Overview
The BC847BPDW1T2G is a dual NPN/PNP transistor produced by onsemi, designed for general-purpose amplifier applications. These transistors are housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, the BC847BPDW1T2G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Breakdown Voltage (VBRCBO) | 50 | V |
| Collector-Emitter Breakdown Voltage (VBRCEO) | 45 | V |
| Emitter-Base Breakdown Voltage (VBREBO) | 6.0 | V |
| Collector Current (IC) | 200 | mA |
| DC Current Gain (hFE) | 200 - 420 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.25 - 0.6 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 - 0.9 | V |
| Current-Gain Bandwidth Product (fT) | 100 | MHz |
| Output Capacitance (Cobo) | 4.5 | pF |
| Operating Temperature Range | -55°C to +125°C | - |
Key Features
- General-purpose amplifier applications
- Dual NPN/PNP configuration in SOT-363/SC-88 package
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- Low power surface mount design
- High current gain and low saturation voltages
Applications
The BC847BPDW1T2G is suitable for a variety of applications, including:
- General-purpose amplifier circuits
- Automotive electronics requiring AEC-Q101 qualification
- Consumer electronics where low power and small footprint are essential
- Industrial control systems and automation
- Audio and signal processing circuits
Q & A
- What is the package type of the BC847BPDW1T2G transistor?
The BC847BPDW1T2G is housed in the SOT-363/SC-88 package. - What are the key applications of the BC847BPDW1T2G transistor?
The BC847BPDW1T2G is used in general-purpose amplifier applications, automotive electronics, consumer electronics, industrial control systems, and audio/signal processing circuits. - Is the BC847BPDW1T2G transistor RoHS compliant?
Yes, the BC847BPDW1T2G is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the maximum collector current of the BC847BPDW1T2G transistor?
The maximum collector current is 200 mA. - What is the typical DC current gain (hFE) of the BC847BPDW1T2G transistor?
The typical DC current gain (hFE) ranges from 200 to 420. - What is the operating temperature range of the BC847BPDW1T2G transistor?
The operating temperature range is -55°C to +125°C. - Is the BC847BPDW1T2G transistor AEC-Q101 qualified?
Yes, the BC847BPDW1T2G is AEC-Q101 qualified and PPAP capable. - What is the collector-emitter breakdown voltage (VBRCEO) of the BC847BPDW1T2G transistor?
The collector-emitter breakdown voltage (VBRCEO) is 45 V. - What is the current-gain bandwidth product (fT) of the BC847BPDW1T2G transistor?
The current-gain bandwidth product (fT) is 100 MHz. - What is the output capacitance (Cobo) of the BC847BPDW1T2G transistor?
The output capacitance (Cobo) is 4.5 pF.[
