Overview
The MJD42CT4G is a PNP complementary power transistor manufactured by onsemi. It is designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the MJD42C series, which is electrically similar to the popular TIP42 series. The MJD42CT4G is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications.
Key Specifications
| Parameter | Symbol | Max Unit |
|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 Vdc |
| Collector-Base Voltage | VCB | 100 Vdc |
| Emitter-Base Voltage | VEB | 5 Vdc |
| Collector Current - Continuous | IC | 6 Adc |
| Collector Current - Peak | ICM | 10 Adc |
| Base Current | IB | 2 Adc |
| Total Power Dissipation @ TC = 25°C | PD | 20 W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.5 Vdc |
| Gain Bandwidth Product | fT | 3 MHz |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Straight lead version in plastic sleeves (designated by '1' suffix).
- Electrically similar to popular TIP41 and TIP42 series.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
Applications
The MJD42CT4G is suitable for a variety of applications, including general-purpose amplifiers and low-speed switching circuits. It is particularly useful in automotive and industrial environments due to its robust specifications and compliance with automotive standards.
Q & A
- What is the maximum collector-emitter voltage of the MJD42CT4G?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the package type of the MJD42CT4G?
The MJD42CT4G is packaged in a DPAK (TO-252) case.
- What is the continuous collector current rating of the MJD42CT4G?
The continuous collector current (IC) is rated at 6 Adc.
- Is the MJD42CT4G RoHS compliant?
- What is the gain bandwidth product (fT) of the MJD42CT4G?
The gain bandwidth product (fT) is 3 MHz.
- What are the operating and storage junction temperature ranges for the MJD42CT4G?
The operating and storage junction temperature range is −65 to +150 °C.
- Is the MJD42CT4G suitable for automotive applications?
- What is the collector-emitter saturation voltage (VCE(sat)) of the MJD42CT4G?
The collector-emitter saturation voltage (VCE(sat)) is 1.5 Vdc.
- What is the total power dissipation rating of the MJD42CT4G at TC = 25°C?
The total power dissipation (PD) at TC = 25°C is 20 W.
- Is the epoxy of the MJD42CT4G UL 94 V-0 compliant?
