Overview
The HN1B01FDW1T1G is a complementary dual general-purpose amplifier transistor produced by onsemi. This device is designed to provide high voltage and high current capabilities, making it suitable for a variety of applications. It features a PNP and an NPN transistor in a single SC-74 package, which is Pb-free, halogen-free, and RoHS compliant. The device is AEC-Q101 qualified and PPAP capable, making it reliable for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Base Voltage | V(BR)CBO | - | 60 | Vdc |
| Collector-Emitter Voltage | V(BR)CEO | - | 50 | Vdc |
| Emitter-Base Voltage | V(BR)EBO | - | 7.0 | Vdc |
| Collector Current - Continuous | IC | - | 200 | mAdc |
| Power Dissipation | PD | - | 380 | mW |
| Junction Temperature | TJ | - | 150 | °C |
| Storage Temperature | Tstg | -55 | 150 | °C |
| DC Current Gain (hFE) | hFE | 200 | 400 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.3 (PNP), 0.25 (NPN) | Vdc |
Key Features
- High Voltage and High Current: VCEO = 50 V, IC = 200 mA
- High hFE: hFE = 200-400
- Moisture Sensitivity Level: 1
- ESD Rating: Human Body Model = 3A, Machine Model = C
- AEC-Q101 Qualified and PPAP Capable for automotive and other demanding applications
- Pb-free, Halogen-free/BFR-free, and RoHS Compliant
Applications
The HN1B01FDW1T1G is suitable for various applications including:
- Automotive systems
- General-purpose amplification
- Switching circuits
- Audio and video equipment
- Industrial control systems
Q & A
- What is the maximum collector-emitter voltage for the HN1B01FDW1T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is 200 mA.
- Is the HN1B01FDW1T1G RoHS compliant?
- What are the ESD ratings for this device?
The ESD ratings are Human Body Model = 3A and Machine Model = C.
- Is the HN1B01FDW1T1G suitable for automotive applications?
- What is the junction temperature range for this transistor?
The junction temperature (TJ) range is up to 150°C.
- What is the typical DC current gain (hFE) for the HN1B01FDW1T1G?
The typical DC current gain (hFE) is between 200 and 400.
- What is the collector-emitter saturation voltage for this device?
The collector-emitter saturation voltage (VCE(sat)) is up to 0.3 Vdc for PNP and 0.25 Vdc for NPN.
- What is the storage temperature range for the HN1B01FDW1T1G?
The storage temperature (Tstg) range is from -55°C to 150°C.
- What package type is the HN1B01FDW1T1G available in?
The device is available in an SC-74 package.
