NST857BDP6T5G
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onsemi NST857BDP6T5G

Manufacturer No:
NST857BDP6T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 45V 0.1A SOT963
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NST857BDP6T5G is a dual general-purpose transistor manufactured by ON Semiconductor. This device is a variant of the popular SOT-23/SOT-323/SOT-563 three-leaded transistors and is designed for general-purpose amplifier applications. It is known for its reliability and versatility in various electronic circuits.

Key Specifications

ParameterValue
Package TypeSOT-563 (SC-70-6)
Number of Transistors2
Transistor TypeNPN
Collector-Base Voltage (Vcbo)40 V
Collector-Emitter Voltage (Vceo)40 V
Emitter-Base Voltage (Vebo)6 V
Collector Current (Ic)500 mA
Power Dissipation (Pd)250 mW
Operating Temperature Range-55°C to 150°C
RoHS ComplianceYes

Key Features

  • Dual NPN transistors in a single SOT-563 package, enhancing space efficiency and reducing component count.
  • High collector current of 500 mA, suitable for a wide range of applications.
  • Low power dissipation of 250 mW, making it energy-efficient.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in diverse environments.
  • RoHS compliant, meeting environmental standards.

Applications

The NST857BDP6T5G is versatile and can be used in various general-purpose amplifier applications, including audio amplifiers, switching circuits, and other electronic devices that require reliable and efficient transistor performance.

Q & A

  1. What is the package type of the NST857BDP6T5G transistor?
    The NST857BDP6T5G transistor comes in a SOT-563 (SC-70-6) package.
  2. How many transistors are included in the NST857BDP6T5G?
    The device includes 2 NPN transistors.
  3. What is the maximum collector current of the NST857BDP6T5G?
    The maximum collector current is 500 mA.
  4. What is the operating temperature range of the NST857BDP6T5G?
    The operating temperature range is from -55°C to 150°C.
  5. Is the NST857BDP6T5G RoHS compliant?
    Yes, the NST857BDP6T5G is RoHS compliant.
  6. What is the typical application of the NST857BDP6T5G?
    The typical application includes general-purpose amplifier circuits, audio amplifiers, and switching circuits.
  7. What is the maximum collector-base voltage of the NST857BDP6T5G?
    The maximum collector-base voltage (Vcbo) is 40 V.
  8. What is the maximum collector-emitter voltage of the NST857BDP6T5G?
    The maximum collector-emitter voltage (Vceo) is 40 V.
  9. What is the maximum emitter-base voltage of the NST857BDP6T5G?
    The maximum emitter-base voltage (Vebo) is 6 V.
  10. What is the power dissipation of the NST857BDP6T5G?
    The power dissipation (Pd) is 250 mW.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:700mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:350mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-963
Supplier Device Package:SOT-963
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Similar Products

Part Number NST857BDP6T5G NST847BDP6T5G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 350mW 350mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-963 SOT-963
Supplier Device Package SOT-963 SOT-963

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