BC80725MTFNL
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Fairchild Semiconductor BC80725MTFNL

Manufacturer No:
BC80725MTFNL
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC80725MTFNL is a PNP epitaxial silicon transistor produced by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for general-purpose applications, including switching and amplifier stages. It is part of the BC807 series, which offers various current gain classifications, making it versatile for different use cases.

Key Specifications

Parameter Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage VCEO - - -45 V
Collector-Base Breakdown Voltage VCBO - - -50 V
Emitter-Base Breakdown Voltage VEBO - - -6.0 V
Collector Current - Continuous IC - - -500 mA
DC Current Gain (IC = -100 mA, VCE = -1 V) hFE 160 250 400 -
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0.7 V
Base-Emitter On Voltage (IC = -500 mA, VCE = -1 V) VBE(on) - - -1.2 V
Current Gain Bandwidth Product (IC = -10 mA, VCE = -5 V, f = 100 MHz) fT - - 100 MHz
Output Capacitance (VCB = -10 V, f = 1 MHz) Cob - - 10 pF
Junction and Storage Temperature TJ, Tstg -55 - +150 °C

Key Features

  • Suitable for switching and amplifier applications.
  • Complement to BC817 / BC818 transistors.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Available in SOT-23 3L package with tape and reel packing method.

Applications

  • AF-driver stages and low power output stages.
  • General-purpose switching and amplifier circuits.
  • Automotive and industrial control systems.
  • Consumer electronics requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC80725MTFNL transistor?

    The collector-emitter breakdown voltage (VCEO) is -45 V.

  2. What is the maximum collector current for the BC80725MTFNL transistor?

    The maximum collector current (IC) is -500 mA.

  3. What is the typical DC current gain (hFE) of the BC80725MTFNL transistor?

    The typical DC current gain (hFE) is 250, with a range of 160 to 400.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the BC80725MTFNL transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.

  5. Is the BC80725MTFNL transistor RoHS compliant?
  6. What is the junction and storage temperature range for the BC80725MTFNL transistor?

    The junction and storage temperature range is -55°C to +150°C.

  7. What package type is the BC80725MTFNL transistor available in?

    The BC80725MTFNL transistor is available in the SOT-23 3L package.

  8. What are some common applications for the BC80725MTFNL transistor?
  9. Is the BC80725MTFNL transistor AEC-Q101 qualified?
  10. What is the current gain bandwidth product (fT) of the BC80725MTFNL transistor?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):800mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:310mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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