Overview
The KSA1220AYS is a PNP epitaxial silicon transistor produced by onsemi. This transistor is designed for general-purpose and low VCE(sat) applications. It is particularly suited for audio frequency power amplifiers and high frequency power amplifiers. The KSA1220AYS is also a complement to the KSC2690/KSC2690A transistors, making it versatile for various electronic circuits. Although the product is currently marked as obsolete, it remains relevant for reference and legacy system maintenance.
Key Specifications
Parameter | Symbol | Units | Min. | Typ. | Max. |
---|---|---|---|---|---|
Collector-Base Voltage | VCBO | V | - | - | 120 / 160 |
Collector-Emitter Voltage | VCEO | V | - | - | 120 / 160 |
Emitter-Base Voltage | VEBO | V | - | - | 5 |
Collector Current (DC) | IC | A | - | - | 1.2 |
Collector Current (Pulse) | ICP | A | - | - | 2.5 |
Base Current | IB | A | - | - | 0.3 |
Collector Dissipation (Ta=25°C) | PC | W | - | - | 1.2 |
Junction Temperature | TJ | °C | - | - | 150 |
Storage Temperature | TSTG | °C | -55 | - | 150 |
DC Current Gain | hFE | - | 35 / 140 | 60 / 320 | - |
Collector-Emitter Saturation Voltage | VCE(sat) | V | - | - | 0.4 / 0.7 |
Base-Emitter Saturation Voltage | VBE(sat) | V | - | - | 1 / 1.3 |
Current Gain Bandwidth Product | fT | MHz | - | - | 175 |
Key Features
- General Purpose and Low VCE(sat): Suitable for a wide range of applications, including audio and high frequency power amplifiers.
- High Current Capability: Supports up to 1.2 A of continuous collector current and 2.5 A of pulse collector current.
- High Voltage Handling: Can handle collector-base and collector-emitter voltages up to 160 V.
- Low Saturation Voltages: Features low VCE(sat) and VBE(sat) for efficient operation.
- Complementary Transistor: Complement to KSC2690/KSC2690A transistors, making it versatile for various circuit designs.
- High Frequency Performance: With a current gain bandwidth product of 175 MHz, it is suitable for high frequency applications.
Applications
- Audio Frequency Power Amplifiers: Ideal for amplifying audio signals in various audio equipment.
- High Frequency Power Amplifiers: Suitable for high frequency applications such as RF amplifiers and switching circuits.
- General Electronic Circuits: Can be used in a variety of general-purpose electronic circuits requiring a PNP transistor.
- Legacy System Maintenance: Although obsolete, it remains relevant for maintaining and repairing older systems that use this transistor.
Q & A
- What is the KSA1220AYS transistor used for?
The KSA1220AYS is used in audio frequency power amplifiers, high frequency power amplifiers, and other general-purpose electronic circuits.
- What are the maximum collector and emitter voltages for the KSA1220AYS?
The maximum collector-base voltage (VCBO) and collector-emitter voltage (VCEO) are both 160 V.
- What is the continuous collector current rating of the KSA1220AYS?
The continuous collector current (IC) rating is 1.2 A.
- What is the pulse collector current rating of the KSA1220AYS?
The pulse collector current (ICP) rating is 2.5 A.
- What is the junction temperature limit for the KSA1220AYS?
The junction temperature (TJ) limit is 150°C.
- Is the KSA1220AYS still in production?
No, the KSA1220AYS is currently marked as obsolete.
- What is the current gain bandwidth product of the KSA1220AYS?
The current gain bandwidth product (fT) is 175 MHz.
- What are the saturation voltages for the KSA1220AYS?
The collector-emitter saturation voltage (VCE(sat)) is between 0.4 V and 0.7 V, and the base-emitter saturation voltage (VBE(sat)) is between 1 V and 1.3 V.
- What package type does the KSA1220AYS come in?
The KSA1220AYS comes in a TO-126 package.
- What are the storage temperature limits for the KSA1220AYS?
The storage temperature (TSTG) limits are between -55°C and 150°C.