SBC846BPDW1T2G
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onsemi SBC846BPDW1T2G

Manufacturer No:
SBC846BPDW1T2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 65V 0.1A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBC846BPDW1T2G is a dual general-purpose transistor produced by onsemi. It is part of the BC846BPDW1, BC847BPDW1, and BC848CPDW1 series, designed for general-purpose amplifier applications. These transistors are housed in the SOT-363/SC-88 package, which is suitable for low-power surface mount applications. The SBC846BPDW1T2G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, these devices are Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage (NPN) VCEO 65 (BC846), 45 (BC847), 30 (BC848) V
Collector-Base Voltage (NPN) VCBO 80 (BC846), 50 (BC847), 30 (BC848) V
Emitter-Base Voltage (NPN) VEBO 6.0 V
Collector Current - Continuous (NPN) IC 200 mA mA
Total Device Dissipation Per Device (FR-5 Board) PD 380 mW (TA = 25°C), 250 mW (Derate above 25°C) mW
Thermal Resistance, Junction-to-Ambient RJA 328 °C/W °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C °C
DC Current Gain (NPN) hFE 200 (BC846), 420 (BC847), 150 (BC848) -
Collector-Emitter Saturation Voltage (NPN) VCE(sat) 0.024 (BC846), 0.25 (BC847), 0.1 (BC848) V
Base-Emitter Saturation Voltage (NPN) VBE(sat) 0.7 (BC846), 0.9 (BC847), 0.7 (BC848) V

Key Features

  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
  • Pb-free, Halogen Free/BFR Free and RoHS Compliant.
  • Housed in SOT-363/SC-88 package suitable for low-power surface mount applications.
  • High DC Current Gain (hFE) for efficient amplifier performance.
  • Low Collector-Emitter Saturation Voltage (VCE(sat)) and Base-Emitter Saturation Voltage (VBE(sat)).
  • Wide Junction and Storage Temperature Range (-55 to +150 °C).

Applications

The SBC846BPDW1T2G is designed for general-purpose amplifier applications, making it suitable for a variety of uses such as:

  • Automotive electronics due to its AEC-Q101 qualification and PPAP capability.
  • Low-power surface mount applications in consumer electronics.
  • Industrial control systems requiring reliable and efficient transistor performance.
  • Audio and signal processing circuits where high current gain and low saturation voltages are essential.

Q & A

  1. What is the SBC846BPDW1T2G used for?

    The SBC846BPDW1T2G is used for general-purpose amplifier applications.

  2. What package type does the SBC846BPDW1T2G come in?

    The SBC846BPDW1T2G is housed in the SOT-363/SC-88 package.

  3. Is the SBC846BPDW1T2G RoHS compliant?
  4. What are the maximum collector-emitter voltages for the BC846, BC847, and BC848 series?

    The maximum collector-emitter voltages are 65V for BC846, 45V for BC847, and 30V for BC848.

  5. What is the thermal resistance, junction-to-ambient for the SBC846BPDW1T2G?

    The thermal resistance, junction-to-ambient is 328 °C/W.

  6. What is the junction and storage temperature range for the SBC846BPDW1T2G?

    The junction and storage temperature range is -55 to +150 °C.

  7. What are the typical DC current gains for the BC846, BC847, and BC848 series?

    The typical DC current gains are 200 for BC846, 420 for BC847, and 150 for BC848.

  8. What are some common applications of the SBC846BPDW1T2G?

    Common applications include automotive electronics, low-power surface mount applications in consumer electronics, industrial control systems, and audio and signal processing circuits.

  9. Is the SBC846BPDW1T2G suitable for automotive applications?
  10. What is the collector current - continuous rating for the SBC846BPDW1T2G?

    The collector current - continuous rating is 200 mA.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:380mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Same Series
SBC847BPDW1T1G
SBC847BPDW1T1G
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BC847BPDW1T2G
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TRANS NPN/PNP 45V 0.1A SOT363
BC846BPDW1T1G
BC846BPDW1T1G
TRAN NPN/PNP 65V 0.1A SC88/SC70
BC848CPDW1T1G
BC848CPDW1T1G
TRANS NPN/PNP 30V 0.1A SOT363
BC847BPDW1T3G
BC847BPDW1T3G
TRAN NPN/PNP 45V 0.1A SC88/SC70
SBC846BPDW1T1G
SBC846BPDW1T1G
TRANS NPN/PNP 65V 0.1A SOT363
SBC847BPDW1T3G
SBC847BPDW1T3G
TRAN NPN/PNP 45V 0.1A SC88/SC70

Similar Products

Part Number SBC846BPDW1T2G SBC846BPDW1T1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN, PNP NPN, PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 65V 65V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 380mW 380mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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