BC857BFZ-7B
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Diodes Incorporated BC857BFZ-7B

Manufacturer No:
BC857BFZ-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BFZ-7B is a high-performance PNP small signal transistor manufactured by Diodes Incorporated. This transistor is designed to offer high collector current and low power dissipation, making it suitable for a variety of applications in electronic circuits. The BC857BFZ-7B is part of the X2-DFN0606 package family, which is 40% smaller than the DFN1006 package, minimizing off-board profile and enhancing design flexibility.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Base VoltageVCBO-50V
Collector-Emitter VoltageVCEO-45V
Emitter-Base VoltageVEBO-6.0V
Continuous Collector CurrentIC-100mA
Peak Pulse Collector CurrentICM-200mA
Power DissipationPD925mW
Thermal Resistance, Junction to AmbientRθJA465°C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150°C
Package TypeX2-DFN0606-3
Package Height0.4 mm

Key Features

  • High collector current (IC = -100 mA)
  • Low power dissipation (PD = 925 mW)
  • Small package footprint (X2-DFN0606-3), 40% smaller than DFN1006
  • Low profile package height (0.4 mm)
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, “Green” device
  • Complementary NPN type BC847BFZ available
  • High current gain-bandwidth product (fT = 100 MHz)

Applications

The BC857BFZ-7B transistor is suitable for various applications including general-purpose switching, amplification, and signal processing in electronic circuits. Its high collector current and low power dissipation make it ideal for use in automotive, industrial, and consumer electronics. Additionally, its small package size and low profile make it a good choice for space-constrained designs.

Q & A

  1. What is the collector-emitter voltage rating of the BC857BFZ-7B transistor?
    The collector-emitter voltage rating is -45 V.
  2. What is the continuous collector current of the BC857BFZ-7B transistor?
    The continuous collector current is -100 mA.
  3. What is the power dissipation of the BC857BFZ-7B transistor?
    The power dissipation is 925 mW.
  4. What is the package type of the BC857BFZ-7B transistor?
    The package type is X2-DFN0606-3.
  5. Is the BC857BFZ-7B transistor RoHS compliant?
    Yes, the BC857BFZ-7B transistor is totally lead-free and fully RoHS compliant.
  6. What is the operating temperature range of the BC857BFZ-7B transistor?
    The operating and storage temperature range is -55 to +150 °C.
  7. Does the BC857BFZ-7B have a complementary NPN type?
    Yes, the complementary NPN type is BC847BFZ.
  8. What is the current gain-bandwidth product of the BC857BFZ-7B transistor?
    The current gain-bandwidth product (fT) is 100 MHz.
  9. What are the typical applications of the BC857BFZ-7B transistor?
    The BC857BFZ-7B is used in general-purpose switching, amplification, and signal processing in automotive, industrial, and consumer electronics.
  10. What are the benefits of the small package size of the BC857BFZ-7B transistor?
    The small package size (X2-DFN0606-3) and low profile (0.4 mm) make it ideal for space-constrained designs.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:435 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:X2-DFN0606-3
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Similar Products

Part Number BC857BFZ-7B BC857BFA-7B
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 435 mW 435 mW
Frequency - Transition 100MHz 340MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-XFDFN 3-XFDFN
Supplier Device Package X2-DFN0606-3 X2-DFN0806-3

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