IRF7342TRPBF
  • Share:

Infineon Technologies IRF7342TRPBF

Manufacturer No:
IRF7342TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 55V 3.4A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7342TRPBF is a dual P-channel MOSFET produced by Infineon Technologies. This component utilizes Generation V technology, known for its ultra-low ON-resistance and fast switching performance. It is packaged in an SO-8 surface-mount device, which enhances its compatibility with existing surface mount techniques and ensures multi-vendor compatibility due to its industry-standard pinout. The MOSFET is RoHS compliant and halogen-free, making it environmentally friendly and reliable for industrial applications.

Key Specifications

Parameter Value Units
Drain-Source Voltage (VDS) -55 V
Continuous Drain Current (ID) at TC = 25°C -3.4 A
ON-Resistance (RDS(on)) at VGS = -10V 0.105 Ω
Gate Charge (Qg) 26 nC
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance (RθJA) 62.5 °C/W
Package Type SO-8
Number of Pins 8
Moisture Sensitivity Level MSL 1

Key Features

  • Ultra-low ON-resistance of 0.105 Ω at VGS = -10V, ensuring minimal power loss during operation.
  • Fast switching performance, making it suitable for high-frequency applications.
  • Dynamic dV/dt rating, enhancing its reliability in varying voltage conditions.
  • Industry-standard SO-8 package, ensuring multi-vendor compatibility and ease of manufacturing.
  • RoHS compliant and halogen-free, contributing to environmental sustainability.
  • High junction and storage temperature range of -55 to +150 °C, suitable for a wide range of industrial environments.

Applications

The IRF7342TRPBF is primarily used in industrial and power management applications. Its high current handling capability and low ON-resistance make it ideal for power switching and control in various industrial systems. It is also suitable for use in power supplies, motor control, and other high-power electronic devices.

Q & A

  1. What is the drain-source voltage rating of the IRF7342TRPBF?

    The drain-source voltage (VDS) rating is -55 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) rating at 25°C is -3.4 A.

  3. What is the ON-resistance of the IRF7342TRPBF at VGS = -10V?

    The ON-resistance (RDS(on)) at VGS = -10V is 0.105 Ω.

  4. What is the junction and storage temperature range of the IRF7342TRPBF?

    The junction and storage temperature range is -55 to +150 °C.

  5. Is the IRF7342TRPBF RoHS compliant?

    Yes, the IRF7342TRPBF is RoHS compliant and halogen-free.

  6. What is the package type of the IRF7342TRPBF?

    The package type is SO-8.

  7. What are the primary applications of the IRF7342TRPBF?

    The primary applications include industrial and power management.

  8. What is the moisture sensitivity level of the IRF7342TRPBF?

    The moisture sensitivity level is MSL 1.

  9. What is the thermal resistance (RθJA) of the IRF7342TRPBF?

    The thermal resistance (RθJA) is 62.5 °C/W.

  10. Is the IRF7342TRPBF suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching performance.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:690pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
0 Remaining View Similar

In Stock

$1.43
548

Please send RFQ , we will respond immediately.

Same Series
IRF7342PBF
IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8-SOIC

Similar Products

Part Number IRF7342TRPBF IRF7343TRPBF IRF7341TRPBF IRF7342QTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Obsolete
FET Type 2 P-Channel (Dual) N and P-Channel 2 N-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Standard Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 55V 55V 55V
Current - Continuous Drain (Id) @ 25°C 3.4A 4.7A, 3.4A 4.7A 3.4A
Rds On (Max) @ Id, Vgs 105mOhm @ 3.4A, 10V 50mOhm @ 4.7A, 10V 50mOhm @ 4.7A, 10V 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V 36nC @ 10V 36nC @ 10V 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V 740pF @ 25V 740pF @ 25V 690pF @ 25V
Power - Max 2W 2W 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO 8-SO

Related Product By Categories

PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
STS4DPF20L
STS4DPF20L
STMicroelectronics
MOSFET 2P-CH 20V 4A 8SOIC
NX3008NBKS,115
NX3008NBKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.35A 6TSSOP
NTJD1155LT1G
NTJD1155LT1G
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
FDMA3023PZ
FDMA3023PZ
onsemi
MOSFET 2P-CH 30V 2.9A 6MICROFET
BSS138AKDW-TP
BSS138AKDW-TP
Micro Commercial Co
DUAL N-CHANNEL MOSFET, SOT-363
CSD88539ND
CSD88539ND
Texas Instruments
MOSFET 2N-CH 60V 15A 8SOIC
FDMC8200
FDMC8200
onsemi
MOSFET 2N-CH 30V 8A/12A 8POWER33
NX7002BKW,115
NX7002BKW,115
Nexperia USA Inc.
0.24A, 60V, N CHANNEL MOSFET, SC
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
PMGD175XNEAX
PMGD175XNEAX
Nexperia USA Inc.
MOSFET 2 N-CH 30V 900MA SOT363
2N7002DW-13-G
2N7002DW-13-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAS21E6359HTMA1
BAS21E6359HTMA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC847CE6327HTSA1
BC847CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC857BWE6327BTSA1
BC857BWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC 817-25 B5003
BC 817-25 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I