Overview
The BC857SH6433XTMA1 is a PNP silicon transistor array produced by Infineon Technologies. This component is designed for various electronic applications, particularly in audio frequency (AF) input stages and driver circuits. It is known for its high current gain and low collector-emitter saturation voltage, making it suitable for a range of electronic designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCEO | 45 | V |
| Collector-base voltage | VCBO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Peak collector current (tp ≤ 10 ms) | ICM | 200 | mA |
| Total power dissipation (TS ≤ 115 °C) | Ptot | 250 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65 to 150 | °C |
| DC current gain (IC = 10 mA, VCE = 5 V) | hFE | 200 to 630 | |
| Collector-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA) | VCEsat | 75 to 250 | mV |
| Base-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA) | VBEsat | 700 to 850 | mV |
| Transition frequency (IC = 20 mA, VCE = 5 V, f = 100 MHz) | fT | 250 | MHz |
Key Features
- High current gain (hFE) ranging from 200 to 630.
- Low collector-emitter saturation voltage (VCEsat) of 75 to 250 mV.
- Low base-emitter saturation voltage (VBEsat) of 700 to 850 mV.
- High transition frequency (fT) of 250 MHz.
- Compact SOT363 package.
Applications
The BC857SH6433XTMA1 is suitable for a variety of applications, including:
- Audio frequency (AF) input stages.
- Driver circuits.
- General-purpose amplification.
- Switching circuits.
Q & A
- What is the collector-emitter voltage rating of the BC857SH6433XTMA1?
The collector-emitter voltage rating is 45 V. - What is the maximum collector current for the BC857SH6433XTMA1?
The maximum collector current is 100 mA. - What is the peak collector current for the BC857SH6433XTMA1?
The peak collector current is 200 mA for pulse durations less than or equal to 10 ms. - What is the total power dissipation for the BC857SH6433XTMA1?
The total power dissipation is 250 mW at a temperature of up to 115 °C. - What is the junction temperature range for the BC857SH6433XTMA1?
The junction temperature range is up to 150 °C. - What is the storage temperature range for the BC857SH6433XTMA1?
The storage temperature range is from -65 °C to 150 °C. - What is the typical DC current gain of the BC857SH6433XTMA1?
The typical DC current gain (hFE) ranges from 200 to 630. - What is the collector-emitter saturation voltage of the BC857SH6433XTMA1?
The collector-emitter saturation voltage (VCEsat) ranges from 75 to 250 mV. - What is the transition frequency of the BC857SH6433XTMA1?
The transition frequency (fT) is 250 MHz. - In what package is the BC857SH6433XTMA1 available?
The BC857SH6433XTMA1 is available in a SOT363 package.
