2N7002DW-7-F-79
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Diodes Incorporated 2N7002DW-7-F-79

Manufacturer No:
2N7002DW-7-F-79
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DW-7-F-79, produced by Diodes Incorporated, is a dual N-channel enhancement mode MOSFET designed for high-efficiency power management applications. This device is characterized by its low on-state resistance, low gate threshold voltage, and fast switching speed, making it ideal for various electronic systems requiring efficient power handling.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA
Gate Threshold Voltage VGS(TH) 1.0 2.0 V VDS = VGS, ID = 250µA
On-State Drain-Source On-Resistance RDS(ON) 3.2 7.5 Ω VGS = 5.0V, ID = 0.05A
Continuous Drain Current ID 115 mA TA = +25°C
Input Capacitance Ciss 22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Thermal Resistance, Junction to Ambient RθJA 415 °C/W Device mounted on FR-4 PCB
Operating and Storage Temperature Range TJ, TSTG -55 150 °C

Key Features

  • Dual N-channel MOSFET
  • Low on-state resistance (RDS(ON))
  • Low gate threshold voltage (VGS(TH))
  • Low input capacitance (Ciss)
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package (6-TSSOP, SC-88, SOT-363)
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, “Green” device

Applications

  • Motor control
  • Power management functions
  • High-efficiency power management applications
  • Automotive applications (with specific change control and qualifications)

Q & A

  1. What is the maximum drain-source breakdown voltage of the 2N7002DW-7-F-79?

    The maximum drain-source breakdown voltage (BVDSS) is 60V to 70V.

  2. What is the typical on-state drain-source on-resistance (RDS(ON)) of this MOSFET?

    The typical on-state drain-source on-resistance (RDS(ON)) is 3.2Ω to 7.5Ω at VGS = 5.0V and ID = 0.05A.

  3. What is the continuous drain current rating at 25°C?

    The continuous drain current rating at 25°C is 115mA.

  4. What is the input capacitance (Ciss) of the 2N7002DW-7-F-79?

    The input capacitance (Ciss) is typically 22pF to 50pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

  5. What is the thermal resistance, junction to ambient (RθJA), for this device?

    The thermal resistance, junction to ambient (RθJA), is approximately 415°C/W when the device is mounted on an FR-4 PCB.

  6. What is the operating and storage temperature range for the 2N7002DW-7-F-79?

    The operating and storage temperature range is -55°C to +150°C.

  7. Is the 2N7002DW-7-F-79 RoHS compliant?

    Yes, the 2N7002DW-7-F-79 is totally lead-free and fully RoHS compliant.

  8. What are the typical applications of the 2N7002DW-7-F-79?

    Typical applications include motor control, power management functions, and high-efficiency power management applications.

  9. What package types are available for the 2N7002DW-7-F-79?

    The device is available in 6-TSSOP, SC-88, and SOT-363 packages.

  10. Is the 2N7002DW-7-F-79 suitable for automotive applications?

    Yes, it is suitable for automotive applications, but specific automotive-grade parts (Q-suffix) should be referred to for certain qualifications.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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