BC847BWE6433HTMA1
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Infineon Technologies BC847BWE6433HTMA1

Manufacturer No:
BC847BWE6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BC847BWE6433HTMA1 is an NPN silicon bipolar transistor produced by Infineon Technologies. This transistor is part of the BC847B series, known for its high current gain and low noise characteristics, making it suitable for various audio frequency (AF) applications. Although the specific part number BC847BWE6433HTMA1 is currently obsolete and no longer manufactured, it remains relevant for understanding the capabilities and uses of the BC847B series.

Key Specifications

ParameterValue
Transistor TypeNPN
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Vce Saturation (Max) @ Ib, IcLow collector-emitter saturation voltage
PackageSOT-323
CompliancePb-free (RoHS compliant)

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types: BC857...-BC860...(PNP)
  • Qualified according to AEC Q101 (except BC847BL3)

Applications

The BC847BWE6433HTMA1 is suitable for AF input stages and driver applications. Its low noise and high current gain make it an ideal choice for audio and other low-frequency signal processing.

Q & A

  1. What is the transistor type of the BC847BWE6433HTMA1?
    The BC847BWE6433HTMA1 is an NPN silicon bipolar transistor.
  2. What is the maximum collector current of the BC847BWE6433HTMA1?
    The maximum collector current is 100 mA.
  3. What is the maximum collector-emitter breakdown voltage of the BC847BWE6433HTMA1?
    The maximum collector-emitter breakdown voltage is 45 V.
  4. Is the BC847BWE6433HTMA1 RoHS compliant?
    Yes, the BC847BWE6433HTMA1 is Pb-free and RoHS compliant.
  5. What are the complementary types of the BC847B?
    The complementary types are BC857...-BC860...(PNP).
  6. What are the typical applications of the BC847BWE6433HTMA1?
    The typical applications include AF input stages and driver applications.
  7. Is the BC847BWE6433HTMA1 still in production?
    No, the BC847BWE6433HTMA1 is currently obsolete and no longer manufactured.
  8. What package type does the BC847BWE6433HTMA1 use?
    The BC847BWE6433HTMA1 uses the SOT-323 package.
  9. Does the BC847BWE6433HTMA1 have low noise characteristics?
    Yes, it has low noise characteristics between 30 Hz and 15 kHz.
  10. Is the BC847BWE6433HTMA1 qualified according to AEC Q101?
    Yes, it is qualified according to AEC Q101, except for the BC847BL3 variant.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC847BWE6433HTMA1 BC847CWE6433HTMA1 BC847BE6433HTMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Not For New Designs
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323 PG-SOT323 PG-SOT23

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