCM847DS/DG/B2 115?
    The typical applications include automotive systems, general-purpose electronics, current mirrors, and differential amplifiers.
  6. What is the size of the SOT457 package?
    The size of the SOT457 package is 2.9 x 1.5 x 1 mm.
  7. Are the transistors internally isolated?
    Yes, the transistors in the BCM847DS/DG/B2 115 are internally fully isolated.
  8. What is the minimum current gain (hFE) of the BCM847DS/DG/B2 115?
    The minimum current gain (hFE) is 200.
  9. What is the maximum base-emitter voltage difference (VBE1 / VBE2)?
    The maximum base-emitter voltage difference is 2 mV.
  10. Can the BCM847DS/DG/B2 115 be used as a drop-in replacement for standard double transistors?
    Yes, it can be used as a drop-in replacement for standard double transistors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.06
4,432

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP

Similar Products

Part Number BCM847DS/DG/B2115 BCM847DS/DG/B2 115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

Related Product By Categories

ULN2803ADWR
ULN2803ADWR
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
BC847BV,115
BC847BV,115
Nexperia USA Inc.
TRANS 2NPN 45V 0.1A SOT666
PEMX1,115
PEMX1,115
Nexperia USA Inc.
TRANS 2NPN 40V 0.1A SOT666
NST3906DXV6T1G
NST3906DXV6T1G
onsemi
TRANS 2PNP 40V 0.2A SOT563
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
SN75468NSRG4
SN75468NSRG4
Texas Instruments
TRANS 7NPN DARL 100V 0.5A 16SO
BC846S/DG/B4F
BC846S/DG/B4F
Nexperia USA Inc.
TRANSISTOR GEN PURP
BC847BS/ZLF
BC847BS/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
BC847BS/ZLX
BC847BS/ZLX
Nexperia USA Inc.
TRANS 2NPN 45V 0.1A 6TSSOP
BC846SHX
BC846SHX
Nexperia USA Inc.
BC846SHX
BC846BSH-QF
BC846BSH-QF
Nexperia USA Inc.
BC846BSH-QF

Related Product By Brand

AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
MCIMX6Q5EYM10ADR
MCIMX6Q5EYM10ADR
NXP USA Inc.
IC MPU I.MX6Q 1.0GHZ 624FCBGA
LS1012AXN7KKB
LS1012AXN7KKB
NXP USA Inc.
LS1012A XT 1GHZ RV2
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
PCA85133U/2DA/Q1Z
PCA85133U/2DA/Q1Z
NXP USA Inc.
IC DRVR 7 SEGMENT DIE
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX