BC850CE6359HTMA1
  • Share:

Infineon Technologies BC850CE6359HTMA1

Manufacturer No:
BC850CE6359HTMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BC850 - LOW NOISE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CE6359HTMA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for a variety of applications requiring high reliability and performance. It is part of Infineon's extensive portfolio of semiconductor solutions, known for their quality and innovative technology.

Key Specifications

ParameterValue
Transistor TypeNPN
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Vce Saturation (Max) @ Ib, IcSee datasheet for specific values
Frequency (Max)250 MHz
Power Dissipation (Max)330 mW

Key Features

  • High Frequency Capability: The BC850CE6359HTMA1 operates up to 250 MHz, making it suitable for high-frequency applications.
  • Low Power Consumption: With a maximum power dissipation of 330 mW, it is energy-efficient and suitable for battery-powered devices.
  • High Reliability: Manufactured by Infineon Technologies, this transistor is known for its high reliability and durability.
  • Compact Package: Available in a compact package, it is ideal for space-constrained designs.

Applications

  • General Purpose Amplification: Suitable for general-purpose amplification in various electronic circuits.
  • Switching Circuits: Can be used in switching circuits due to its high frequency capability.
  • Audio Amplifiers: Applicable in audio amplifier circuits requiring low noise and high fidelity.
  • Industrial Automation: Used in industrial automation for control and sensing applications.

Q & A

  1. What is the transistor type of the BC850CE6359HTMA1?
    The BC850CE6359HTMA1 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector current of the BC850CE6359HTMA1?
    The maximum collector current is 100 mA.
  3. What is the maximum collector-emitter breakdown voltage of the BC850CE6359HTMA1?
    The maximum collector-emitter breakdown voltage is 45 V.
  4. What is the maximum frequency of operation for the BC850CE6359HTMA1?
    The maximum frequency of operation is 250 MHz.
  5. What is the maximum power dissipation of the BC850CE6359HTMA1?
    The maximum power dissipation is 330 mW.
  6. Where can I find the datasheet for the BC850CE6359HTMA1?
    You can find the datasheet on the official Infineon Technologies website or through authorized distributors like Digi-Key and Hongda Electronics.
  7. What are some common applications of the BC850CE6359HTMA1?
    Common applications include general-purpose amplification, switching circuits, audio amplifiers, and industrial automation.
  8. Is the BC850CE6359HTMA1 suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications up to 250 MHz.
  9. What is the advantage of using the BC850CE6359HTMA1 in terms of power consumption?
    The BC850CE6359HTMA1 has low power consumption with a maximum power dissipation of 330 mW.
  10. Who manufactures the BC850CE6359HTMA1?
    The BC850CE6359HTMA1 is manufactured by Infineon Technologies.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.02
13,579

Please send RFQ , we will respond immediately.

Same Series
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
BC848 - GENERAL PURPOSE TRANSIST
BC848AE6327HTSA1
BC848AE6327HTSA1
TRANS NPN 30V 0.1A SOT23
BC848CE6433HTMA1
BC848CE6433HTMA1
TRANS NPN 30V 0.1A SOT23
BC850BWH6327XTSA1
BC850BWH6327XTSA1
TRANS NPN 45V 0.1A SOT323
BC847CWH6433XTMA1
BC847CWH6433XTMA1
TRANS NPN 45V 0.1A SOT323
BC850CE6327HTSA1
BC850CE6327HTSA1
TRANS NPN 45V 0.1A SOT-23
BC847BL3E6327XTMA1
BC847BL3E6327XTMA1
TRANS NPN 45V 0.1A TSLP-3-1
BC 847BF E6327
BC 847BF E6327
TRANS NPN 45V 0.1A TSFP-3
BC 847BT E6327
BC 847BT E6327
TRANS NPN 45V 0.1A SC75
BC 848C B6327
BC 848C B6327
TRANS NPN 30V 0.1A SOT23
BC 850BF E6327
BC 850BF E6327
TRANS NPN 45V 0.1A SOT23
BC 850C B5003
BC 850C B5003
TRANS NPN 45V 0.1A SOT23

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS 40-04 B5003
BAS 40-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC847C-B5000
BC847C-B5000
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC817K40E6359HTMA1
BC817K40E6359HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
IRFR120NTRPBF
IRFR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
IRLML9301TRPBF
IRLML9301TRPBF
Infineon Technologies
MOSFET P-CH 30V 3.6A SOT23
2N7002L6327HTSA1
2N7002L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 300MA SOT23-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR