Overview
The KSA1220AYSTSTU is a PNP epitaxial silicon transistor manufactured by onsemi (formerly Fairchild Semiconductor). This transistor is designed for high-frequency and audio frequency power amplifier applications. It is part of the KSA1220 and KSA1220A series, known for their robust performance and reliability.
Key Specifications
| Parameter | Symbol | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | V | - | - | 120 (KSA1220), 160 (KSA1220A) |
| Collector-Emitter Voltage | VCEO | V | - | - | 120 (KSA1220), 160 (KSA1220A) |
| Emitter-Base Voltage | VEBO | V | - | - | 5 |
| Collector Current (DC) | IC | A | - | - | 1.2 |
| Collector Current (Pulse) | ICP | A | - | - | 2.5 |
| Base Current | IB | A | - | - | 0.3 |
| Collector Dissipation (Ta=25°C) | PC | W | - | - | 1.2 |
| Junction Temperature | TJ | °C | - | - | 150 |
| Storage Temperature | TSTG | °C | -55 | - | 150 |
| DC Current Gain (hFE) | hFE2 | - | 60 (KSA1220), 100 (KSA1220A) | 150 (KSA1220), 200 (KSA1220A) | 320 (KSA1220A) |
| Collector-Emitter Saturation Voltage | VCE(sat) | V | - | - | 0.4 - 0.7 |
| Base-Emitter Saturation Voltage | VBE(sat) | V | - | - | 1 - 1.3 |
| Current Gain Bandwidth Product | fT | MHz | - | - | 175 |
Key Features
- High Current Handling: The KSA1220AYSTSTU can handle a collector current of up to 1.2 A (DC) and 2.5 A (pulse), making it suitable for power amplifier applications.
- High Voltage Ratings: It has collector-base and collector-emitter voltage ratings of up to 160 V, ensuring robust performance under various operating conditions.
- Low Saturation Voltages: The transistor features low collector-emitter and base-emitter saturation voltages, which help in minimizing power losses.
- High Current Gain: The DC current gain (hFE) ranges from 60 to 320, depending on the specific model, which is beneficial for amplification purposes.
- High Frequency Capability: With a current gain bandwidth product of 175 MHz, this transistor is suitable for high-frequency applications.
Applications
- Audio Frequency Power Amplifiers: The KSA1220AYSTSTU is ideal for audio amplifiers due to its high current handling and low distortion characteristics.
- High Frequency Power Amplifiers: Its high frequency capability makes it suitable for RF and other high-frequency power amplifier applications.
- General Purpose Amplification: It can be used in various general-purpose amplification circuits where high current and voltage handling are required.
Q & A
- Q: What is the maximum collector current for the KSA1220AYSTSTU?
A: The maximum collector current (DC) is 1.2 A, and the maximum collector current (pulse) is 2.5 A.
- Q: What are the collector-base and collector-emitter voltage ratings?
A: The collector-base voltage (VCBO) and collector-emitter voltage (VCEO) ratings are up to 160 V for the KSA1220A model.
- Q: What is the junction temperature range for this transistor?
A: The junction temperature (TJ) range is up to 150°C.
- Q: What is the current gain bandwidth product of the KSA1220AYSTSTU?
A: The current gain bandwidth product (fT) is 175 MHz.
- Q: Is the KSA1220AYSTSTU suitable for high-frequency applications?
A: Yes, it is suitable for high-frequency applications due to its high current gain bandwidth product.
- Q: What is the storage temperature range for this transistor?
A: The storage temperature (TSTG) range is from -55°C to 150°C.
- Q: Can the KSA1220AYSTSTU be used in life support devices or systems?
A: No, it is not authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
- Q: What package type does the KSA1220AYSTSTU come in?
A: It comes in a TO-126 package.
- Q: Is the KSA1220AYSTSTU still in production?
A: The KSA1220 series is scheduled for obsolescence and will be discontinued by the manufacturer.
- Q: What are the typical applications for the KSA1220AYSTSTU?
A: It is typically used in audio frequency power amplifiers, high frequency power amplifiers, and general-purpose amplification circuits.
