NVMD3P03R2G
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Fairchild Semiconductor NVMD3P03R2G

Manufacturer No:
NVMD3P03R2G
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMD3P03R2G is a dual P-Channel MOSFET array produced by onsemi, formerly known as Fairchild Semiconductor. This component is designed to meet the stringent requirements of automotive and industrial applications, offering high reliability and performance. The NVMD3P03R2G is built with precision component design and features ultra-low dropout voltage regulation, making it an ideal choice for power management in various sectors.

Key Specifications

Parameter Value Unit
Manufacturer onsemi
Product Category MOSFET
Mounting Style SMD/SMT
Package / Case SOIC-8
Transistor Polarity P-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V V
Id - Continuous Drain Current 3.05 A A
Rds On - Drain-Source Resistance 85 mOhms
Vgs - Gate-Source Voltage -20 V, +20 V V
Vgs th - Gate-Source Threshold Voltage 2.5 V V
Qg - Gate Charge 25 nC nC
Minimum Operating Temperature -55°C °C
Maximum Operating Temperature +150°C °C
Pd - Power Dissipation 2 W W
Qualification AEC-Q101

Key Features

  • Precision Component Design: Ensures high reliability and performance in demanding applications.
  • Ultra Low Dropout Voltage Regulator: Provides efficient voltage regulation with minimal dropout.
  • Safe Operating Area Indicator: Helps in monitoring and maintaining safe operating conditions.
  • High Current Capability for Motor Control: Suitable for high-current applications such as motor control.
  • Automatic Shutdown in Overcurrent Condition: Enhances safety by automatically shutting down in overcurrent conditions.
  • Operating Temperature Range -55°C to 150°C: Offers a wide operating temperature range, making it versatile for various environments.

Applications

  • Automotive Power Management: Ideal for power distribution, motor control, and other key functions in vehicle electronics.
  • Robotics Motion Control: Suitable for controlling motors and managing power in robotic systems.
  • Smart Grid Applications: Used in smart grid systems for efficient power management and control.
  • IoT Device Power Management: Provides reliable power management for Internet of Things (IoT) devices.

Q & A

  1. What is the drain-source breakdown voltage of the NVMD3P03R2G?

    The drain-source breakdown voltage (Vds) is 30 V.

  2. What is the continuous drain current rating of the NVMD3P03R2G?

    The continuous drain current (Id) is 3.05 A.

  3. What is the gate-source threshold voltage of the NVMD3P03R2G?

    The gate-source threshold voltage (Vgs th) is 2.5 V.

  4. What is the operating temperature range of the NVMD3P03R2G?

    The operating temperature range is -55°C to +150°C.

  5. Is the NVMD3P03R2G qualified for automotive applications?

    Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications.

  6. What is the package type of the NVMD3P03R2G?

    The package type is SOIC-8.

  7. Does the NVMD3P03R2G have automatic shutdown in overcurrent conditions?

    Yes, it features automatic shutdown in overcurrent conditions.

  8. What are some common applications of the NVMD3P03R2G?

    Common applications include automotive power management, robotics motion control, smart grid applications, and IoT device power management.

  9. What is the power dissipation rating of the NVMD3P03R2G?

    The power dissipation (Pd) is 2 W.

  10. How many channels does the NVMD3P03R2G have?

    The NVMD3P03R2G is a dual-channel MOSFET.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.34A (Tj)
Rds On (Max) @ Id, Vgs:85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:750pF @ 24V
Power - Max:730mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NVMD3P03R2G NTMD3P03R2G
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 2.34A (Tj) 2.34A
Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V 85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 24V 750pF @ 24V
Power - Max 730mW (Ta) 730mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

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