BSS123IXTMA1
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Infineon Technologies BSS123IXTMA1

Manufacturer No:
BSS123IXTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
100V N-CH SMALL SIGNAL MOSFET IN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123IXTMA1 is an OptiMOS™ N-channel enhancement mode MOSFET from Infineon Technologies, designed for industrial and consumer applications. It is packaged in a compact SOT-23-3 package, making it ideal for space-constrained designs. This MOSFET is known for its low RDS(on) of 6 Ohm at VGS = 10 V, offering high efficiency and performance in various circuits.

Key Specifications

ParameterMinTypMaxUnit
Drain-Source Breakdown Voltage (VDS)--100V
Gate Threshold Voltage (VGS(th))0.81.72V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V-1.26Ω
Static Drain-Source On-Resistance (RDS(on)) at VGS = 4.5 V-1.310Ω
On-State Drain Current (ID(on)) at VGS = 10 V, VDS = 5 V0.68--A
Input Capacitance (Ciss) at VDS = 25 V, VGS = 0 V, f = 1.0 MHz-73-pF
Thermal Resistance, Junction-to-Ambient (RJA)-350-°C/W

Key Features

  • Enhancement mode operation
  • Logic level gate drive availability
  • Low RDS(on) for high efficiency
  • Fast switching capabilities
  • Avalanche rated for robustness
  • RoHS compliant and halogen-free for environmental friendliness
  • Qualified according to JEDEC standards for industrial applications
  • Small outline packages (SOT-23-3) for space savings

Applications

  • Battery management and protection
  • Industrial drives
  • LED backlighting
  • Load switches
  • Reverse polarity protection
  • DC-DC converters

Q & A

  1. What is the package type of the BSS123IXTMA1 MOSFET? The BSS123IXTMA1 is packaged in a SOT-23-3 package.
  2. What is the typical RDS(on) of the BSS123IXTMA1 at VGS = 10 V? The typical RDS(on) is 1.2 Ω at VGS = 10 V.
  3. What are the operating and storage junction temperature ranges for the BSS123IXTMA1? The operating and storage junction temperature range is −55 to +150 °C.
  4. Is the BSS123IXTMA1 RoHS compliant and halogen-free? Yes, the BSS123IXTMA1 is RoHS compliant and halogen-free.
  5. What are some of the key applications of the BSS123IXTMA1? Key applications include battery management, industrial drives, LED backlighting, load switches, reverse polarity protection, and DC-DC converters.
  6. What is the gate threshold voltage range of the BSS123IXTMA1? The gate threshold voltage range is 0.8 to 2 V.
  7. What is the maximum drain-source breakdown voltage of the BSS123IXTMA1? The maximum drain-source breakdown voltage is 100 V.
  8. Does the BSS123IXTMA1 support fast switching? Yes, the BSS123IXTMA1 is designed for fast switching.
  9. Is the BSS123IXTMA1 qualified according to industry standards? Yes, it is qualified according to JEDEC standards for industrial applications.
  10. What are the benefits of using the BSS123IXTMA1 in terms of PCB space and cost? The BSS123IXTMA1 offers PCB-space and cost savings due to its small package size.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:0.63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23-3-U01
Package / Case:TO-236-3, SC-59, SOT-23-3
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