Overview
The BC847BPDW1T3G is a bipolar junction transistor (BJT) array produced by onsemi, designed for general-purpose amplifier applications. This device is co-packaged with both NPN and PNP transistors, making it versatile for a wide range of electronic circuits. It is housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. The BC847BPDW1T3G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
Parameter | Value |
---|---|
Package Type | SOT-363/SC-88 |
Collector Current (IC) | 100 mA |
Collector-Emitter Voltage (VCE) | 45 V |
Collector-Emitter Saturation Voltage (VCE(sat)) | 0.6 V (IC = 10 mA, IB = 0.5 mA) |
Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 V (IC = 10 mA, IB = 0.5 mA) |
DC Current Gain (hFE) | 200 - 475 |
Current-Gain Bandwidth Product (fT) | 100 MHz |
Output Capacitance (Cobo) | 4.5 pF (VCB = 10 V, f = 1.0 MHz) |
Operating Temperature Range | -55°C to 150°C |
Key Features
- Co-packaged NPN and PNP bipolar junction transistors for complementary operation.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.6 V for efficient switching and amplification.
- High DC current gain (hFE) ranging from 200 to 475, ensuring reliable amplification.
- High current-gain bandwidth product (fT) of 100 MHz, suitable for high-frequency applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it environmentally friendly and compliant with regulatory standards.
- AECQ101 qualified and PPAP capable, suitable for automotive and other demanding applications.
Applications
- General-purpose amplifier circuits.
- Switching circuits requiring low VCE(sat).
- High-frequency applications such as audio amplifiers and RF circuits.
- Automotive electronics due to AECQ101 qualification and PPAP capability.
- Surface mount applications where space is limited.
Q & A
- What is the package type of the BC847BPDW1T3G?
The BC847BPDW1T3G is housed in the SOT-363/SC-88 package.
- What is the maximum collector current (IC) of the BC847BPDW1T3G?
The maximum collector current (IC) is 100 mA.
- What is the collector-emitter voltage (VCE) rating of the BC847BPDW1T3G?
The collector-emitter voltage (VCE) rating is 45 V.
- What is the typical collector-emitter saturation voltage (VCE(sat)) of the BC847BPDW1T3G?
The typical collector-emitter saturation voltage (VCE(sat)) is 0.6 V.
- What is the DC current gain (hFE) range of the BC847BPDW1T3G?
The DC current gain (hFE) ranges from 200 to 475.
- Is the BC847BPDW1T3G RoHS compliant?
- What is the current-gain bandwidth product (fT) of the BC847BPDW1T3G?
The current-gain bandwidth product (fT) is 100 MHz.
- What are some common applications of the BC847BPDW1T3G?
- Is the BC847BPDW1T3G suitable for automotive applications?
- What is the operating temperature range of the BC847BPDW1T3G?