Overview
The NVMD3P03R2G is a dual P-Channel MOSFET array produced by onsemi, formerly known as Fairchild Semiconductor. This component is designed to meet the stringent requirements of automotive and industrial applications, offering high reliability and performance. The NVMD3P03R2G is built with precision component design and features ultra-low dropout voltage regulation, making it an ideal choice for power management in various sectors.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Manufacturer | onsemi | |
Product Category | MOSFET | |
Mounting Style | SMD/SMT | |
Package / Case | SOIC-8 | |
Transistor Polarity | P-Channel | |
Number of Channels | 2 Channel | |
Vds - Drain-Source Breakdown Voltage | 30 V | V |
Id - Continuous Drain Current | 3.05 A | A |
Rds On - Drain-Source Resistance | 85 mOhms | mΩ |
Vgs - Gate-Source Voltage | -20 V, +20 V | V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | V |
Qg - Gate Charge | 25 nC | nC |
Minimum Operating Temperature | -55°C | °C |
Maximum Operating Temperature | +150°C | °C |
Pd - Power Dissipation | 2 W | W |
Qualification | AEC-Q101 |
Key Features
- Precision Component Design: Ensures high reliability and performance in demanding applications.
- Ultra Low Dropout Voltage Regulator: Provides efficient voltage regulation with minimal dropout.
- Safe Operating Area Indicator: Helps in monitoring and maintaining safe operating conditions.
- High Current Capability for Motor Control: Suitable for high-current applications such as motor control.
- Automatic Shutdown in Overcurrent Condition: Enhances safety by automatically shutting down in overcurrent conditions.
- Operating Temperature Range -55°C to 150°C: Offers a wide operating temperature range, making it versatile for various environments.
Applications
- Automotive Power Management: Ideal for power distribution, motor control, and other key functions in vehicle electronics.
- Robotics Motion Control: Suitable for controlling motors and managing power in robotic systems.
- Smart Grid Applications: Used in smart grid systems for efficient power management and control.
- IoT Device Power Management: Provides reliable power management for Internet of Things (IoT) devices.
Q & A
- What is the drain-source breakdown voltage of the NVMD3P03R2G?
The drain-source breakdown voltage (Vds) is 30 V.
- What is the continuous drain current rating of the NVMD3P03R2G?
The continuous drain current (Id) is 3.05 A.
- What is the gate-source threshold voltage of the NVMD3P03R2G?
The gate-source threshold voltage (Vgs th) is 2.5 V.
- What is the operating temperature range of the NVMD3P03R2G?
The operating temperature range is -55°C to +150°C.
- Is the NVMD3P03R2G qualified for automotive applications?
Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications.
- What is the package type of the NVMD3P03R2G?
The package type is SOIC-8.
- Does the NVMD3P03R2G have automatic shutdown in overcurrent conditions?
Yes, it features automatic shutdown in overcurrent conditions.
- What are some common applications of the NVMD3P03R2G?
Common applications include automotive power management, robotics motion control, smart grid applications, and IoT device power management.
- What is the power dissipation rating of the NVMD3P03R2G?
The power dissipation (Pd) is 2 W.
- How many channels does the NVMD3P03R2G have?
The NVMD3P03R2G is a dual-channel MOSFET.