NVMD3P03R2G
  • Share:

Fairchild Semiconductor NVMD3P03R2G

Manufacturer No:
NVMD3P03R2G
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMD3P03R2G is a dual P-Channel MOSFET array produced by onsemi, formerly known as Fairchild Semiconductor. This component is designed to meet the stringent requirements of automotive and industrial applications, offering high reliability and performance. The NVMD3P03R2G is built with precision component design and features ultra-low dropout voltage regulation, making it an ideal choice for power management in various sectors.

Key Specifications

Parameter Value Unit
Manufacturer onsemi
Product Category MOSFET
Mounting Style SMD/SMT
Package / Case SOIC-8
Transistor Polarity P-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V V
Id - Continuous Drain Current 3.05 A A
Rds On - Drain-Source Resistance 85 mOhms
Vgs - Gate-Source Voltage -20 V, +20 V V
Vgs th - Gate-Source Threshold Voltage 2.5 V V
Qg - Gate Charge 25 nC nC
Minimum Operating Temperature -55°C °C
Maximum Operating Temperature +150°C °C
Pd - Power Dissipation 2 W W
Qualification AEC-Q101

Key Features

  • Precision Component Design: Ensures high reliability and performance in demanding applications.
  • Ultra Low Dropout Voltage Regulator: Provides efficient voltage regulation with minimal dropout.
  • Safe Operating Area Indicator: Helps in monitoring and maintaining safe operating conditions.
  • High Current Capability for Motor Control: Suitable for high-current applications such as motor control.
  • Automatic Shutdown in Overcurrent Condition: Enhances safety by automatically shutting down in overcurrent conditions.
  • Operating Temperature Range -55°C to 150°C: Offers a wide operating temperature range, making it versatile for various environments.

Applications

  • Automotive Power Management: Ideal for power distribution, motor control, and other key functions in vehicle electronics.
  • Robotics Motion Control: Suitable for controlling motors and managing power in robotic systems.
  • Smart Grid Applications: Used in smart grid systems for efficient power management and control.
  • IoT Device Power Management: Provides reliable power management for Internet of Things (IoT) devices.

Q & A

  1. What is the drain-source breakdown voltage of the NVMD3P03R2G?

    The drain-source breakdown voltage (Vds) is 30 V.

  2. What is the continuous drain current rating of the NVMD3P03R2G?

    The continuous drain current (Id) is 3.05 A.

  3. What is the gate-source threshold voltage of the NVMD3P03R2G?

    The gate-source threshold voltage (Vgs th) is 2.5 V.

  4. What is the operating temperature range of the NVMD3P03R2G?

    The operating temperature range is -55°C to +150°C.

  5. Is the NVMD3P03R2G qualified for automotive applications?

    Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications.

  6. What is the package type of the NVMD3P03R2G?

    The package type is SOIC-8.

  7. Does the NVMD3P03R2G have automatic shutdown in overcurrent conditions?

    Yes, it features automatic shutdown in overcurrent conditions.

  8. What are some common applications of the NVMD3P03R2G?

    Common applications include automotive power management, robotics motion control, smart grid applications, and IoT device power management.

  9. What is the power dissipation rating of the NVMD3P03R2G?

    The power dissipation (Pd) is 2 W.

  10. How many channels does the NVMD3P03R2G have?

    The NVMD3P03R2G is a dual-channel MOSFET.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.34A (Tj)
Rds On (Max) @ Id, Vgs:85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:750pF @ 24V
Power - Max:730mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

-
153

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP

Similar Products

Part Number NVMD3P03R2G NTMD3P03R2G
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 2.34A (Tj) 2.34A
Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V 85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 24V 750pF @ 24V
Power - Max 730mW (Ta) 730mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

Related Product By Categories

2N7002KDW-AU_R1_000A1
2N7002KDW-AU_R1_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
2N7002V
2N7002V
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
CSD88539ND
CSD88539ND
Texas Instruments
MOSFET 2N-CH 60V 15A 8SOIC
BUK9K25-40EX
BUK9K25-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 18.2A 56LFPAK
BUK9K52-60E,115
BUK9K52-60E,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 16A LFPAK56D
BUK7K15-80EX
BUK7K15-80EX
Nexperia USA Inc.
MOSFET 2 N-CH 80V 23A LFPAK56D
NTLJD3115PT1G
NTLJD3115PT1G
onsemi
MOSFET 2P-CH 20V 2.3A 6-WDFN
2N7002DWK-13
2N7002DWK-13
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 10K
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
STL13DP10F6
STL13DP10F6
STMicroelectronics
MOSFET 2P-CH 100V 13A PWRFLAT56
NTLUD3A50PZTAGHW
NTLUD3A50PZTAGHW
onsemi
MOSFET 2P-CH 20V 2.8A UDFN

Related Product By Brand

BAR43C
BAR43C
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2 ELEMENT,
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
TIP32CTU
TIP32CTU
Fairchild Semiconductor
TRANS PNP 100V 3A TO220-3
NJVMJB44H11T4G
NJVMJB44H11T4G
Fairchild Semiconductor
TRANS NPN 80V 10A D2PAK
TIP102TU
TIP102TU
Fairchild Semiconductor
TRANS NPN DARL 100V 8A TO220-3
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
FQT3P20TF_SB82100
FQT3P20TF_SB82100
Fairchild Semiconductor
1-ELEMENT, P-CHANNEL POWER MOSFE
FGD3040G2_F085
FGD3040G2_F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
74LCXH162244MTX
74LCXH162244MTX
Fairchild Semiconductor
IC BUF NON-INVERT 3.6V 48TSSOP
CD4040BCM
CD4040BCM
Fairchild Semiconductor
BINARY COUNTER
UC3842ADX
UC3842ADX
Fairchild Semiconductor
SWITCHING CONTROLLER
MC7915CT
MC7915CT
Fairchild Semiconductor
IC REG LINEAR -15V 1A TO220-3