NTGD4167CT1G
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onsemi NTGD4167CT1G

Manufacturer No:
NTGD4167CT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGD4167CT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This component is part of a complementary pair, offering both N-channel and P-channel MOSFETs in a single package. The TSOP6 package makes it suitable for space-constrained designs while providing excellent thermal performance. The NTGD4167CT1G is lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)2.9 A (N-Channel), 2.2 A (P-Channel)
RDS(ON) (On-Resistance)Typically 70 mΩ (N-Channel), 100 mΩ (P-Channel)
VGS(th) (Threshold Voltage)Typically 1.5 V (N-Channel), -1.5 V (P-Channel)
PackageTSOP6
Operating Temperature-55°C to 150°C

Key Features

  • Complementary N-channel and P-channel MOSFETs in a single TSOP6 package.
  • Low on-resistance (RDS(ON)) for efficient power handling.
  • High continuous drain current (ID) for robust performance.
  • Lead-free and RoHS compliant for environmental sustainability.
  • Wide operating temperature range (-55°C to 150°C) for diverse applications.

Applications

The NTGD4167CT1G is suitable for a variety of applications, including but not limited to:

  • Power management in consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial control systems and motor drives.
  • Battery management systems and power supplies.

Q & A

  1. What is the package type of the NTGD4167CT1G?
    The NTGD4167CT1G comes in a TSOP6 package.
  2. What are the continuous drain currents for the N-channel and P-channel MOSFETs?
    The continuous drain current is 2.9 A for the N-channel and 2.2 A for the P-channel.
  3. What is the maximum drain-source voltage (VDS) for this MOSFET?
    The maximum drain-source voltage is 30 V.
  4. Is the NTGD4167CT1G lead-free and RoHS compliant?
    Yes, the NTGD4167CT1G is lead-free and RoHS compliant.
  5. What is the typical on-resistance (RDS(ON)) for the N-channel and P-channel MOSFETs?
    The typical on-resistance is 70 mΩ for the N-channel and 100 mΩ for the P-channel.
  6. What is the operating temperature range for the NTGD4167CT1G?
    The operating temperature range is -55°C to 150°C.
  7. What are some common applications for the NTGD4167CT1G?
    Common applications include power management in consumer electronics, automotive systems, industrial control systems, and battery management systems.
  8. Where can I find detailed specifications for the NTGD4167CT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. How many MOSFETs are included in the NTGD4167CT1G package?
    The NTGD4167CT1G includes a complementary pair of N-channel and P-channel MOSFETs in a single package.
  10. What is the significance of the TSOP6 package?
    The TSOP6 package is compact and suitable for space-constrained designs while providing good thermal performance.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.6A, 1.9A
Rds On (Max) @ Id, Vgs:90mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:295pF @ 15V
Power - Max:900mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
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