Overview
The BC846SH6327XTSA1 is an NPN Silicon AF Transistor Array produced by Infineon Technologies. This component is part of the BC846S series, which is designed for audio frequency (AF) input stages and driver applications. The transistor array features two galvanically isolated NPN transistors in a single package, making it ideal for reducing the number of components and board space in electronic designs.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 65 | V |
| VCB0 (Collector-Base Breakdown Voltage) | IC = 100 µA; IE = 0 A; Tamb = 25 °C | - | - | 80 | V |
| VEB0 (Emitter-Base Breakdown Voltage) | IC = 0 A; IE = 100 µA; Tamb = 25 °C | - | - | 6 | V |
| IC (Collector Current) | - | - | - | 100 | mA |
| ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 200 | mA |
| hFE (DC Current Gain) | VCE = 5 V; IC = 2 mA; Tamb = 25 °C | 110 | - | - | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 100 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | - | - | 300 | mV |
| Tj (Junction Temperature) | - | - | - | 150 | °C |
Key Features
- Two galvanically isolated NPN transistors in a single SOT363 (SC-88) plastic six-lead package, reducing the number of components and board space.
- High current gain (hFE) of 110.
- Low collector-emitter saturation voltage (VCEsat) of up to 300 mV.
- No mutual interference between the transistors.
- Pb-free (RoHS compliant) package.
- Qualified according to AEC Q101.
Applications
- Audio frequency (AF) input stages.
- Driver applications.
- General purpose switching and small signal amplification.
Q & A
- What is the BC846SH6327XTSA1 used for?
The BC846SH6327XTSA1 is used for audio frequency (AF) input stages and driver applications.
- How many transistors are in the BC846SH6327XTSA1 package?
The package contains two galvanically isolated NPN transistors.
- What is the maximum collector-emitter voltage (VCEO) for the BC846SH6327XTSA1?
The maximum collector-emitter voltage (VCEO) is 65 V.
- What is the typical DC current gain (hFE) of the BC846SH6327XTSA1?
The typical DC current gain (hFE) is 110.
- Is the BC846SH6327XTSA1 RoHS compliant?
- What is the maximum junction temperature (Tj) for the BC846SH6327XTSA1?
The maximum junction temperature (Tj) is 150 °C.
- What package type does the BC846SH6327XTSA1 use?
The BC846SH6327XTSA1 uses a SOT363 (SC-88) plastic six-lead package.
- What are the benefits of having two transistors in one package?
Having two transistors in one package reduces the number of components and board space, and there is no mutual interference between the transistors.
- Is the BC846SH6327XTSA1 qualified according to any automotive standards?
- What is the maximum collector current (IC) for the BC846SH6327XTSA1?
The maximum collector current (IC) is 100 mA.
