Overview
The BC847BDW1T3G is a Dual NPN Bipolar Transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is suitable for a wide range of electronic circuits requiring reliable and efficient amplification.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | - | - | 45 | V |
| Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) | V(BR)CES | - | - | 50 | V |
| Collector-Base Breakdown Voltage (IC = 10 μA) | V(BR)CBO | - | - | 50 | V |
| Emitter-Base Breakdown Voltage (IE = 1.0 μA) | V(BR)EBO | - | - | 6.0 | V |
| Collector Cutoff Current (VCB = 30 V, TA = 150°C) | ICBO | - | - | 5.0 nA | A |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 200 | - | 450 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 | V |
| Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) | VBE(on) | - | - | 0.66 | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 4.5 | pF |
Key Features
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
- SOT-363/SC-88 Package: Designed for low power surface mount applications, offering compact size and ease of integration.
- AECQ101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Low VCE(sat): Collector-Emitter Saturation Voltage of 0.25 V, which is beneficial for low power consumption and high efficiency.
- High DC Current Gain: hFE ranges from 200 to 450, providing reliable amplification in various circuits.
Applications
The BC847BDW1T3G is versatile and can be used in a variety of applications, including:
- General Purpose Amplifiers: Suitable for amplifying signals in audio, video, and other electronic circuits.
- Automotive Electronics: AECQ101 qualification makes it suitable for use in automotive systems.
- Consumer Electronics: Can be used in devices such as radios, TVs, and other consumer electronic products.
- Industrial Control Systems: Reliable operation in industrial environments for control and monitoring systems.
Q & A
- What is the package type of the BC847BDW1T3G transistor?
The BC847BDW1T3G is housed in the SOT-363/SC-88 package. - Is the BC847BDW1T3G RoHS compliant?
Yes, the BC847BDW1T3G is Pb-Free, Halogen Free/BFR Free and RoHS Compliant. - What is the maximum collector-emitter breakdown voltage of the BC847BDW1T3G?
The maximum collector-emitter breakdown voltage is 45 V. - What is the typical DC current gain (hFE) of the BC847BDW1T3G?
The typical DC current gain (hFE) ranges from 200 to 450. - What is the collector-emitter saturation voltage (VCE(sat)) of the BC847BDW1T3G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V. - Is the BC847BDW1T3G suitable for automotive applications?
Yes, it is AECQ101 qualified and PPAP capable, making it suitable for automotive and other specific applications. - What is the output capacitance of the BC847BDW1T3G?
The output capacitance (Cobo) is 4.5 pF. - What is the current-gain bandwidth product (fT) of the BC847BDW1T3G?
The current-gain bandwidth product (fT) is 100 MHz. - What is the base-emitter saturation voltage (VBE(sat)) of the BC847BDW1T3G?
The base-emitter saturation voltage (VBE(sat)) is 0.7 V. - What is the maximum collector cutoff current (ICBO) of the BC847BDW1T3G?
The maximum collector cutoff current (ICBO) is 5.0 nA.
