Overview
The SBC846BPDW1T2G is a dual general-purpose transistor produced by onsemi. It is part of the BC846BPDW1, BC847BPDW1, and BC848CPDW1 series, designed for general-purpose amplifier applications. These transistors are housed in the SOT-363/SC-88 package, which is suitable for low-power surface mount applications. The SBC846BPDW1T2G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, these devices are Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage (NPN) | VCEO | 65 (BC846), 45 (BC847), 30 (BC848) | V |
Collector-Base Voltage (NPN) | VCBO | 80 (BC846), 50 (BC847), 30 (BC848) | V |
Emitter-Base Voltage (NPN) | VEBO | 6.0 | V |
Collector Current - Continuous (NPN) | IC | 200 mA | mA |
Total Device Dissipation Per Device (FR-5 Board) | PD | 380 mW (TA = 25°C), 250 mW (Derate above 25°C) | mW |
Thermal Resistance, Junction-to-Ambient | RJA | 328 °C/W | °C/W |
Junction and Storage Temperature | TJ, Tstg | -55 to +150 °C | °C |
DC Current Gain (NPN) | hFE | 200 (BC846), 420 (BC847), 150 (BC848) | - |
Collector-Emitter Saturation Voltage (NPN) | VCE(sat) | 0.024 (BC846), 0.25 (BC847), 0.1 (BC848) | V |
Base-Emitter Saturation Voltage (NPN) | VBE(sat) | 0.7 (BC846), 0.9 (BC847), 0.7 (BC848) | V |
Key Features
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
- Pb-free, Halogen Free/BFR Free and RoHS Compliant.
- Housed in SOT-363/SC-88 package suitable for low-power surface mount applications.
- High DC Current Gain (hFE) for efficient amplifier performance.
- Low Collector-Emitter Saturation Voltage (VCE(sat)) and Base-Emitter Saturation Voltage (VBE(sat)).
- Wide Junction and Storage Temperature Range (-55 to +150 °C).
Applications
The SBC846BPDW1T2G is designed for general-purpose amplifier applications, making it suitable for a variety of uses such as:
- Automotive electronics due to its AEC-Q101 qualification and PPAP capability.
- Low-power surface mount applications in consumer electronics.
- Industrial control systems requiring reliable and efficient transistor performance.
- Audio and signal processing circuits where high current gain and low saturation voltages are essential.
Q & A
- What is the SBC846BPDW1T2G used for?
The SBC846BPDW1T2G is used for general-purpose amplifier applications.
- What package type does the SBC846BPDW1T2G come in?
The SBC846BPDW1T2G is housed in the SOT-363/SC-88 package.
- Is the SBC846BPDW1T2G RoHS compliant?
- What are the maximum collector-emitter voltages for the BC846, BC847, and BC848 series?
The maximum collector-emitter voltages are 65V for BC846, 45V for BC847, and 30V for BC848.
- What is the thermal resistance, junction-to-ambient for the SBC846BPDW1T2G?
The thermal resistance, junction-to-ambient is 328 °C/W.
- What is the junction and storage temperature range for the SBC846BPDW1T2G?
The junction and storage temperature range is -55 to +150 °C.
- What are the typical DC current gains for the BC846, BC847, and BC848 series?
The typical DC current gains are 200 for BC846, 420 for BC847, and 150 for BC848.
- What are some common applications of the SBC846BPDW1T2G?
Common applications include automotive electronics, low-power surface mount applications in consumer electronics, industrial control systems, and audio and signal processing circuits.
- Is the SBC846BPDW1T2G suitable for automotive applications?
- What is the collector current - continuous rating for the SBC846BPDW1T2G?
The collector current - continuous rating is 200 mA.