Overview
The BC80725MTFNL is a PNP epitaxial silicon transistor produced by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for general-purpose applications, including switching and amplifier stages. It is part of the BC807 series, which offers various current gain classifications, making it versatile for different use cases.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VCEO | - | - | -45 | V |
| Collector-Base Breakdown Voltage | VCBO | - | - | -50 | V |
| Emitter-Base Breakdown Voltage | VEBO | - | - | -6.0 | V |
| Collector Current - Continuous | IC | - | - | -500 | mA |
| DC Current Gain (IC = -100 mA, VCE = -1 V) | hFE | 160 | 250 | 400 | - |
| Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) | VCE(sat) | - | - | -0.7 | V |
| Base-Emitter On Voltage (IC = -500 mA, VCE = -1 V) | VBE(on) | - | - | -1.2 | V |
| Current Gain Bandwidth Product (IC = -10 mA, VCE = -5 V, f = 100 MHz) | fT | - | - | 100 | MHz |
| Output Capacitance (VCB = -10 V, f = 1 MHz) | Cob | - | - | 10 | pF |
| Junction and Storage Temperature | TJ, Tstg | -55 | - | +150 | °C |
Key Features
- Suitable for switching and amplifier applications.
- Complement to BC817 / BC818 transistors.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Available in SOT-23 3L package with tape and reel packing method.
Applications
- AF-driver stages and low power output stages.
- General-purpose switching and amplifier circuits.
- Automotive and industrial control systems.
- Consumer electronics requiring reliable and efficient transistor performance.
Q & A
- What is the collector-emitter breakdown voltage of the BC80725MTFNL transistor?
The collector-emitter breakdown voltage (VCEO) is -45 V.
- What is the maximum collector current for the BC80725MTFNL transistor?
The maximum collector current (IC) is -500 mA.
- What is the typical DC current gain (hFE) of the BC80725MTFNL transistor?
The typical DC current gain (hFE) is 250, with a range of 160 to 400.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC80725MTFNL transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.
- Is the BC80725MTFNL transistor RoHS compliant?
- What is the junction and storage temperature range for the BC80725MTFNL transistor?
The junction and storage temperature range is -55°C to +150°C.
- What package type is the BC80725MTFNL transistor available in?
The BC80725MTFNL transistor is available in the SOT-23 3L package.
- What are some common applications for the BC80725MTFNL transistor?
- Is the BC80725MTFNL transistor AEC-Q101 qualified?
- What is the current gain bandwidth product (fT) of the BC80725MTFNL transistor?
