Overview
The PMBT3906VS,115 is a dual PNP bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is designed for general-purpose and low VCESAT applications, making it suitable for a wide range of electronic circuits. It is packaged in an ultra-small and flat lead Surface-Mounted Device (SMD) SOT666 package, which is ideal for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (V(br)ceo) | -40V |
| DC Collector Current (Ic) | -200mA |
| Power Dissipation (Pd) | 240mW |
| DC Current Gain (hFE) | 100hFE |
| Transistor Case Style | SOT-666 |
| No. of Pins | 6 Pins |
| Operating Temperature Range | -55°C to +150°C |
| Transition Frequency (ft) | 250MHz |
Key Features
- Ultra-small SOT666 package: Ideal for space-constrained designs and high-density applications.
- Dual PNP configuration: Provides flexibility in circuit design and can be used in a variety of switching and amplification applications.
- High collector emitter voltage: Rated at -40V, making it suitable for applications requiring higher voltage handling.
- Low power dissipation: With a power dissipation of 240mW, it is efficient for low-power applications.
- High transition frequency: At 250MHz, it supports high-frequency operations.
- Broad operating temperature range: From -55°C to +150°C, making it suitable for use in harsh environments.
Applications
- General-purpose switching and amplification: Suitable for a wide range of electronic circuits where dual PNP transistors are required.
- Automotive applications: Compliant with AEC-Q101 standards, making it reliable for use in automotive systems.
- Consumer electronics: Ideal for use in consumer electronic devices due to its small footprint and low power consumption.
- Industrial control systems: Can be used in various industrial control and automation systems due to its robust specifications.
Q & A
- What is the transistor type of the PMBT3906VS,115?
The PMBT3906VS,115 is a dual PNP bipolar junction transistor (BJT).
- What is the collector emitter voltage rating of the PMBT3906VS,115?
The collector emitter voltage (V(br)ceo) is rated at -40V.
- What is the maximum DC collector current of the PMBT3906VS,115?
The maximum DC collector current (Ic) is -200mA.
- What is the power dissipation of the PMBT3906VS,115?
The power dissipation (Pd) is 240mW.
- What is the operating temperature range of the PMBT3906VS,115?
The operating temperature range is from -55°C to +150°C.
- Is the PMBT3906VS,115 RoHS compliant?
No, the PMBT3906VS,115 has not been flagged as RoHS compliant.
- What package type is used for the PMBT3906VS,115?
The PMBT3906VS,115 is packaged in an ultra-small and flat lead SOT666 Surface-Mounted Device (SMD) package.
- What is the transition frequency of the PMBT3906VS,115?
The transition frequency (ft) is 250MHz.
- Where can I find additional datasheets and documents for the PMBT3906VS,115?
Additional datasheets, footprints, and schematics can be found on the part details page of authorized distributors or on Nexperia's official website.
- Which distributors have stock available for the PMBT3906VS,115?
Authorized distributors including Avnet Asia, Chip One Stop, EBV Elektronik, Avnet America, and Farnell have stock available or on a lead time for the PMBT3906VS,115.
