Overview
The FDC8602 is a dual N-Channel MOSFET produced by ON Semiconductor. This device is fabricated using an advanced Power Trench® process, which enhances its performance in terms of on-resistance (rDS(on)), switching capabilities, and ruggedness. The FDC8602 is packaged in a SuperSOT-6 package, making it suitable for a variety of applications where compact size and high performance are required.
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current (ID) | 1.2 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source On-Resistance (rDS(on)) | 285 mΩ |
| Package Type | SuperSOT-6 |
Key Features
- Advanced Power Trench® process for improved rDS(on) and switching performance
- High drain to source breakdown voltage of 100 V
- Low on-resistance of 285 mΩ
- Compact SuperSOT-6 package for space-saving designs
- Rugged construction for enhanced reliability
Applications
The FDC8602 is suitable for various applications including but not limited to:
- Power management in consumer electronics
- Automotive systems requiring high reliability and compact design
- Industrial control systems
- Switching power supplies and DC-DC converters
Q & A
- What is the continuous drain current of the FDC8602?
The continuous drain current of the FDC8602 is 1.2 A. - What is the drain to source breakdown voltage of the FDC8602?
The drain to source breakdown voltage of the FDC8602 is 100 V. - What is the on-resistance (rDS(on)) of the FDC8602?
The on-resistance (rDS(on)) of the FDC8602 is 285 mΩ. - In what package is the FDC8602 available?
The FDC8602 is available in a SuperSOT-6 package. - What process is used to fabricate the FDC8602?
The FDC8602 is fabricated using an advanced Power Trench® process. - What are some typical applications of the FDC8602?
The FDC8602 is used in power management in consumer electronics, automotive systems, industrial control systems, and switching power supplies. - Why is the FDC8602 considered rugged?
The FDC8602 is considered rugged due to its enhanced construction and the use of the Power Trench® process. - What is the benefit of the low on-resistance in the FDC8602?
The low on-resistance of 285 mΩ in the FDC8602 reduces power losses and improves overall efficiency in switching applications. - Can the FDC8602 be used in high-temperature environments?
Yes, the FDC8602 is designed to operate reliably in a range of temperatures, making it suitable for various environmental conditions. - Where can I find detailed technical specifications for the FDC8602?
Detailed technical specifications for the FDC8602 can be found in the datasheet available on the ON Semiconductor website or through distributors like Mouser Electronics.
