IRF7342TRPBF
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Infineon Technologies IRF7342TRPBF

Manufacturer No:
IRF7342TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 55V 3.4A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The IRF7342TRPBF is a dual P-channel MOSFET produced by Infineon Technologies. This component utilizes Generation V technology, known for its ultra-low ON-resistance and fast switching performance. It is packaged in an SO-8 surface-mount device, which enhances its compatibility with existing surface mount techniques and ensures multi-vendor compatibility due to its industry-standard pinout. The MOSFET is RoHS compliant and halogen-free, making it environmentally friendly and reliable for industrial applications.

Key Specifications

Parameter Value Units
Drain-Source Voltage (VDS) -55 V
Continuous Drain Current (ID) at TC = 25°C -3.4 A
ON-Resistance (RDS(on)) at VGS = -10V 0.105 Ω
Gate Charge (Qg) 26 nC
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance (RθJA) 62.5 °C/W
Package Type SO-8
Number of Pins 8
Moisture Sensitivity Level MSL 1

Key Features

  • Ultra-low ON-resistance of 0.105 Ω at VGS = -10V, ensuring minimal power loss during operation.
  • Fast switching performance, making it suitable for high-frequency applications.
  • Dynamic dV/dt rating, enhancing its reliability in varying voltage conditions.
  • Industry-standard SO-8 package, ensuring multi-vendor compatibility and ease of manufacturing.
  • RoHS compliant and halogen-free, contributing to environmental sustainability.
  • High junction and storage temperature range of -55 to +150 °C, suitable for a wide range of industrial environments.

Applications

The IRF7342TRPBF is primarily used in industrial and power management applications. Its high current handling capability and low ON-resistance make it ideal for power switching and control in various industrial systems. It is also suitable for use in power supplies, motor control, and other high-power electronic devices.

Q & A

  1. What is the drain-source voltage rating of the IRF7342TRPBF?

    The drain-source voltage (VDS) rating is -55 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) rating at 25°C is -3.4 A.

  3. What is the ON-resistance of the IRF7342TRPBF at VGS = -10V?

    The ON-resistance (RDS(on)) at VGS = -10V is 0.105 Ω.

  4. What is the junction and storage temperature range of the IRF7342TRPBF?

    The junction and storage temperature range is -55 to +150 °C.

  5. Is the IRF7342TRPBF RoHS compliant?

    Yes, the IRF7342TRPBF is RoHS compliant and halogen-free.

  6. What is the package type of the IRF7342TRPBF?

    The package type is SO-8.

  7. What are the primary applications of the IRF7342TRPBF?

    The primary applications include industrial and power management.

  8. What is the moisture sensitivity level of the IRF7342TRPBF?

    The moisture sensitivity level is MSL 1.

  9. What is the thermal resistance (RθJA) of the IRF7342TRPBF?

    The thermal resistance (RθJA) is 62.5 °C/W.

  10. Is the IRF7342TRPBF suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching performance.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:690pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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In Stock

$1.43
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Same Series
IRF7342PBF
IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8-SOIC

Similar Products

Part Number IRF7342TRPBF IRF7343TRPBF IRF7341TRPBF IRF7342QTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Obsolete
FET Type 2 P-Channel (Dual) N and P-Channel 2 N-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Standard Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 55V 55V 55V
Current - Continuous Drain (Id) @ 25°C 3.4A 4.7A, 3.4A 4.7A 3.4A
Rds On (Max) @ Id, Vgs 105mOhm @ 3.4A, 10V 50mOhm @ 4.7A, 10V 50mOhm @ 4.7A, 10V 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V 36nC @ 10V 36nC @ 10V 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V 740pF @ 25V 740pF @ 25V 690pF @ 25V
Power - Max 2W 2W 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO 8-SO

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