BCM847DS/DG/B2115
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NXP USA Inc. BCM847DS/DG/B2115

Manufacturer No:
BCM847DS/DG/B2115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCM847DS/DG/B2 115 is an NPN/NPN matched double transistor produced by NXP USA Inc., now part of Nexperia. This component is designed for high precision and reliability, particularly in automotive and general-purpose applications. It is packaged in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package, ensuring compact and efficient integration into various electronic systems.

Key Specifications

ParameterValue
Type numberBCM847DS
PackageSOT457 (TSOP6)
Size (mm)2.9 x 1.5 x 1
PolarityNPN/NPN
VCEO [max] (V)45
IC [max] (mA)100
hFE [min]200
hFE [max]450
hFE1 / hFE2 [min]0.9
VBE1 / VBE2 [max] (mV)2

Key Features

  • Current gain matching and base-emitter voltage matching for high precision.
  • Drop-in replacement for standard double transistors.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
  • Internally fully isolated transistors.
  • Suitable for applications such as current mirrors and differential amplifiers.

Applications

The BCM847DS/DG/B2 115 is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General-purpose electronics: Ideal for use in consumer electronics, industrial control systems, and other general-purpose applications.
  • Current mirrors and differential amplifiers: The matched characteristics make it suitable for these types of circuits.

Q & A

  1. What is the package type of the BCM847DS/DG/B2 115?
    The BCM847DS/DG/B2 115 is packaged in a SOT457 (TSOP6) Surface-Mounted Device (SMD) plastic package.
  2. What is the maximum collector-emitter voltage (VCEO) of the BCM847DS/DG/B2 115?
    The maximum collector-emitter voltage (VCEO) is 45V.
  3. What is the maximum collector current (IC) of the BCM847DS/DG/B2 115?
    The maximum collector current (IC) is 100mA.
  4. Is the BCM847DS/DG/B2 115 AEC-Q101 qualified?
    Yes, the BCM847DS/DG/B2 115 is AEC-Q101 qualified.
  5. What are the typical applications of the BCM847DS/DG/B2 115?
    The typical applications include automotive systems, general-purpose electronics, current mirrors, and differential amplifiers.
  6. What is the size of the SOT457 package?
    The size of the SOT457 package is 2.9 x 1.5 x 1 mm.
  7. Are the transistors internally isolated?
    Yes, the transistors in the BCM847DS/DG/B2 115 are internally fully isolated.
  8. What is the minimum current gain (hFE) of the BCM847DS/DG/B2 115?
    The minimum current gain (hFE) is 200.
  9. What is the maximum base-emitter voltage difference (VBE1 / VBE2)?
    The maximum base-emitter voltage difference is 2 mV.
  10. Can the BCM847DS/DG/B2 115 be used as a drop-in replacement for standard double transistors?
    Yes, it can be used as a drop-in replacement for standard double transistors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCM847DS/DG/B2115 BCM847DS/DG/B2 115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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