BC850CE6359HTMA1
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Infineon Technologies BC850CE6359HTMA1

Manufacturer No:
BC850CE6359HTMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BC850 - LOW NOISE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CE6359HTMA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for a variety of applications requiring high reliability and performance. It is part of Infineon's extensive portfolio of semiconductor solutions, known for their quality and innovative technology.

Key Specifications

ParameterValue
Transistor TypeNPN
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Vce Saturation (Max) @ Ib, IcSee datasheet for specific values
Frequency (Max)250 MHz
Power Dissipation (Max)330 mW

Key Features

  • High Frequency Capability: The BC850CE6359HTMA1 operates up to 250 MHz, making it suitable for high-frequency applications.
  • Low Power Consumption: With a maximum power dissipation of 330 mW, it is energy-efficient and suitable for battery-powered devices.
  • High Reliability: Manufactured by Infineon Technologies, this transistor is known for its high reliability and durability.
  • Compact Package: Available in a compact package, it is ideal for space-constrained designs.

Applications

  • General Purpose Amplification: Suitable for general-purpose amplification in various electronic circuits.
  • Switching Circuits: Can be used in switching circuits due to its high frequency capability.
  • Audio Amplifiers: Applicable in audio amplifier circuits requiring low noise and high fidelity.
  • Industrial Automation: Used in industrial automation for control and sensing applications.

Q & A

  1. What is the transistor type of the BC850CE6359HTMA1?
    The BC850CE6359HTMA1 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector current of the BC850CE6359HTMA1?
    The maximum collector current is 100 mA.
  3. What is the maximum collector-emitter breakdown voltage of the BC850CE6359HTMA1?
    The maximum collector-emitter breakdown voltage is 45 V.
  4. What is the maximum frequency of operation for the BC850CE6359HTMA1?
    The maximum frequency of operation is 250 MHz.
  5. What is the maximum power dissipation of the BC850CE6359HTMA1?
    The maximum power dissipation is 330 mW.
  6. Where can I find the datasheet for the BC850CE6359HTMA1?
    You can find the datasheet on the official Infineon Technologies website or through authorized distributors like Digi-Key and Hongda Electronics.
  7. What are some common applications of the BC850CE6359HTMA1?
    Common applications include general-purpose amplification, switching circuits, audio amplifiers, and industrial automation.
  8. Is the BC850CE6359HTMA1 suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications up to 250 MHz.
  9. What is the advantage of using the BC850CE6359HTMA1 in terms of power consumption?
    The BC850CE6359HTMA1 has low power consumption with a maximum power dissipation of 330 mW.
  10. Who manufactures the BC850CE6359HTMA1?
    The BC850CE6359HTMA1 is manufactured by Infineon Technologies.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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