Overview
The MJD45H11TM is a PNP epitaxial silicon transistor manufactured by Fairchild Semiconductor, now part of onsemi. This transistor is designed for general-purpose amplifier and power switching applications. It is housed in the TO-252-3 (DPAK) package, making it suitable for surface mount technology (SMT) assembly. The device is known for its high collector current and voltage ratings, making it ideal for various power and driver stages in electronic circuits.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -100 | V |
| Collector-Emitter Voltage | VCEO | -80 | V |
| Emitter-Base Voltage | VEBO | -7 | V |
| Continuous Collector Current | IC | -8 | A |
| Peak Pulse Collector Current | ICM | -16 | A |
| Power Dissipation | PD | 2.7 | W |
| Thermal Resistance, Junction to Ambient Air | RθJA | 46 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
| DC Current Gain (HFE) @ IC, VCE | HFE | 40 @ 4A, 1V | |
| Frequency - Transition | fT | 40 MHz | |
| VCE Saturation @ IB, IC | VCE(sat) | 1V @ 400mA, 8A | |
| Lead Free Status / RoHS Status | Lead Free / RoHS Compliant |
Key Features
- High Collector Current: Continuous collector current of -8A and peak pulse collector current of -16A.
- High Voltage Ratings: Collector-base voltage of -100V and collector-emitter voltage of -80V.
- Power Switching and Amplification: Ideal for power switching or amplification applications.
- Complementary NPN Type: Complementary NPN type is MJD44H11.
- Lead-Free and RoHS Compliant: Lead-free finish and RoHS compliant, making it environmentally friendly.
- Halogen and Antimony Free: Classified as a “Green” device, free from halogen and antimony.
- Surface Mount Package: Housed in the TO-252-3 (DPAK) package for surface mount applications.
Applications
- Power Switching: Suitable for power switching applications due to its high current and voltage ratings.
- Amplifier Stages: Ideal for output or driver stages in amplifier circuits.
- Automotive Applications: An automotive-compliant version (MJD45H11Q) is available under a separate datasheet.
- General-Purpose Amplifiers: Used in various general-purpose amplifier applications requiring high current and voltage handling.
Q & A
- What is the maximum collector current of the MJD45H11TM transistor?
The maximum continuous collector current is -8A, and the peak pulse collector current is -16A.
- What is the collector-emitter breakdown voltage of the MJD45H11TM?
The collector-emitter breakdown voltage (VCEO) is -80V.
- Is the MJD45H11TM RoHS compliant?
Yes, the MJD45H11TM is lead-free and RoHS compliant.
- What is the package type of the MJD45H11TM?
The transistor is housed in the TO-252-3 (DPAK) package.
- What is the operating temperature range of the MJD45H11TM?
The operating and storage temperature range is -55°C to +150°C.
- What is the DC current gain (HFE) of the MJD45H11TM?
The DC current gain (HFE) is 40 at 4A and 1V.
- Is there a complementary NPN type for the MJD45H11TM?
Yes, the complementary NPN type is the MJD44H11).
- What is the power dissipation of the MJD45H11TM?
The power dissipation (PD) is 2.7W under specified conditions).
- Is the MJD45H11TM suitable for automotive applications?
An automotive-compliant version (MJD45H11Q) is available under a separate datasheet).
- What is the thermal resistance, junction to ambient air, of the MJD45H11TM?
The thermal resistance, junction to ambient air (RθJA), is 46°C/W under specified conditions).
