BC857SH6794XTSA1
  • Share:

Infineon Technologies BC857SH6794XTSA1

Manufacturer No:
BC857SH6794XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 45V 0.1A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857SH6794XTSA1 is a dual PNP silicon AF (Audio Frequency) transistor array produced by Infineon Technologies. This component is designed for use in various electronic circuits, particularly in audio frequency applications and driver stages. It is characterized by its high current gain and low collector-emitter saturation voltage, making it suitable for a range of electronic devices.

Key Specifications

Parameter Value Unit
Type Trans GP BJT PNP
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC857
Power - Max 250mW
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz

Key Features

  • High Current Gain: The BC857SH6794XTSA1 has a high DC current gain (hFE) of up to 200 at 2mA and 5V, making it suitable for applications requiring high amplification.
  • Low Collector-Emitter Saturation Voltage: It features a low Vce saturation voltage of up to 650mV, which is beneficial for reducing power consumption and improving efficiency.
  • Dual PNP Transistors: This component includes two PNP transistors in a single package, which can simplify circuit design and reduce component count.
  • Surface Mount Package: The SOT-363 package is designed for surface mount technology, facilitating easy integration into modern PCB designs.
  • High Operating Temperature: The transistor can operate up to a junction temperature of 150°C, making it robust for various environmental conditions.

Applications

  • Audio Frequency Circuits: The BC857SH6794XTSA1 is particularly suited for audio frequency applications due to its high current gain and low noise characteristics.
  • Driver Stages: It is often used in driver stages for amplifiers and other electronic devices requiring high current gain and low saturation voltage.
  • Automotive Electronics: Given its robust specifications, it can be used in automotive electronics where reliability and high performance are critical.
  • General Purpose Amplification: This transistor array can be used in various general-purpose amplification circuits where dual PNP transistors are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BC857SH6794XTSA1?

    The maximum collector-emitter voltage (VCEO) is 45V.

  2. What is the package type of the BC857SH6794XTSA1?

    The package type is 6-VSSOP, SC-88, or SOT-363.

  3. What is the maximum collector current of the BC857SH6794XTSA1?

    The maximum collector current (Ic) is 100mA.

  4. What is the transition frequency of the BC857SH6794XTSA1?

    The transition frequency (fT) is 250MHz.

  5. Is the BC857SH6794XTSA1 suitable for high-temperature applications?

    Yes, it can operate up to a junction temperature of 150°C.

  6. What is the moisture sensitivity level of the BC857SH6794XTSA1?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  7. Can the BC857SH6794XTSA1 be used in life-support devices?

    No, it should not be used in life-support devices or systems without the express written approval of Infineon Technologies.

  8. What is the typical DC current gain of the BC857SH6794XTSA1?

    The typical DC current gain (hFE) is 200 at 2mA and 5V.

  9. Is the BC857SH6794XTSA1 still in production?

    No, the BC857SH6794XTSA1 is listed as obsolete.

  10. What is the maximum power dissipation of the BC857SH6794XTSA1?

    The maximum power dissipation is 250mW.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-PO
0 Remaining View Similar

In Stock

-
516

Please send RFQ , we will respond immediately.

Same Series
BC857SH6327XTSA1
BC857SH6327XTSA1
TRANS 2PNP 45V 0.1A SOT363-6
BC857SH6433XTMA1
BC857SH6433XTMA1
TRANS 2PNP 45V 0.1A SOT363
BC857SH6827XTSA1
BC857SH6827XTSA1
TRANS 2PNP 45V 0.1A SOT363
BC856SE6327BTSA1
BC856SE6327BTSA1
TRANS 2PNP 65V 0.1A SOT363
BC 856S E6433
BC 856S E6433
TRANS 2PNP 65V 0.1A SOT363
BC857SE6327BTSA1
BC857SE6327BTSA1
TRANS 2PNP 45V 0.1A SOT363
BC857SE6433HTMA1
BC857SE6433HTMA1
TRANS 2PNP 45V 0.1A SOT363
BC857SH6794XTSA1
BC857SH6794XTSA1
TRANS 2PNP 45V 0.1A SOT363

Related Product By Categories

PMBT3946YPN,115
PMBT3946YPN,115
Nexperia USA Inc.
TRANS NPN/PNP 40V 0.2A 6TSSOP
PMBT3906VS,115
PMBT3906VS,115
Nexperia USA Inc.
TRANS 2PNP 40V 0.2A SOT666
BC817RAZ
BC817RAZ
Nexperia USA Inc.
BC817RA/SOT1268/DFN1412-6
BC847BVN-7
BC847BVN-7
Diodes Incorporated
TRANS NPN/PNP 45V 0.1A SOT563
BC847BPDXV6T1G
BC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT563
BC857SE6327
BC857SE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC857BS-7-F
BC857BS-7-F
Diodes Incorporated
TRANS 2PNP 45V 0.1A SOT363
PBSS4160DSZ
PBSS4160DSZ
Nexperia USA Inc.
TRANS 2NPN 60V 1A SC-74
MBT3946DW1T1
MBT3946DW1T1
onsemi
TRANS DUAL GP 200MA 40V SOT363
BC847BV-7
BC847BV-7
Diodes Incorporated
TRANS 2NPN 45V 0.1A SOT563
MC1413PG
MC1413PG
onsemi
TRANS 7NPN DARL 50V 0.5A 16DIP
BC846BPNH-QX
BC846BPNH-QX
Nexperia USA Inc.
BC846BPNH-QX

Related Product By Brand

BAS4007WH6327XTSA1
BAS4007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BC 807-16 E6327
BC 807-16 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
IRFR120NTRPBF
IRFR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BSS83PE6327
BSS83PE6327
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
IRLML6402TRPBF-1
IRLML6402TRPBF-1
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I