BC857BS-13-F
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Diodes Incorporated BC857BS-13-F

Manufacturer No:
BC857BS-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 45V 0.1A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BS-13-F is a dual PNP general-purpose transistor produced by Diodes Incorporated. It is packaged in a small SOT363 (SC-88) surface-mount device (SMD) plastic package, making it ideal for applications where space is limited. This transistor is well-suited for automated insertion and is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability.

Key Specifications

Parameter Value Unit
Transistor Type PNP x2 (Dual)
Collector-Emitter Voltage (VCEO) 45 V
Collector Current (IC) 100 mA
Power Dissipation (PD) 200 mW
DC Current Gain (hFE) 220 (min) @ 2mA, 5V
Collector-Emitter Saturation Voltage (VCE(sat)) 400mV @ 5mA, 100mA
Frequency - Transition (fT) 100 MHz
Operating and Storage Temperature Range -55°C to +150°C
Package SOT363 (SC-88)
Mounting Type Surface Mount

Key Features

  • Ultra-small SOT363 (SC-88) surface-mount package, ideal for space-constrained applications.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free.
  • Qualified to AEC-Q101 standards for high reliability and PPAP capable.
  • Suitable for automated insertion.
  • Ideally suited for switching and AF amplifier applications).

Applications

  • Switching circuits: The BC857BS-13-F can be used in various switching applications due to its low saturation voltage and high current gain).
  • Audio Frequency (AF) Amplifiers: Suitable for use in AF amplifier circuits where low noise and high gain are required).
  • Automotive Electronics: Qualified to AEC-Q101 standards, making it suitable for use in automotive applications).
  • General-Purpose Amplification: Can be used in a variety of general-purpose amplification circuits where a dual PNP transistor is needed).

Q & A

  1. What is the maximum collector-emitter voltage of the BC857BS-13-F? The maximum collector-emitter voltage (VCEO) is 45V).
  2. What is the maximum collector current of the BC857BS-13-F? The maximum collector current (IC) is 100mA).
  3. What is the power dissipation of the BC857BS-13-F? The power dissipation (PD) is 200mW).
  4. What is the DC current gain (hFE) of the BC857BS-13-F? The minimum DC current gain (hFE) is 220 at 2mA and 5V).
  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BC857BS-13-F? The collector-emitter saturation voltage (VCE(sat)) is 400mV at 5mA and 100mA).
  6. What is the frequency - transition (fT) of the BC857BS-13-F? The frequency - transition (fT) is 100MHz).
  7. What is the operating and storage temperature range of the BC857BS-13-F? The operating and storage temperature range is -55°C to +150°C).
  8. What package type is the BC857BS-13-F available in? The BC857BS-13-F is packaged in a SOT363 (SC-88) surface-mount device (SMD) package).
  9. Is the BC857BS-13-F RoHS compliant? Yes, the BC857BS-13-F is totally lead-free and fully RoHS compliant).
  10. What are some typical applications of the BC857BS-13-F? Typical applications include switching circuits, AF amplifiers, automotive electronics, and general-purpose amplification).

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:200mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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