Overview
The 2N7002DW-7-F-79, produced by Diodes Incorporated, is a dual N-channel enhancement mode MOSFET designed for high-efficiency power management applications. This device is characterized by its low on-state resistance, low gate threshold voltage, and fast switching speed, making it ideal for various electronic systems requiring efficient power handling.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
---|---|---|---|---|---|---|
Drain-Source Breakdown Voltage | BVDSS | 60 | 70 | V | VGS = 0V, ID = 10µA | |
Gate Threshold Voltage | VGS(TH) | 1.0 | 2.0 | V | VDS = VGS, ID = 250µA | |
On-State Drain-Source On-Resistance | RDS(ON) | 3.2 | 7.5 | Ω | VGS = 5.0V, ID = 0.05A | |
Continuous Drain Current | ID | 115 | mA | TA = +25°C | ||
Input Capacitance | Ciss | 22 | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | |
Thermal Resistance, Junction to Ambient | RθJA | 415 | °C/W | Device mounted on FR-4 PCB | ||
Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C |
Key Features
- Dual N-channel MOSFET
- Low on-state resistance (RDS(ON))
- Low gate threshold voltage (VGS(TH))
- Low input capacitance (Ciss)
- Fast switching speed
- Low input/output leakage
- Ultra-small surface mount package (6-TSSOP, SC-88, SOT-363)
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free, “Green” device
Applications
- Motor control
- Power management functions
- High-efficiency power management applications
- Automotive applications (with specific change control and qualifications)
Q & A
- What is the maximum drain-source breakdown voltage of the 2N7002DW-7-F-79?
The maximum drain-source breakdown voltage (BVDSS) is 60V to 70V.
- What is the typical on-state drain-source on-resistance (RDS(ON)) of this MOSFET?
The typical on-state drain-source on-resistance (RDS(ON)) is 3.2Ω to 7.5Ω at VGS = 5.0V and ID = 0.05A.
- What is the continuous drain current rating at 25°C?
The continuous drain current rating at 25°C is 115mA.
- What is the input capacitance (Ciss) of the 2N7002DW-7-F-79?
The input capacitance (Ciss) is typically 22pF to 50pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.
- What is the thermal resistance, junction to ambient (RθJA), for this device?
The thermal resistance, junction to ambient (RθJA), is approximately 415°C/W when the device is mounted on an FR-4 PCB.
- What is the operating and storage temperature range for the 2N7002DW-7-F-79?
The operating and storage temperature range is -55°C to +150°C.
- Is the 2N7002DW-7-F-79 RoHS compliant?
Yes, the 2N7002DW-7-F-79 is totally lead-free and fully RoHS compliant.
- What are the typical applications of the 2N7002DW-7-F-79?
Typical applications include motor control, power management functions, and high-efficiency power management applications.
- What package types are available for the 2N7002DW-7-F-79?
The device is available in 6-TSSOP, SC-88, and SOT-363 packages.
- Is the 2N7002DW-7-F-79 suitable for automotive applications?
Yes, it is suitable for automotive applications, but specific automotive-grade parts (Q-suffix) should be referred to for certain qualifications.