Overview
The FDG6332C-PG is a dual N & P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is optimized for applications requiring high power dissipation in a compact footprint, making it an ideal choice where larger, more expensive packages like TSSOP-8 and SSOP-6 are impractical.
This MOSFET array is housed in a small SC70-6 (SOT-363) package, which is 51% smaller than the SSOT-6 package and has a low profile of 1mm thickness. This compact design makes it suitable for a wide range of general usage applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | VGS = 0 V, ID = 0.5 A | - | - | 20 | V |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | VGS = 0 V, ID = -0.5 A | - | - | 20 | V |
| On-State Drain Current (N-Channel) | ID(on) | VGS = 4.5 V, VDS = 5 V | 1 | - | - | A |
| On-State Drain Current (P-Channel) | ID(on) | VGS = -4.5 V, VDS = -5 V | -2 | - | - | A |
| On-State Resistance (N-Channel) | RDS(ON) | VGS = 4.5 V | - | 300 | - | mΩ |
| On-State Resistance (N-Channel) | RDS(ON) | VGS = 2.5 V | - | 400 | - | mΩ |
| On-State Resistance (P-Channel) | RDS(ON) | VGS = -4.5 V | - | 420 | - | mΩ |
| On-State Resistance (P-Channel) | RDS(ON) | VGS = -2.5 V | - | 630 | - | mΩ |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 415 | °C/W |
Key Features
- Advanced PowerTrench Process: Minimizes on-state resistance and maintains superior switching performance.
- Compact Package: SC70-6 (SOT-363) package, 51% smaller than SSOT-6 and 1mm thick.
- Low On-State Resistance: RDS(ON) = 300 mΩ @ VGS = 4.5 V for N-Channel, RDS(ON) = 420 mΩ @ VGS = -4.5 V for P-Channel.
- High Performance Trench Technology: Ensures extremely low RDS(ON) values.
- Low Gate Charge: Enhances switching efficiency.
Applications
The FDG6332C-PG is suitable for a wide range of applications where compact, high-performance MOSFETs are required. These include:
- Portable Electronics: Due to its small footprint and low profile, it is ideal for mobile devices, tablets, and other portable electronics.
- Automotive Systems: Can be used in various automotive applications requiring high power dissipation in a small space.
- Industrial Control Systems: Suitable for use in industrial control circuits where space is limited.
- Power Management Systems: Can be used in power management circuits requiring efficient switching and low on-state resistance.
Q & A
- What is the FDG6332C-PG MOSFET?
The FDG6332C-PG is a dual N & P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process.
- What are the key features of the FDG6332C-PG?
Key features include low on-state resistance, high performance trench technology, low gate charge, and a compact SC70-6 package.
- What is the on-state resistance of the N-Channel MOSFET at VGS = 4.5 V?
The on-state resistance (RDS(ON)) of the N-Channel MOSFET at VGS = 4.5 V is 300 mΩ.
- What is the on-state resistance of the P-Channel MOSFET at VGS = -4.5 V?
The on-state resistance (RDS(ON)) of the P-Channel MOSFET at VGS = -4.5 V is 420 mΩ.
- What is the thermal resistance, junction-to-ambient (RJA) of the FDG6332C-PG?
The thermal resistance, junction-to-ambient (RJA) is 415 °C/W.
- In what package is the FDG6332C-PG available?
The FDG6332C-PG is available in the SC70-6 (SOT-363) package.
- What are some typical applications for the FDG6332C-PG?
Typical applications include portable electronics, automotive systems, industrial control systems, and power management systems.
- How does the PowerTrench process benefit the FDG6332C-PG?
The PowerTrench process minimizes on-state resistance and maintains superior switching performance.
- What is the maximum drain-source breakdown voltage for both channels?
The maximum drain-source breakdown voltage (BVDSS) for both N and P channels is 20 V.
- Is the FDG6332C-PG RoHS compliant?
Yes, the FDG6332C-PG is RoHS compliant.
