BC327-40ZL1G
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onsemi BC327-40ZL1G

Manufacturer No:
BC327-40ZL1G
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS PNP 45V 0.8A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC327-40ZL1G is a PNP Bipolar Junction Transistor (BJT) produced by onsemi. This transistor is part of the BC327 series, known for its versatility and reliability in various electronic applications. The BC327-40ZL1G is housed in a compact TO-92 package, making it suitable for space-efficient circuit designs. It is widely used in both amplification and switching roles due to its high current gain and low power dissipation characteristics.

Key Specifications

Parameter Value
Transistor Type PNP
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Base-Emitter On Voltage -1.2 V
Vce Saturation (Max) @ Ib, Ic 700 mV @ 50 mA, 500 mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100 mA, 1 V
Power - Max 625 mW
Frequency - Transition 260 MHz
Operating Temperature -55°C ~ 150°C (TJ)

Key Features

  • PNP Bipolar Junction Transistor: The BC327 is a PNP-type transistor, making it suitable for scenarios requiring PNP transistors.
  • Low Current Operation: Designed for efficient operation with low current inputs, ideal for applications with restricted current availability.
  • Low Voltage Ratings: Equipped with low voltage ratings, aligning with circuits that necessitate low-voltage operation.
  • High Current Gain (hfe): Exhibits high current gain, ensuring effective signal amplification and maintaining signal fidelity.
  • Low Power Dissipation: Marked by low power dissipation, minimizing energy loss and contributing to overall efficiency.
  • Amplification and Switching Applications: Versatile in its applications, commonly used in both amplification and switching roles.
  • Compact Form Factor: Encased in a compact TO-92 package, facilitating the design of space-efficient circuits.
  • Reliability: Renowned for its reliability, ensuring steadfast and consistent performance over time.
  • Fast Switching Speed: Boasts an impressive fast-switching speed, crucial in dynamic electronic environments.
  • Full-Voltage Operation: Excels in full-voltage operation, accommodating a wide and stable voltage range.
  • High Power and Current Handling Capability: Remarkable power and current handling capability, suitable for applications with substantial power and current loads.

Applications

The BC327-40ZL1G transistor is versatile and can be used in a variety of electronic applications. It is particularly useful for driving high-power loads such as relays, other transistors, LEDs, ICs, and more. With a maximum collector-emitter voltage of 45 V and a collector current of 800 mA, it effectively manages load voltages below 45 V. It is also suitable for audio amplification and various signal amplification scenarios due to its high current gain and low power dissipation.

Additionally, the BC327 can serve as the output for microcontrollers, powering loads up to 800 mA, making it effective for driving motors, modules, sensors, and similar components.

Q & A

  1. What is the BC327-40ZL1G transistor type?

    The BC327-40ZL1G is a PNP Bipolar Junction Transistor (BJT).

  2. What is the maximum collector current of the BC327-40ZL1G?

    The maximum collector current is 800 mA.

  3. What is the maximum collector-emitter voltage of the BC327-40ZL1G?

    The maximum collector-emitter voltage is 45 V.

  4. What is the base-emitter on voltage of the BC327-40ZL1G?

    The base-emitter on voltage is -1.2 V.

  5. What is the DC current gain (hFE) of the BC327-40ZL1G?

    The DC current gain (hFE) is a minimum of 100 at 100 mA and 1 V.

  6. What is the maximum power dissipation of the BC327-40ZL1G?

    The maximum power dissipation is 625 mW.

  7. What is the transition frequency of the BC327-40ZL1G?

    The transition frequency is 260 MHz.

  8. What is the operating temperature range of the BC327-40ZL1G?

    The operating temperature range is -55°C to 150°C (TJ).

  9. In what types of applications is the BC327-40ZL1G commonly used?

    The BC327-40ZL1G is commonly used in amplification and switching applications, including driving high-power loads and signal amplification scenarios.

  10. Why is the BC327-40ZL1G preferred for space-efficient designs?

    The BC327-40ZL1G is preferred for space-efficient designs due to its compact TO-92 package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:1.5 W
Frequency - Transition:260MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:TO-92 (TO-226)
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Same Series
BC327G
BC327G
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BC327RL1G
BC327RL1G
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BC327-25RL1G
BC327-25RL1G
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BC327-25ZL1G
BC327-25ZL1G
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Similar Products

Part Number BC327-40ZL1G BC337-40ZL1G BC327-40ZL1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
Transistor Type PNP NPN -
Current - Collector (Ic) (Max) 800 mA 800 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V -
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 100nA 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V -
Power - Max 1.5 W 625 mW -
Frequency - Transition 260MHz 210MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads) -
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) -

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